United States

In this work, we apply multilayer etching mask and optimize the etch process to improve etching rate and etching selectivity to pattern sapphire antireflection nanostructures. Initial results show 2-D sapphire nanostructures with 530 nm width and 470 nm height, resulting in two-fold aspect ratio enhancement over previous work.

EIPBN 2021

Plasma Etching of High Aspect ratio Sapphire Antireflection Nanostructures Using Multilayer Etching Mask

sapphire

nanostructures

antireflection

The Electronic Materials Conference (EMC) is the premier annual forum on the preparation, characterization and use of electronic materials. This year’s event will feature a plenary session, topical sessions, a poster session and more.

EMC is coordinated with the Device Research Conference (DRC), which will be held during the same week, from June 20-23. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchange of information between attendees of both Conferences.

![](https://assets.underline.io/uploads/markdown_image/1/image/eb26c24a18d5d1030616afa4f993cf89.png)
	
<a href="https://www.mrs.org/docs/default-source/meetings-events/mrs-conference-services/2021/emc-2021/2021-emc-program-at-a-glance-6-16-21.pdf?sfvrsn=e39f950c_4">Latest Program-at-a-Glance</a>

<a href="https://drive.google.com/file/d/1eiS1ao4p83VNy8xgHs3Rls7gTQjx7Rc4/view?usp=sharing">Full Program with Abstracts</a>

EMC 2021

poster

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

To register for this event, please follow the link below.

Massively-parallel electron-beam systems are developed to improve the writing throughput.  Two different methods to further decrease the writing time are investigated, i.e., reducing the maximum dose difference in a feature and utilizing empty cycles (with no beam on) in the conventional writing methods.

Reduction of Exposing Time in Massively-Parallel E-beam Systems

A modular, UHV sealed FEG operational betwee 30-100 keV has been developed. This design lends itself to integration onto thermionically operated TEMs, EBL into FEG operation or in R & D applications. Graphitic carbon and gold particles have been resolved confirming a resolution of better than 0.24nm at 60-100 keV.

A modular 100 keV vacuum sealed FEG

In this contribution, the generation of multiple electron-beam from an InGaN photocathode was demonstrated. 25 electron beams were observed by irradiating 25 lasers. The averaged diameter was 0.6 mm with a gaussian distribution. The deviation in diameter was 17%.

Multiple Electron-Beam Generation from InGaN Photocathode

For direct writing laser lithography, GenISys BEAMER and LAB software allows for correcting proximity effects and to achieve fast approximation of a desired shape without tedious iterations. We show the importance of parameters such as vertical focus variation on staircase structures and lens-like shapes using a Heidelberg Instruments DWL 66+.

Bend the curve: the benefit of optical proximity correction in direct writing lithography simulation and experiment

After irradiating the electron beam, we measured the surface potential with an electrostatic force microscope (EFM).
In the presentation, we will explain the measurement results using the model we devised.

Investigation of Non-Charging Exposure Conditions for Insulating Resist Films in Electron Beam Lithography

We investigate the surface wetting properties for a range of micro/nanofabricated topography on aluminium surfaces supported by ion-beam processing to enhance liquid-solid interaction.

Surface Wetting on Micro-milled or Laser-Etched Aluminium with Ion-Beam Post-Processing

This work presents the analysis of spike, burst, and network burst activity in a microfluidic brain-on-chip. A collection of activities in the electrophysiological recordings, measured by multielectrode arrays, provided strong clues for the maintenance of human induced pluripotent stem cells-derived cortical neuron cultures in 3D for 37 days.

Detection of network burst activity in a MEMS-based 3D neuronal cell culture system

This work explored an accessible and cost-effective way to prepare high quality 2D Bi and derivatives on SiO2/Si substrates by e-beam evaporation. The electrical and thermoelectric properties were characterized. Our study builds a platform to realize high-quality 2D Bi, which may also be suitable in other Xenes.

Tuning Electrical Properties of E-beam Evaporated 2D Bi and Derivatives

In this study, we investigated whether UV-cured resin thin films modified by atomic layer deposition (ALD) could be removed completely by dry etching procedures. UV-nanoimprinted deposition masks were removed completely by sequential physical and chemical dry etching procedures, to demonstrate and area selective deposition of aluminum oxide.

Nanoimprinted Deposition Masks for Area Selective Atomic Layer Deposition of Aluminum Oxide

Long silver rods SERS layer was constructed by using fine grit (1µm) sandpaper as a template for imprinting nano-patterns. Therefore, costly nano lithographic processing was avoided. Raman spectra of R6G were obtained. The signal strength decreased linearly at reduced concentrations in logarithmic scale, as expected for SERS, down to 1nM.

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Plasma Etching of High Aspect ratio Sapphire Antireflection Nanostructures Using Multilayer Etching Mask

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