United States

Our group used cellphone CMOS camera module, based on OV5648-BSI image sensor, to image 200keV electron beam in Transmission Electron Microscope and 30keV ion beam in Helium Ion Microscope.

EIPBN 2021

Cellphone CMOS Camera Module for Imaging with Charged Particle Beams.

electron beam

helium ion beam

cmos image sensors

The 15th Joint MMM-INTERMAG Conference (2022 Joint) is sponsored jointly by AIP Publishing and the IEEE Magnetics Society. Members of the international scientific and engineering communities interested in recent developments in fundamental and applied magnetism are invited to attend and contribute to the technical sessions. The technical program will include invited and contributed papers in oral and poster sessions, invited symposia, a plenary session, and an evening session, with about 1500 presentations overall. This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

The 2022 Joint Conference will offer both in-person and prerecorded on-demand content.

For tickets to the event, please register at the following link: https://magnetism.org/register

Please register for the Joint MMM-Intermag conference to join the event.

2022 Joint MMM-INTERMAG

This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

poster

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

To register for this event, please follow the link below.

We introduce a UV greyscale lithography process combining large surface patterning with a high vertical resolution. To reach a low contrast curve slope, we studied the annealing processes Soft Bake and Post Exposure Bake. We also achieve a 50nm Si steps within our presented plasma etching process.

Optimized UV grayscale process for high vertical resolution applied to spectral imagers

We  optimized the built-in lens mask (BILM) which was shown to be able to form a three-dimensional image in a single exposure by using its multiple focus function, in order to creat the ideal target shape.

Optimization of the Built-in Lens Mask for Three-Dimensional Photo Lithography

The goal of this work is to build compartmentalized microelectrode arrays to assess the impact of conditioned cell culture media exchange between two initially isolated neuronal networks. The fabrication of biocompatible dual-chamber microelectrode arrays is presented, including the manufacturing and attachment of resin rings with controllable openings for fluid exchange.

A dual-chamber microelectrode array to facilitate neuronal network communication

Width/depth and shape of volume of resist modified by ion beam as function of ion energy, exposure time and ion mass (He, Ne, Ar, Ga, Kr, Xe и Rn) is investigated by Monte-Carlo simulation. Sub-10nm resolution is found and confirmed. Analytical interpolating expressions for arbitrary ion mass, energy are submitted

 Ion beam lithography: resist modification volume determination and sub-10nm resolution prediction via simulation

In spite of M-C simulation shows strong dependence proximity function on depth (3D-PF)  it is possible to find effective α, β, η parameters for two-dimensional PF using original algorithm which considers development. Good agreement with experimental data is demonstrated thus proximity parameters now can be calculated for arbitrary layered material

PRESENTATION OF PROXIMITY FUNCTION BY THREE PARAMETERS , , BASED ON MONTE CARLO METHOD AND COMPARISON WITH EXPERIMENT

PMMA exposure sensitivity to both electrons and gallium ions at identical conditions was measured. It was found that a positive sensitivity to gallium ions is 1000 times higher than to electrons, all at the same conditions. Original procedure allowed to measure ion contrast (~3) for highly nonuniform in depth exposure

 Ion beam lithography: sensitivity/contrast in IBL vs EBL.

It is often thought that cleaving can only be applied to crystalline materials such as silicon and GaAs and that it is an inherently dirty and imprecise process. Dicing by cleaving can be applied to a wide variety of wafer substrates including silicon, sapphire, GaAs, GaN, InP, SiC,  and glass.

Wafer dicing by cleaving: A fast, clean, dry and accurate

Zyvex Labs has been working to convert a Scanning Tunnelling Microscope into an Atomic-Precision Lithography Tool. We describe the various advances in STM hardware and control systems that go into making this leap.

From STM to Lithography Tool

High fidelity 2D and 3D micro and nanometer structures are facilitated by a number of fabrication methods which employ numerous concepts of lithographic patterning. In our contribution we seek to review our material innovations for scientific work where emerging nanofabrication is employed as well advanced production with industrial relevance.

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Cellphone CMOS Camera Module for Imaging with Charged Particle Beams.

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