United States

After irradiating the electron beam, we measured the surface potential with an electrostatic force microscope (EFM).
In the presentation, we will explain the measurement results using the model we devised.

EIPBN 2021

Investigation of Non-Charging Exposure Conditions for Insulating Resist Films in Electron Beam Lithography

electron beam 'fogging electron 'electrostatic force microscope

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

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poster

Here we demonstrate a new type of magnetically responsive nanostructure consisting of a polydimethylsiloxane (PDMS) nanopillar array with deposited nickel caps, that has successfully achieved such decoupling with multiple cap-geometry designs for a better actuation control.

Magnetically Responsive Polymer Nanopillars with Nickel Cap

we have proposed a hybrid machine learning system that presents the optimum materials and process conditions for direct nanoimprint.　The system applied for optimization of Glycol concentration to PVA for low temperature process and the results agree with experiments.

Process and material design using hybrid machine learning for direct thermal nanoimprint

New resists are required to advance the nanoelectronics industry to keep up the demands of Moore’s law. A new class of high dry etch selectively electron beam resist materials have been developed that are based on a family of heterometallic rings.

Improving the Sensitivity of Metallic Organic Resists

Maskless Grayscale lithography is a key technology to create structured surfaces in photoresist, especially for micro-optic applications. Processes of low-contrast positive resist are well known and used for thicknesses up to 60 µm. The possibility to fabricate higher structures, i.e. 80 µm, 100 µm high and beyond, are of great interest in the micro-optic world. With some double- and triple-coated layers of an experimental resist, we could make structures 83µm and 100µm tall. The triple- coated layer showed some limitations that we plan to overcome to go beyond 100µm.

Improvements on Maskless Grayscale Lithography in thick positive photoresist

In this work, we present a systematic investigation of plasma etching of Cr2O3 films via an inductively coupled plasma-reactive ion etching system in nanoscale. The effects of plasma composition, rf-chuck power and ICP source power on the etch rates, sidewall profile, surface roughness, selectivity and dc-bias have been systematically investigated.

Patterning of Chromium Oxide (Cr2O3) as a Hard Mask by Plasma Etching

We characterize in-situ the impact of aberration-corrected electron-beam lithography (AC-EBL) on the performance of suspended graphene field-effect transistors. When AC-EBL is performed on the vicinity of a graphene channel, detrimental effects can be removed by vigorous annealing, while the damage caused by AC-EBL performed directly on a channel is irreversible.

In-situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

Massively-parallel electron-beam systems are developed to improve the writing throughput.  Two different methods to further decrease the writing time are investigated, i.e., reducing the maximum dose difference in a feature and utilizing empty cycles (with no beam on) in the conventional writing methods.

Reduction of Exposing Time in Massively-Parallel E-beam Systems

A modular, UHV sealed FEG operational betwee 30-100 keV has been developed. This design lends itself to integration onto thermionically operated TEMs, EBL into FEG operation or in R & D applications. Graphitic carbon and gold particles have been resolved confirming a resolution of better than 0.24nm at 60-100 keV.

A modular 100 keV vacuum sealed FEG

In this contribution, the generation of multiple electron-beam from an InGaN photocathode was demonstrated. 25 electron beams were observed by irradiating 25 lasers. The averaged diameter was 0.6 mm with a gaussian distribution. The deviation in diameter was 17%.

Multiple Electron-Beam Generation from InGaN Photocathode

For direct writing laser lithography, GenISys BEAMER and LAB software allows for correcting proximity effects and to achieve fast approximation of a desired shape without tedious iterations. We show the importance of parameters such as vertical focus variation on staircase structures and lens-like shapes using a Heidelberg Instruments DWL 66+.

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