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VIDEO DOI: https://doi.org/10.48448/3wwc-zk27
PAPER DOI: 10.1109/IRPS48228.2024.10529389

poster

IRPS 2024 Main Conference

•

April 17, 2024

•

Dallas, United States

Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC Under the Constant Current Stress

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Next from IRPS 2024 Main Conference

Measurement of the Dit changes under BTI-stress in 4H-SiC FETs using the subthreshold slope method
poster

Measurement of the Dit changes under BTI-stress in 4H-SiC FETs using the subthreshold slope method

IRPS 2024 Main Conference

+3Daniel J. Lichtenwalner
Philipp Steinmann and 5 other authors

17 April 2024

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