This study investigates hole-induced threshold voltage instability at high positive and negative gate stress in 4H-SiC power MOSFETs. Our study addresses the phenomenon of VT decrease by hole trapping that occurs during positive or negative high voltage gate screening, and the subsequent restoration of VT by applying a counterbalancing phenomenon such as electron-hole recombination or hole de-trapping to increase VT at positive gate bias. Therefore, threshold stability should be considered when applying gate screens.