VIDEO DOI: https://doi.org/10.48448/ns57-4m18

technical paper

DRC 2022

May 27, 2022

United States

Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure

Please log in to leave a comment

Downloads

PaperTranscript English (automatic)

Next from DRC 2022

Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor
technical paper

Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor

DRC 2022

+2
Dahan Mor M. and 4 other authors

27 May 2022

Similar lecture

Vertically Stacked Multilayer Atomic-Layer-Deposited Sub-1-Nanometer In2O3 Field-Effect Transistors with BEOL Compatibility
technical paper

Vertically Stacked Multilayer Atomic-Layer-Deposited Sub-1-Nanometer In2O3 Field-Effect Transistors with BEOL Compatibility

DRC 2022

+6Zhuocheng Zhang
Zhuocheng Zhang and 8 other authors

27 May 2022

Stay up to date with the latest Underline news!

Select topic of interest (you can select more than one)

PRESENTATIONS

  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved