United States

IEEE WiPDA 2021

Packaging/Modules Part 1

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


This event requires a registration to attend, please register [here](https://web.cvent.com/event/536cea3d-4c0d-4d50-8939-529979d80785/summary) to purchase a ticket. 

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

tutorial

A low conduction resistance 1200 V/ 4 mΩ SiC power module is fabricated and characterized for its thermal performance. The design and fabrication of the power module is presented. The parasitic resistance distribution from the module prototype is measured and shows that it is critical to minimize the source bond wire and contact resistance for such low on-state resistance module. The steady-state thermal tests are performed, and the temperature distribution of the fabricated module is measured and validated. A FEA model of the SiC module is built and validated by the steady-state thermal tests. Then the transient thermal performance or surge current capacity is studied. It shows that at least 4 bond wires are required for each SiC die such that the module package will not limit the surge current capacity of SiC chips.

Development and Thermal Characterization of a Low Resistance SiC Module

A double-side cooled 10 kV, 25 A SiC MOSFET package is proposed which utilizes a wirebond-less molybdenum interconnect to alleviate thermomechanical stress and improve reliability. An effective junction-to-case thermal resistance of 0.17 ºC/W is achieved, enabling the package to dissipate a heat flux at the MOSFET surface in excess of 200 W/cm^2 with less than 30ºC temperature rise from the device junction to the package exterior. Thermal and thermomechanical finite element simulations were carried out to select materials and manufacturing processes that ensure manageable thermomechanical stress levels are maintained during fabrication and operation. Simulations were verified with experimental results and the package successfully demonstrated 150ºC continuous operation without degradation.

Thermal and Thermomechanical Analysis of a 10 kV SiC MOSFET Package with Double-Sided Cooling

This presentation reports the experimental results of the fabricated 4H-SiC Lateral Junction Field Effect Transistor (LJFET) and cell-to-cell integrated Lateral Bi-directional JFET (LBiDJFET). It was found that the reverse conduction characteristics of SiC LJFET were better than the forward conduction characteristics in terms of on-state resistance. The conduction mechanism of LBiDJFET can be described by the series connection of the forward and reverse conduction of LJFETs. This intriguing behavior of the cell-to-cell integration approach is promising because it can greatly reduce the wafer area consumed while achieving the bi-directional functions.

Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)

GaNFast™ power ICs, use next-generation gallium nitride (GaN) to replace legacy silicon chips to enable up to 3x faster charging and 3x more power in half the size and weight for mobile fast chargers, consumer electronics, solar, data centers and EVs, replacing silicon in a market worth over $13B by 2026. Now, a next-generation enables even higher efficiency, autonomy and reliability with precision sensing of system current, voltage and temperature and real-time control and protection. External monitoring components – such as large, lossy sense resistors – are eliminated, reducing system power loss, reducing complexity and reducing cost. This new GaNFast generation is a core element as we “Electrify Our World™” and accelerate the conversion away from fossil fuel sources and loads. As well as enabling efficiency improvements that reduce the carbon emissions of target applications, small die-size, fewer manufacturing process steps and integrated functionality mean that GaNFast power ICs have up to 10x lower CO2 footprint than silicon-based solutions, and save 4 kg CO2 per IC shipped, vs. equivalent legacy silicon chips.

Advances in GaN Power ICs: Efficiency, Reliability & Autonomy

SiC semiconductor technology has enjoyed rapid market adoption in the last few years. SiC MOSFETs have been adopted in a variety of markets such as solar inverters, industrial power supplies, and EV onboard and off-board chargers. But the rapid adoption of SiC for the drive train inverters in Battery Electric Vehicles is changing the market landscape for SiC. It is being adopted in these inverters because it offers a 5-10% improvement in efficiency, which results in either extended range for the vehicle for a given battery charge, or a reduction in the battery pack required to go a certain distance. A large number of automotive OEMs now have SiC targeted for incorporation into their EV drives. SiC power device manufacturing is based now on 150 mm substrates, allowing cost reduction over recent years. As the market grows further, the push to 200 mm substrates is inevitable, and Cree | Wolfspeed’s new wafer fab will be the first to start production on 200 mm.

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Next from IEEE WiPDA 2021

Development and Thermal Characterization of a Low Resistance SiC Module

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Smart Gate Driver ICs for GaN Power Transistors

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