France

InP DHBT technologies are well established for high data rates at the III-V Lab in France and as a foundry at Teledyne in US. FBH has developed over the past years three InP DHBT technologies for high performance communications and sensing applications, with particular view on signal generation and amplification, as well as signal conversion. This presentation will provide details on the achieved results in the three InP DHBT technologies at FBH. The most prominent technology is the transferred substrate (TS) InP DHBT technology at FBH, where the host InP substrate is removed and the MMIC is realized on an eligible substrate of choice. With this technology, FBH has achieved 530 GHz cut-off frequency with a breakdown voltage of &gt; 4 V. Using the TS InP DHBT process FBH has developed an InP-on-BiCMOS process, which is unique worldwide and which combines the advantages of high complexity of SiGe BiCMOS circuits with the performance capabilities of InP technology. Signal generation with integrated PLL synthesis has been demonstrated with this technology up to 300 GHz. Also highly compact front-end circuits for radar applications have been published. More recently, FBH has developed a robust triple-mesa MMIC process based on InP DHBT devices with cut-off frequencies beyond 300 GHz. The advantages and challenges of all three process will be discussed and evaluated during the talk

ESSCIRC ESSDERC Educational Events

InP DHBT technologies at FBH

high-frequency

hbts

[![](https://assets.underline.io/uploads/markdown_image/1/image/985c8a40b04e56675221c8549975de3c.png)](https://drive.google.com/file/d/1B70nPIeeeqdG4UU70NlYXuKVOHLRuJEo/view?usp=sharing)

### ** History of DRC**
The Device Research Conference (DRC) began in the pre-transistor era with the 1942 establishment of the Conference on Electron Device Research (CEDR). Following William Shockley’s 1948 CEDR presentation of the transistor device, the Solid-State Device Research Conference (SSDRC) was established, with invitation-only attendance.

In the ensuing decades, many exciting firsts were presented at SSDRC, including the use of impurity diffusion in silicon and germanium, the first practical MOSFET, and the first lattice-matched heterojunction.

In 1969, under the leadership or Herbert Kroemer and Cal Quate, the CEDR and SSDRC merged into DRC. In 1970, attendance was opened to all, and the first DRAM (dynamic random-access memory), room temperature lasers, and first CCD (charge-coupled device) were reported—all in the same 1970 DRC meeting!

1976 saw the first official coordination of tandem meetings between DRC and the Electronic Materials Conference (EMC) to bring together the electronic materials and device communities—a custom which persists to this day. In 1991, DRC began publishing its digest with IEEE; they can all be found [here on IEEE Xplore](https://ieeexplore.ieee.org/xpl/conhome/1000199/all-proceedings). Throughout this period, DRC featured reports of many novel and record-setting devices, including the HEMT (High Electron Mobility Transistor), VCSEL (Vertical Cavity Surface Emitting Laser), HBT (Heterojunction Bipolar Transistor), and nanoscale MOSFETs.

In recent years, DRC has continued to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an [article in the Journal of the Electron Device Society](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486). DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

Today, as we look forward to the next 75+ years of device innovation, DRC continues to lead the way in showcasing top-caliber research, facilitating vibrant discussion and debate and acting as a platform to nurture the next generation of device engineers. We welcome you to join us at the next DRC!

To learn more about DRC's history, please see [Aaron Franklin, Debdeep Jena and Deji Akinwande, "75 Years of the Device Research Conference—A History Worth Repeating," in IEEE Journal of the Electron Devices Society, vol. 6, pp. 116-120, 2018. doi: 10.1109/JEDS.2017.2780778](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486).

### **Topics**
* Biological Devices
* Devices for Extreme Conditions
* Heterogeneously Integrated Devices
* Memory Devices
* Modeling and Simulation of Devices
* Nanoscale and Vacuum Devices
* Optoelectronic and Optical Devices
* Other Emerging Devices
* Power Devices
* Quantum Devices
* RF and Terahertz Devices
* Spintronic and Magnetic Devices
* Thin-film Devices
* Wide-bandgap Devices
 
### **Invited Speakers**
* Patrick Fay, University of Notre Dame
* Susanne Hoffmann-Eifert, Peter Grünberg Institute
* Sanghyeon Kim, Korea Advanced Institute of Science and Technology
* Sriram Krishnamoorthy, University of California, Santa Barbara
* Mario Lanza, King Abdullah University of Science and Technology
* Xiuling Li, The University of Texas at Austin
* Marko Radosavljevic, Intel Corporation
* Siddharth Rajan, The Ohio State University
* Giordano Scappucci, Delft University of Technology
* Fisher Yu, University of Arkansas
* Wenjuan Zhu, University of Illinois at Urbana-Champaign




Registration is required to attend this event. If you have not already done so, please use the link below to register for a ticket to the conference:

https://www.mrs.org/drc-2022/registration

Registration Is Required

DRC 2022

DRC continues to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an article in the Journal of the Electron Device Society. 
DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

InP DHBT technologies are well established for high data rates at the III-V Lab in France and as a foundry at Teledyne in US. FBH has developed over the past years three InP DHBT technologies for high performance communications and sensing applications, with particular view on signal generation and amplification, as well as signal conversion. This presentation will provide details on the achieved results in the three InP DHBT technologies at FBH. The most prominent technology is the transferred substrate (TS) InP DHBT technology at FBH, where the host InP substrate is removed and the MMIC is realized on an eligible substrate of choice. With this technology, FBH has achieved 530 GHz cut-off frequency with a breakdown voltage of > 4 V. Using the TS InP DHBT process FBH has developed an InP-on-BiCMOS process, which is unique worldwide and which combines the advantages of high complexity of SiGe BiCMOS circuits with the performance capabilities of InP technology. Signal generation with integrated PLL synthesis has been demonstrated with this technology up to 300 GHz. Also highly compact front-end circuits for radar applications have been published. More recently, FBH has developed a robust triple-mesa MMIC process based on InP DHBT devices with cut-off frequencies beyond 300 GHz. The advantages and challenges of all three process will be discussed and evaluated during the talk

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Please register for the ESSCIRC/ESSDERC Educational Events to join the event.

The Educational Events of ESSCIRC ESSDERC 2021. 

Recent work has shown that architectural isolation can be violated through software side channel attacks that exploit microarchitectural performance optimizations such as speculation to leak secrets. While turning off microarchitectural optimizations can preclude some classes of attacks, we argue that performance and security do not have be in conflict, provided processors are designed with security in mind.

We advocate designing processors to support enclaves, which are processes with an associated security policy, and espouse a principled hardware/software co-design approach to eliminating entire attack surfaces relevant to the security policy through microarchitectural isolation, rather than plugging attack-specific privacy leaks. As a case study of this approach, we describe both in-order and speculative processor designs that offer strong provable isolation of software modules running concurrently and sharing resources, even when large parts of the operating system are compromised. Open-source implementations of these processors will allow security properties to be independently verified. Finally, we describe the current limitations of this approach and future opportunities for research.

Towards Secure High-Performance Computer Architectures

The threats of side-channel attacks are getting non-trivial because they can be done by relatively low-cost equipment in a non-destructive manner. In the last few decades, a variety of side-channel attacks have been reported. Even today, the attack capability are evolving with new techniques such as machine learning. This talk will start with an overview of researches on side-channel attacks, and then introduce the-state-of-the-art side-channel attacks and countermeasures including a novel circuit-level countermeasure that makes it possible to prevent advanced side-channel attacks.

Secure Cryptographic Circuit Design against Side-Channel Attacks

And overview of what security means for ST products, the resulting embedded-security R&D themes, key considerations when doing hardware-security-design for high-volume quality manufacturing, and a short overview of other important emerging embedded security challenges.

Embedded security: A silicon provider's perpective

In this talk, we present state-of-the-art attack and defense methodologies that are based upon machine learning and hardware systems. In particular, we present three works, (i) ProFlip, (ii) HASHTAG and (iii) GenUnluck. (i) ProFlip is the first targeted Data Poisoning/Model Trojan attack framework that can divert the prediction of the DNN to the target class by progressively identifying and flipping a small set of bits in the model parameters. (ii) HASHTAG is the first framework that enables high-accuracy detection of fault-injection attacks on Deep Neural Networks (DNNs) with provable bounds on detection performance. (iii) GenUnluck is the first efficient framework, based upon Genetic Algorithms and AI, that has been shown to break several contemporary logic locking algorithms.

Attacks and Defenses rooted in Machine Learning and Hardware Systems

Side-Channel-Attack Tolerant Crypto Engines

This tutorial presentation overviews power side-channel leakages and attacks on integrated circuit chips featuring cryptographic cores. The knowledge are linked among on-board electromagetic measurements, on-chip voltage monitoring, and full-system level power noise simulation techniques for the in-depth understanding of power side-channel leakage problems.

Side-channel Leakages, Attacks and Simulation for Hardware Security

Some Insights in Automated Netlist Reverse Engineering

System-on-Chip platforms have been increasingly extended with trusted computing functionality to provide strong protection for sensitive software applications through enclaves that only require trust in the hardware and minimal software components. However, the deployed enclave architectures are still suffering from various shortcomings such as the lack of secure I/O, or being vulnerable to side-channel attacks. Thus, recent research works propose new enclave architectures with more comprehensive threat models and advanced security features. A majority of these solutions is being developed on the open RISC-V architecture. In this paper, we present a brief overview of the RISC-V-based enclave architectures, discuss their features, limitations and open challenges.

In Hardware We Trust? From TPM to Enclave Computing on RISC-V

Electro Magnetic (EM) attacks: passive side-channel and active fault attacks

InP DHBTs are well known for their capability to provide both high cutoff frequencies together with high breakdown voltage. III-V Lab has developed for several years very high-speed and high swing integrated circuits based on this technology. In this presentation, we will focus on the technological features of present 0.7-μm InP/GaInAs DHBT exhibiting around 400-GHz fT and fMAX, as well as a breakdown voltage above 4.5 V and a high dissipated power above 35 mW at peak fT. The relaxed emitter width enables to work at moderate current densities and ensure a very high fabrication yield and performance homogeneity on 3’’ wafer. More compact 0.5-µm DHBT and circuit oriented device generation allowing above 500 GHz fmax is also presented. We will demonstrate that our technology is also compatible with the fabrication of GaAsSb-based InP DHBT and a comparison of the key figures of merits between Type-I and Type-II InP DHBTs fabricated in a same process will be presented.

InP DHBT technologies at FBH

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Towards Secure High-Performance Computer Architectures

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InP DHBT technologies at FBH

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Next from ESSCIRC ESSDERC Educational Events

Towards Secure High-Performance Computer Architectures

Similar lecture

Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure

Stay up to date with the latest Underline news!

PRESENTATIONS

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COMPANY

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Downloads