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VIDEO DOI: https://doi.org/10.48448/rzes-x396

technical paper

EIPBN 2021

June 02, 2021

United States

Comparison of alignment markers and method for electron-beam lithography on CMOS dies

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Ultrahigh Aspect Ratio Silicon Nanoporous Microstructures Coated Using ALD with Nucleation Enhancement for Energy Storage and Other Applications
technical paper

Ultrahigh Aspect Ratio Silicon Nanoporous Microstructures Coated Using ALD with Nucleation Enhancement for Energy Storage and Other Applications

EIPBN 2021

+1Kenan LiDonald Gardner
Donald Gardner and 3 other authors

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