United States

CMOS back-end-of-line integration is a very promising technology for the next generations of integrated circuits. Yet, electron beam lithography and alignment on multiple underlying metal layers and structures is challenging. In this paper, we present an image correlation strategy, procedure and markers to reach alignment accuracy better than 5 nm.

EIPBN 2021

Comparison of alignment markers and method for electron-beam lithography on CMOS dies

alignement

cmos integration

ebeam lithography

ICPR 2020 is the premier international conference on Pattern Recognition, gathering leading researchers from around the world to present their latest achievements in Pattern Analysis and Recognition, applied Artificial Intelligence and Machine Learning. The topic of the year is " Putting Artificial intelligence to work on Patterns". 
For the first time, ICPR has employed a two-round review process similar to journal submissions, with new papers allowed to be submitted in either the first or second round and papers submitted in the first round and not accepted allowed to be revised and re-submitted for second round review. 

In this edition of the **ICPR 2020** Conference, there are 1407 Oral/Poster presentations organized in five Tracks: 
- Artificial Intelligence, Machine Learning for Pattern Analysis; 
- Biometrics, Human Analysis and Behavior Understanding; Computer Vision, Robotics and Intelligent Systems; 
- Document and Media Analysis; and 
- Image and Signal Processing. 

The **ICPR 2020** Main Conference program also includes 7 Keynotes from prominent world-renowned scientists, 8 Tutorials, 28 Demos, 8 Challenges, 2 Panels, as well as an Industry/Sponsor Exhibition. In addition, 41 Workshops on a range of important current and emerging research topics complete the ICPR 2020 program. 


ICPR 2020

technical paper

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

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Ultrahigh aspect-ratio structures are important for x-ray optics, energy storage, and sensors. Atomic layer deposition with nucleation and growth enhancement was developed to coat nanoporous silicon microstructures with aspect ratios up to 500:1, an order of magnitude higher than before. Devices prepared with these structures provide integrated on-chip energy storage.

Ultrahigh Aspect Ratio Silicon Nanoporous Microstructures Coated Using ALD with Nucleation Enhancement for Energy Storage and Other Applications

Virtual metrology refers to methods that employ manufacturing process related data and relevant sensor readings to predict properties of the product. The initial results examining the end-point detection of a single RIE step indicate that the approach is viable and performs better compared with traditional feature identification by user experience.

VM Modeling of Reactive Ion Etching Based on Statistics-Based and Dynamics-Inspired Spectral Features

Top-down image analysis of hexagonal hole arrays created in silicon using block-copolymer nanolithography was used to evaluate differences in dry etch rate between n-type, p-type, and intrinsic silicon.  By analyzing the hole areas and extracting the average radius and porosity, sub-nm differences in chemical etch rate could be extracted.

Using block-copolymer nanolithography as a tool to sensitively evaluate variation in chemical dry etching rates of semiconductor materials with sub-5 nm resolution

This study focuses on understanding the fundamental limitations of PMMA exposure to EUV that leads to LER and printing failures. We study the photon-PMMA interactions in EUV using dissolution rate as an indicator of exposure induced change in molecular weights. Consequently, we calculated number of reactions per photon absorbed.

Understanding the fundamental limitations of PMMA resist for EUV exposures based on dissolution rate variations through EUV dose

We use focused ion beams to create specific defects on suspended 2D materials (graphene, MoS2, WSe2). We study the extent to which the defects act as nucleation sites for Au, and tune deposition conditions and surface cleanliness to facilitate self-assembly of specific nanoisland shapes.

Focused Ion Beam Patterning for Defect-Mediated Nucleation on 2D van der Waals Materials

A short overview of the mathematical and computational methods used in LER metrology,
with special emphasis on noise effects and machine learning methods as well as a mathematical modelling approach of generating synthesized SEM images in an effort to demonstrate the pixelization effects on LER measurement

Computational Nanometrology in Line Edge Roughness Measurements: Noise and Pixelization Effects

A two-dimensional array of transmissive microshutters is designed in which light throughput can be digitally modulated at each pixel. This function is important for certain instruments, such as the near infrared spectrometer to be carried on the James Webb Space Telescope, microscopes, telephoto lenses, or digital light processors.

Transmissive Microshutter Arrays

As the thickness of the vibrating structures is reduced, the built-in strain of the structural materials plays an increased role in determining the mechanical performance of the devices. Here we demonstrate the realization of ultrathin doubly clamped nanomechanical resonators with an axial strain in the scale of 10^8.

Approaching the stress-free limit in ultrathin doubly-clamped nanomechanical resonator

Current networks of neurons show a biology, which represents functions similar to those reported for fetal human brain. Human brain modelling on chip can shine light on in vivo-like message passing from neuron to neuron in a dish.

Moonshot: Nanofabricating neural networks

Here, we will show the application of Cryo-FIBID to other precursors beyond W(CO)6, with the aim of obtaining ultrafast growth of metallic deposits, and eventually additional functional properties. In particular, we will discuss the results obtained using the (CH3)3Pt(CpCH3) precursor, which is commonly found in commercial FIB equipment.

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Comparison of alignment markers and method for electron-beam lithography on CMOS dies

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Ultrahigh Aspect Ratio Silicon Nanoporous Microstructures Coated Using ALD with Nucleation Enhancement for Energy Storage and Other Applications

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