United States

We have developed PHIDL, an open-source GDSII-based CAD tool for Python. PHIDL allows intuitive-but-powerful generation of geometries and has a large library of premade geometry functions ready for use, including basic shapes, text, lithographic test structures, boolean operations, placement and automatic packing algorithms, superconducting nanowires, and photonic routing.

EIPBN 2021

HIDL: Intuitive GDS layout and CAD geometry creation for Python

gds python cad

[![](https://assets.underline.io/uploads/markdown_image/1/image/985c8a40b04e56675221c8549975de3c.png)](https://drive.google.com/file/d/1B70nPIeeeqdG4UU70NlYXuKVOHLRuJEo/view?usp=sharing)

### ** History of DRC**
The Device Research Conference (DRC) began in the pre-transistor era with the 1942 establishment of the Conference on Electron Device Research (CEDR). Following William Shockley’s 1948 CEDR presentation of the transistor device, the Solid-State Device Research Conference (SSDRC) was established, with invitation-only attendance.

In the ensuing decades, many exciting firsts were presented at SSDRC, including the use of impurity diffusion in silicon and germanium, the first practical MOSFET, and the first lattice-matched heterojunction.

In 1969, under the leadership or Herbert Kroemer and Cal Quate, the CEDR and SSDRC merged into DRC. In 1970, attendance was opened to all, and the first DRAM (dynamic random-access memory), room temperature lasers, and first CCD (charge-coupled device) were reported—all in the same 1970 DRC meeting!

1976 saw the first official coordination of tandem meetings between DRC and the Electronic Materials Conference (EMC) to bring together the electronic materials and device communities—a custom which persists to this day. In 1991, DRC began publishing its digest with IEEE; they can all be found [here on IEEE Xplore](https://ieeexplore.ieee.org/xpl/conhome/1000199/all-proceedings). Throughout this period, DRC featured reports of many novel and record-setting devices, including the HEMT (High Electron Mobility Transistor), VCSEL (Vertical Cavity Surface Emitting Laser), HBT (Heterojunction Bipolar Transistor), and nanoscale MOSFETs.

In recent years, DRC has continued to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an [article in the Journal of the Electron Device Society](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486). DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

Today, as we look forward to the next 75+ years of device innovation, DRC continues to lead the way in showcasing top-caliber research, facilitating vibrant discussion and debate and acting as a platform to nurture the next generation of device engineers. We welcome you to join us at the next DRC!

To learn more about DRC's history, please see [Aaron Franklin, Debdeep Jena and Deji Akinwande, "75 Years of the Device Research Conference—A History Worth Repeating," in IEEE Journal of the Electron Devices Society, vol. 6, pp. 116-120, 2018. doi: 10.1109/JEDS.2017.2780778](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486).

### **Topics**
* Biological Devices
* Devices for Extreme Conditions
* Heterogeneously Integrated Devices
* Memory Devices
* Modeling and Simulation of Devices
* Nanoscale and Vacuum Devices
* Optoelectronic and Optical Devices
* Other Emerging Devices
* Power Devices
* Quantum Devices
* RF and Terahertz Devices
* Spintronic and Magnetic Devices
* Thin-film Devices
* Wide-bandgap Devices
 
### **Invited Speakers**
* Patrick Fay, University of Notre Dame
* Susanne Hoffmann-Eifert, Peter Grünberg Institute
* Sanghyeon Kim, Korea Advanced Institute of Science and Technology
* Sriram Krishnamoorthy, University of California, Santa Barbara
* Mario Lanza, King Abdullah University of Science and Technology
* Xiuling Li, The University of Texas at Austin
* Marko Radosavljevic, Intel Corporation
* Siddharth Rajan, The Ohio State University
* Giordano Scappucci, Delft University of Technology
* Fisher Yu, University of Arkansas
* Wenjuan Zhu, University of Illinois at Urbana-Champaign




Registration is required to attend this event. If you have not already done so, please use the link below to register for a ticket to the conference:

https://www.mrs.org/drc-2022/registration

Registration Is Required

DRC 2022

DRC continues to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an article in the Journal of the Electron Device Society. 
DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

technical paper

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

To register for this event, please follow the link below.

Sequential vapor infiltration (SVI) with trimethylaluminum into UV-cured films visualized the presence of internal layered structures with different Al distributions dependent on chemical structure of monomers. X-ray reflectivity measurements revealed that the mixing of monomers was a positive way to homogenize the Al distributions in UV-cured films.

Internal Layered Structures of UV-Cured Thin Films after Sequential Vapor Infiltration Analyzed by X-ray Reflectivity Measurements

Until now, no in-situ, non-destructive and accurate technology has been invented, which introduces huge difficulties into the superhydrophobic surfaces research and applications. We developed an optical technology to characterize the state of superhydrophobic surface.

Optical Metrology of Characterizing Superhydrophobic States on Patterned Substrates

In direct writing laser lithography, hybrid structures such as gratings on top of resist structures can be generated by combining thermal NIL with DWL lithography. At 120 °C, it is still possible to pattern the resist into at least 4 µm depth without degrading the photosensitive component.

Hybrid structures achieved by direct writing laser lithography - tuning the contrast and surface topography of grayscale photoresist with nanoimprint lithography

Colors produced from nanostructures of different geometries and materials in 2D and 3D made mostly using 3D printing with two-photon polymerization.

Nanostructured Colors from Colorless Materials

We investigated the combination of maskless UV lithography and 2PP (two-photon polymerization) on a standard photo-resist: SU-8. 2PP technology is known to be slow. The advantage of mixing the technologies becomes obvious when some elements of a design can be exposed faster using maskless UV lithography.

Hybrid 2D & 3D Lithography

In this work, we discuss the fabrication process for two types of low-index metalenses composed of air-spaced elements.  First, we discuss the fabrication of our recently demonstrated two element hybrid achromatic metalens (HAML)  that employs nanopillars. Second, we discuss a novel air-spaced, varifocal, metalens that employs nanoholes.

Achromatic and Varifocal Metalens Doublet Fabrication by Two-photon Lithography

We present 3D printed Hybrid metasurfaces that employ variable height (3D) phase plates, pillars, and holes that provide additional degrees of freedom beyond purely planar designs. These structures were 3D printed with two-photon lithography technique.

Hybrid Metasurface Fabrication Using Two-photon Lithography

Molybdenum disulfide, as  a transition metal dichalcogenide, has attracted huge attention for its good optical properties. However, to produce corresponding arrays of nano/microscale devices, resist-based lithography and etching generate permanent contaminations and damages. Here, we report a  method capable of generating arbitrary MoS2 patterns without additional lithography or etching processes.

Multiplexing Rubbing-Induced Site-Selective (RISS) Method for Manufacturing MoS2 Device Arrays

In this work, we study the photo-response properties (e.g., photoresponsivity and noise equivalent power (NEP)) of in-plane MoS2 photodetectors as the function of their geometric dimensions (e.g., thickness, length, and width of photoactive layers) and fabrication conditions (e.g., doping, etching, and substrate choice).

Fabrication optimization of the photo-response characteristics of MoS2 photodetectors for biosensing applications

CVD graphene has brought interest from the biosensors community. Previous work in our group demonstrated a unique fabrication protocol for graphene solution gated field effect transistor (SGFET). This study presents the electrochemical characterization and first biological detection campaign (using aptmamers as probe for hormone detection) of our SGFET sensors.

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Internal Layered Structures of UV-Cured Thin Films after Sequential Vapor Infiltration Analyzed by X-ray Reflectivity Measurements

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Next from EIPBN 2021

Internal Layered Structures of UV-Cured Thin Films after Sequential Vapor Infiltration Analyzed by X-ray Reflectivity Measurements

Similar lecture

Revisiting Gate-Induced Drain-Leakage in Nanowire FETs for 1T-DRAM

Stay up to date with the latest Underline news!

PRESENTATIONS

CONFERENCES

COMPANY

RESOURCES

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