United States

Plasmonic biosensors have been attracted growing attentions in recent years because of their unique properties of high sensitivity, label-free operation, and suitable for high-throughput real-time detection. Here, we proposed a facile, use-friendly and cost-effective image-based plasmonic biosensor to detect the concentration of various biomolecule.

EIPBN 2021

Nanotransfer printing of plasmonic nanostructures on convex lens for highly sensitive image-based biosensing

image-based; plasmonic biosensor; nanotransfer

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


This event requires a registration to attend, please register [here](https://web.cvent.com/event/536cea3d-4c0d-4d50-8939-529979d80785/summary) to purchase a ticket. 

IEEE WiPDA 2021

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

poster

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

To register for this event, please follow the link below.

A modular, UHV sealed FEG operational betwee 30-100 keV has been developed. This design lends itself to integration onto thermionically operated TEMs, EBL into FEG operation or in R & D applications. Graphitic carbon and gold particles have been resolved confirming a resolution of better than 0.24nm at 60-100 keV.

A modular 100 keV vacuum sealed FEG

In this contribution, the generation of multiple electron-beam from an InGaN photocathode was demonstrated. 25 electron beams were observed by irradiating 25 lasers. The averaged diameter was 0.6 mm with a gaussian distribution. The deviation in diameter was 17%.

Multiple Electron-Beam Generation from InGaN Photocathode

For direct writing laser lithography, GenISys BEAMER and LAB software allows for correcting proximity effects and to achieve fast approximation of a desired shape without tedious iterations. We show the importance of parameters such as vertical focus variation on staircase structures and lens-like shapes using a Heidelberg Instruments DWL 66+.

Bend the curve: the benefit of optical proximity correction in direct writing lithography simulation and experiment

After irradiating the electron beam, we measured the surface potential with an electrostatic force microscope (EFM).
In the presentation, we will explain the measurement results using the model we devised.

Investigation of Non-Charging Exposure Conditions for Insulating Resist Films in Electron Beam Lithography

We investigate the surface wetting properties for a range of micro/nanofabricated topography on aluminium surfaces supported by ion-beam processing to enhance liquid-solid interaction.

Surface Wetting on Micro-milled or Laser-Etched Aluminium with Ion-Beam Post-Processing

This work presents the analysis of spike, burst, and network burst activity in a microfluidic brain-on-chip. A collection of activities in the electrophysiological recordings, measured by multielectrode arrays, provided strong clues for the maintenance of human induced pluripotent stem cells-derived cortical neuron cultures in 3D for 37 days.

Detection of network burst activity in a MEMS-based 3D neuronal cell culture system

This work explored an accessible and cost-effective way to prepare high quality 2D Bi and derivatives on SiO2/Si substrates by e-beam evaporation. The electrical and thermoelectric properties were characterized. Our study builds a platform to realize high-quality 2D Bi, which may also be suitable in other Xenes.

Tuning Electrical Properties of E-beam Evaporated 2D Bi and Derivatives

In this study, we investigated whether UV-cured resin thin films modified by atomic layer deposition (ALD) could be removed completely by dry etching procedures. UV-nanoimprinted deposition masks were removed completely by sequential physical and chemical dry etching procedures, to demonstrate and area selective deposition of aluminum oxide.

Nanoimprinted Deposition Masks for Area Selective Atomic Layer Deposition of Aluminum Oxide

Long silver rods SERS layer was constructed by using fine grit (1µm) sandpaper as a template for imprinting nano-patterns. Therefore, costly nano lithographic processing was avoided. Raman spectra of R6G were obtained. The signal strength decreased linearly at reduced concentrations in logarithmic scale, as expected for SERS, down to 1nM.

 Low Cost Nano Imprint for Surface Enhanced Raman Scattering

In this work, we apply multilayer etching mask and optimize the etch process to improve etching rate and etching selectivity to pattern sapphire antireflection nanostructures. Initial results show 2-D sapphire nanostructures with 530 nm width and 470 nm height, resulting in two-fold aspect ratio enhancement over previous work.

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Nanotransfer printing of plasmonic nanostructures on convex lens for highly sensitive image-based biosensing

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A modular 100 keV vacuum sealed FEG

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