United States

we report the use of localized surface plasmon resonance (LSPR) sensor for real-time, label-free monitoring the adhering process of C. albicans onto the gold nanopillar array.  We also employ this sensor feature to elucidate how C. albicans’ adhesion is affected by different electrical properties of the material surface.

EIPBN 2021

Replicate Nanopillar Arrays by Soft Lithography for Real-time Biosensing of C. Albicans Adhesion

lspr

nanopillar array

real-time

ICPR 2020 is the premier international conference on Pattern Recognition, gathering leading researchers from around the world to present their latest achievements in Pattern Analysis and Recognition, applied Artificial Intelligence and Machine Learning. The topic of the year is " Putting Artificial intelligence to work on Patterns". 
For the first time, ICPR has employed a two-round review process similar to journal submissions, with new papers allowed to be submitted in either the first or second round and papers submitted in the first round and not accepted allowed to be revised and re-submitted for second round review. 

In this edition of the **ICPR 2020** Conference, there are 1407 Oral/Poster presentations organized in five Tracks: 
- Artificial Intelligence, Machine Learning for Pattern Analysis; 
- Biometrics, Human Analysis and Behavior Understanding; Computer Vision, Robotics and Intelligent Systems; 
- Document and Media Analysis; and 
- Image and Signal Processing. 

The **ICPR 2020** Main Conference program also includes 7 Keynotes from prominent world-renowned scientists, 8 Tutorials, 28 Demos, 8 Challenges, 2 Panels, as well as an Industry/Sponsor Exhibition. In addition, 41 Workshops on a range of important current and emerging research topics complete the ICPR 2020 program. 


ICPR 2020

poster

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

To register for this event, please follow the link below.

We introduce a UV greyscale lithography process combining large surface patterning with a high vertical resolution. To reach a low contrast curve slope, we studied the annealing processes Soft Bake and Post Exposure Bake. We also achieve a 50nm Si steps within our presented plasma etching process.

Optimized UV grayscale process for high vertical resolution applied to spectral imagers

We  optimized the built-in lens mask (BILM) which was shown to be able to form a three-dimensional image in a single exposure by using its multiple focus function, in order to creat the ideal target shape.

Optimization of the Built-in Lens Mask for Three-Dimensional Photo Lithography

The goal of this work is to build compartmentalized microelectrode arrays to assess the impact of conditioned cell culture media exchange between two initially isolated neuronal networks. The fabrication of biocompatible dual-chamber microelectrode arrays is presented, including the manufacturing and attachment of resin rings with controllable openings for fluid exchange.

A dual-chamber microelectrode array to facilitate neuronal network communication

Width/depth and shape of volume of resist modified by ion beam as function of ion energy, exposure time and ion mass (He, Ne, Ar, Ga, Kr, Xe и Rn) is investigated by Monte-Carlo simulation. Sub-10nm resolution is found and confirmed. Analytical interpolating expressions for arbitrary ion mass, energy are submitted

 Ion beam lithography: resist modification volume determination and sub-10nm resolution prediction via simulation

In spite of M-C simulation shows strong dependence proximity function on depth (3D-PF)  it is possible to find effective α, β, η parameters for two-dimensional PF using original algorithm which considers development. Good agreement with experimental data is demonstrated thus proximity parameters now can be calculated for arbitrary layered material

PRESENTATION OF PROXIMITY FUNCTION BY THREE PARAMETERS , , BASED ON MONTE CARLO METHOD AND COMPARISON WITH EXPERIMENT

PMMA exposure sensitivity to both electrons and gallium ions at identical conditions was measured. It was found that a positive sensitivity to gallium ions is 1000 times higher than to electrons, all at the same conditions. Original procedure allowed to measure ion contrast (~3) for highly nonuniform in depth exposure

 Ion beam lithography: sensitivity/contrast in IBL vs EBL.

Our group used cellphone CMOS camera module, based on OV5648-BSI image sensor, to image 200keV electron beam in Transmission Electron Microscope and 30keV ion beam in Helium Ion Microscope.

Cellphone CMOS Camera Module for Imaging with Charged Particle Beams.

This work presents an improvement in the chemical and mechanical stability of a nanofluidic device formed in poly(ethylene glycol) diacrylate (PEGDA), a PEGbased UV resin for UV-NIL, by adding a cross-linking agent.

Surface Charge Density of Nanofluidic Devices with TMPTA UV Resins of Different Cross-Linking Agent Concentration Fabricated by UV Nanoimprint Lithography

This article provide a method about controlled exfoliation of 2D Bi2Se3 via nano-imprint. which could improve the yield and electrical performance. 2D Bi2Se3 with improved performance holds great promise for innovative photoelectric and thermoelectric applications.

Exfoliation of Two-dimensional Bismuth Selenide Based on Nanoimprint Lithography

Resonances in most of the metasurfaces are strongly depends on the geometry of the dielectric nanostructures and requires costly high-precision nanofabrication techniques. So we propose a robust structural symmetry-breaking silicon metasurface with ultra-narrow transparency.

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Optimized UV grayscale process for high vertical resolution applied to spectral imagers

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