United States

Human brain-inspired neuromorphic computing (NC), which emulates neural activities, is considered for the low-power implementation of artificial intelligence. The realization of hardware elements, such as synaptic devices, is an essential path towards this goal. Electrolyte gating has been widely used for conductance modulation by massive carrier injections at low voltage and has been proven to be an effective way of emulating synaptic functions. Synaptic devices, in the form of synaptic transistors, have been studied using a wide variety of materials like oxides [1], organic materials [2], and 2D materials [3]. However, studies on metal-based ferromagnetic synaptic transistors remain unexplored. Additionally, a synaptic device based on magnetic metal has a spin degree of freedom that can be tuned along with. Here, we have demonstrated a three-terminal cobalt-based synaptic transistor by electrolyte gating at room temperature, which is the first kind of such studies. The working principle of the transistor is based on the formation of an electric double layer (EDL) at the interface of ionic liquid and channel and by intercalation/ extraction of oxygen ions. 
We have achieved gating controlled non-volatile, multilevel conducting states for analog computing. The device could successfully emulate essential synaptic functions related to short-term plasticity and long-term plasticity. Moreover, a transition from short-term memory to long-term memory could be achieved by tuning gate pulse amplitude, duration, and number. The crucial cognitive functions of learning, forgetting, re-learning, and the re-forgetting process were emulated. Along with memory and learning, the device showed dynamic filtering behavior as well. These results provide an insight into the potential application of ferromagnetic metal-based synaptic transistor for large-scale, low power consuming, silicon compatible neuromorphic computing network.

Materials Challenges for Memory

Cobalt Based Synaptic Transistor by Electric Double Layer Formation for Neuromorphic Computing.

synaptic transistor; multilevel conducting states; synaptic plasticity


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For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

Given the ongoing global health concerns associated with COVID-19 (Coronavirus), the DRC leadership has decided to hold the 2021 Device Research Conference in a virtual (online) format. This follows an enormously successful 2020 DRC held virtually, in which we had record attendance and worldwide participation of more than 875 attendees from 33 countries.

The 2021 Conference will feature:

* Informative, timely short courses in rapidly developing fields
* Oral and poster presentations on electronic/photonic device experiments and simulations
* Plenary and invited presentations given by worldwide leaders
* Evening “rump” session
* Strong student participation and Student Paper Awards

DRC is held in coordination with the Electronic Materials Conference (EMC), which will occur the same week, from June 23-25. As has happened in person in past years, in 2021, the virtual DRC and EMC sessions on the shared day, Wednesday, June 23, will be open to all attendees from both conferences. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchanges of information between attendees of both Conferences. For information on the 63rd Electronic Materials Conference, please visit the [EMC 2021 website.](https://www.mrs.org/63rd-emc/)

2021 DRC individual presentation videos will become available in Underline at the end of each technical session. A recording of each full live session with Q&A will be posted later during the conference. To facilitate re-viewing of recorded talks and sessions, the DRC Underline site will remain open through 11:59pm (US EDT) on July 7th. DRC Conference registration will remain open at www.mrs.org/drc-2021/registration through June 30th.

Thank you for joining us at the 2021 Device Research Conference!

**General Chair**
<br>Zhihong Chen, Purdue University

**Technical Program Chair**
<br>Becky (R.L.) Peterson, University of Michigan

**Technical Program Vice-Chair**
<br>Gregg Jessen, BAE Systems

You can register for the 79th Device Research Conference with the following link. https://www.mrs.org/drc-2021

DRC 2021

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

poster


![](https://assets.underline.io/uploads/markdown_image/1/image/2e10c515564e9ec3287ee4c664011c20.png)

The energy cost of storing and moving data is enormous, and is growing at such a rapid pace that within a few years the power demand may overwhelm some developed nations. Non-volatile memory (NVM) and neuromorphic computing are enabling critical advances in this area, but there are many scientific and technological challenges. This conference will cover the materials challenges of different memory technologies, from the fundamental processes and mechanisms, to industry perspectives on materials specifications and manufacturing.

Rational design of redoxed-based memristive devices for novel computing paradigm

Ferroelectric control of Rashba states: towards non-volatile spintronics driven by ferroelectricity

Materials to memory: why and how

Analog memory: materials, devices, applications

An opportunity for magnetoelectrics in complex oxides: designing heterostructures at the atomic scale

Smart 2D materials: the new frontier

What does gender got to do with science

Phase change memory devices for electrical and optical in-memory computing

Ferroelectric switching of spin-to-charge conversion in GeTe

Resistive random access memory (ReRAM) is touted to replace Silicon based flash memory due to its low operating voltage, fast access speeds and the potential to scale down to nm range for ultra-high density storage. In addition, its ability to retain multi level resistance states makes it suitable for neuromorphic computing application. Here, we develop a cationic ReRAM with a sputtered MgO as the insulating layer. The Ag/MgO/Au ReRAM stack reveals a strong dependence of its resistive switching properties on the sputtering conditions of MgO. Due to the highly stable sputtered MgO, repeatable resistive switching memory is achieved with a low ON voltage of ~0.7V and memory window of ~ 1x 105. Limiting Ag diffusion through a top electrode modified W/Ag/MgO/Au stack significantly reduces the abruptness of resistive switching, thereby demonstrating analog switching capability. This phenomenon is evident in the improved linearity and symmetry of potentiation and depression weight modulation pulses, demonstrating ideal Hebbian synaptic learning rules.

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Cobalt Based Synaptic Transistor by Electric Double Layer Formation for Neuromorphic Computing.

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