Lecture image placeholder

Premium content

Access to this content requires a subscription. You must be a premium user to view this content.

Monthly subscription - $9.99Pay per view - $4.99Access through your institutionLogin with Underline account
Need help?
Contact us
Lecture placeholder background
VIDEO DOI: https://doi.org/10.48448/8am8-3f96

technical paper

Materials Challenges for Memory

April 11, 2021

Live on Underline

Rational design of redoxed-based memristive devices for novel computing paradigm

Please log in to leave a comment

Downloads

Transcript English (automatic)

Next from Materials Challenges for Memory

Ferroelectric control of Rashba states: towards non-volatile spintronics driven by ferroelectricity
technical paper

Ferroelectric control of Rashba states: towards non-volatile spintronics driven by ferroelectricity

Materials Challenges for Memory

Manuel Bibes
Manuel Bibes

11 April 2021

Similar lecture

Phase change memory devices for electrical and optical in-memory computing
technical paper

Phase change memory devices for electrical and optical in-memory computing

Materials Challenges for Memory

Abu Sebastian
Abu Sebastian

11 April 2021

Stay up to date with the latest Underline news!

PRESENTATIONS

  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved