Electronic devices increasing complexity and reduced material redundancies raise concerns about physical failures, especially in metal interconnects. Among various mechanisms, thermomechanical-induced damage, initiated by short bursts of current, remains a major reliability challenge. Experimental and numerical investigations were conducted on Al-SiO2 structure, revealing distinct failure behaviors based on power input and interconnect dimensions. The findings highlight the danger of surge current-driven damage and the need for careful analysis and mitigation strategies in advanced packaging design.