United States

In this work, we explored the TDDB TTF deterioration under low-frequency of advanced n-FinFETs by analyzing the electrical parameter degradation during the stress. This phenomenon is physically attributable to Maxwell-Wagner instability due to the additional defects generated in IL during the low-frequency AC TDDB stress.

IRPS 2024 Main Conference

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

dielectric.

tddb

finfet

technical paper

#### Welcome to the 62nd IEEE International Reliability Physics Symposium (IRPS)! 
**The 2024 IEEE International Reliability Physics Symposium (IRPS) was held in Dallas, Texas from April 14 to 18, 2024.** 

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**[IRPS 2024 eGuide](https://drive.google.com/file/d/1DHxkWbafodK_D2HlDi7lwRK7KatgBgBD/view?usp=drive_link)** 
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**IRPS 2024 General Chair Welcome Message**

On behalf of the Management Committee of the IEEE International Reliability Physics Symposium (IRPS) and the IRPS Board of Directors, it gives me great pleasure to extend a warm welcome to all who are planning to attend the IRPS 2024, scheduled to take place from April 14-18, 2024, in Dallas, TX. 
Over its 62-year history, IRPS has solidified its position as the premiere conference for engineers and scientists to present new and original work in the field of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and other parts of the world, IRPS aims to deepen our understanding of reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS offers diverse opportunities for attendees to enhance their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

The IRPS 2024 technical activities will begin with two days of a total of twenty tutorial sessions covering a broad spectrum of emerging reliability topics beyond CMOS device, circuit and system reliability. These sessions are devoted to both newcomers as well as experts. Three reliability Year in Review (YIR) talks focusing on neuromorphic computing, dielectric breakdown in leading edge devices, and GaN technology will be provided on Monday after the tutorials.

The IRPS 2024 technical program will feature four distinguished keynote talks in the plenary sessions delivered by Prof. Shinichi Takagi from The University of Tokyo and Dr. Su Jin Ahn from Samsung on Tuesday, Dr. Rajeev Malik from IBM on Wednesday, and Dr. Sameer Pendharkar from Texas Instruments on Thursday. The technical program, organized into three parallel tracks, consists of contributed and seventeen invited papers from leaders in industry and academia. Additionally, two invited talks by recipients of paper awards from our sister conferences, European Symposium on Reliability of Electron Device Failure Physics and Analysis (ESREF) 2023 and the International Integrated Reliability Workshop (IIRW) 2023, will be given in the technical program. 

Tuesday evening will host ten workshops, offering an opportunity for in-depth, face-to-face discussions on emerging reliability challenges, including the three IRPS 2024 focus topics. A poster session will be held in the Austin Ranch outside the symposium building on Wednesday evening. Both events are sure to be lively. The IRPS 2024 and the International ESD Workshop (IEW) will be co-hosted with IEW registrants participating in both IRPS and IEW programs.

The IRPS 2024 will adopt a hybrid conference style, allowing virtual access to live oral presentations hosted by the Underline. Real-time streaming of all technical events (excluding Workshops and Posters) will be available in the US Central Timezone, providing virtual attendees with Q&A opportunities. For those virtual attendees who cannot watch the live presentations, the material will be available on demand to all attendees after the symposium. All authors will be presenting in person.

Finally, I would like to extend my extreme gratitude to our patrons, exhibitors, and all participants for their invaluable support, which makes IRPS successful. 

Please enjoy the IRPS 2024!

Koji Eriguchi, General Chair 
of 2024 IRPS Management Committee
 
**About IRPS** 
The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

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The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

From over 50 years, dielectric breakdown is a crucial reliability concern in electron devices. Despite various theories accurately replicating breakdown trends in accelerated conditions, discrepancies arise in estimating device lifetime under operating conditions. The latest Carrier Injection (CI) model harmonizes these inconsistencies, revealing dynamic changes in time-to-breakdown E-field dependence. By incorporating trapped charges into CI model, we present a more comprehensive understanding of breakdown, demonstrating that trapped charges enhances reliability by delaying trapping into precursors.

The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation

In this paper, we present an extensive comparative study of the degradation and recovery kinetics of vertical and lateral-based Ge-on-Si photodiodes. We show that the combination of defects around specific interfaces, in the presence of hot carriers, can lead to localized degradations in the depletion regions. By complementing experimental results with insights from TCAD simulations, we demonstrate the complex interplay between stress, sense conditions, and p-i-n junction types in determining the degradation kinetics.

Degradation and recovery kinetics study of vertical and lateral Ge-on-Si photodetectors

GaN products are now being used for a wide variety of applications, with different types of stresses. Traditional reliability validation and calculations do not cover usage for many types of stresses seen in power supply applications, e.g. those from hard-switching or ringing. There is no adequate methodology, therefore, to calculate lifetime under actual-use conditions. In this paper, we provide a model-based methodology and calculate lifetimes of TI GaN products for usage in a range of...

Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications

This study focuses on utilizing high voltage capacitance-voltage (HV-CV) analysis to investigate the correlation between defect generation regions and field plates (FPs) in pGaN HEMT devices. We combine ID-VG with C-V to show that optimized process not only enhances performance, but also improves reliability, particularly below the FP near the gate.

HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power Applications

This work provides a characterization and modeling of the mechanisms responsible for the vertical loss (VL) of charge in charge trap 3D NAND arrays. Contributions of charge detrapping and storage charge loss (SCL) are experimentally separated for the first time. Studying the dependence of SCL activation energy on cycling and programmed level, evidence for the physical mechanisms contributing to it is provided. Finally, a simple yet effective model is devised which reproduces the VL transients.

Experimental Segmentation of Vertical Charge Loss Mechanisms in Charge Trap-Based 3D NAND Arrays

SiC MOSFETs are key components for car electrification, the killer application being the traction inverter with power levels of 100+kW. This requires modules containing tens of SiC die, which, combined with the harsh temperature requirements, puts severe constraints on the reliability of the individual SiC die. This paper will discuss both the extrinsic and intrinsic reliability challenges of SiC MOSFETs, and the approaches and modeling of gate related failure modes (HTGB, ALT-HTRB and cosmic rays).

On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs

Accurate prediction of EM-induced MTTF for on-chip power/ground grids with advanced EDA tools requires knowledge of geometry dependent random  parameters such as copper grain size, atomic diffusivity, resistivity, critical stress, and their distributions. A unified model describing resistance evolution in the segments with arbitrary geometries and loads can address this challenge. This paper presents such a model and demonstrates its predictive power by comparison with experimental data from the 12 nm GlobalFoundries FinFET technology node.

A Unified Physics-Based Stochastic Model for EM-Induced Resistance Degradation in BEoL Interconnect Segments

This paper reviews the reliability of Solid-State Drives (SSDs) based on NAND Flash memory with a focus comparing enterprise SSDs using TLC and QLC NAND. The paper analyzes various datasets including internal qualification methods and field studies. The data indicates that QLC SSDs have similar reliability to TLC SSDs, when NAND reliability mechanisms are sufficiently mitigated. Tradeoffs related to NAND differences and reliability mitigations and the resulting effect on performance, QoS, and endurance are highlighted.

Comparing the Reliability of Solid-State Drives Based on TLC and QLC NAND Flash Memories

Bipolar switching between accumulation and inversion can result in an unexpected threshold voltage drift in SiC MOSFETs. This gate switching instability (GSI) is significantly larger than what is known for bias temperature instability (BTI). Based on the similarity to charge pumping experiments, we develop a comprehensive physical model for GSI based on recombination enhanced defect reactions, derive a closed form analytical solution, and finally validate the model against detailed experimental data.

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

Predicting aging behavior is essential for product development to ensure in-field lifetime. Conventionally, aging margin is determined by identifying the maximum value of Vmin shifts through a series of HTOL tests. In this paper, we propose a machine learning-based methodology to predict Vmin shifts. Compared to the conventional aging margin, this methodology offers & 20% reduction of aging margin. Besides, it demonstrates 3x sensitivity to NBTI than on-chip NOR for applications in automotive products.

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The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation

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Next from IRPS 2024 Main Conference

The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation

Stay up to date with the latest Underline news!

PRESENTATIONS

CONFERENCES

COMPANY

RESOURCES

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