United States

This paper presents a compact three-level (3L) Gallium Nitride (GaN) power module with low parasitic parameters. The power loop, gate loop and PCB layout are designed and optimized carefully to achieve: 1) low parasitic parameters; 2) good thermal performance; 3) compact size and high integration; 4) easy utilization on building 3L ANPC converter. To achieve higher power rating, for two highfrequency (HF) switch legs, three GaN Systems’ GS665016T are paralleled and for the low-frequency pair, two switches are paralleled considering the much lower switching loss. The decoupling capacitors, driver circuits and auxiliary power supplies are all integrated into the module for the easy utilization and small parasitics. Double-pulse test (DPT) is applied to test the electrical characteristics and a bidirectional three-phase 3L ANPC converter is built using the proposed modules to verify the electrical performance and thermal performance.

IEEE WiPDA 2022

Compact Three-Level GaN Power Module Suitable for Active-Neutral-Point-Clamped (ANPC) Three-Level Converter

gan; anpc

decoupling cap

integrated gate drive

gan devices

three-level power module

technical paper

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 The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.
 
 **Topics of interest**
* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency Or Compact Converters
* Safe Operating Areas Of Wide Bandgap Devices, including Short Circuit, Spike, &Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Hard-Switched & Soft-Switched Application Analysis
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, Grid Power Systems, Space and Aerospace
* Wide Bandgap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging

You must register to attend this event. If you haven't done so already, please use the link below to register for the event. All registered attendees will have access to the event site on November 4th.

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The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

Packaging and integration of wide bandgap power semiconductors

Managing EMI of SiC power electronics

Reliability of SiC power devices for power conversion applications

Evolution of SiC substrate production understanding and managing defects in SiC

Emerging Gallium Oxide power semiconductor materials and devices

GaN power devices: current Status, challenges, and emerging technologies

Application trends for LV GaN power transistors

Bidirectional WBG Switch Technology

The past decade has seen noticeable advancements in the miniaturization of wide-band gap semiconductor technology making it feasible to be applied in demanding applications such as more-electric-aircrafts (MEA). Multiple high speed electric motors operating in parallel with current ratings in hundreds of amps are required to match the power delivery capability of conventional jet engines. As a result, the power electronics driving the motors require special attention to parallel multiple active switches in order to meet the high current requirements. This paper presents the design of an axially stator mounted 250 kW integrated modular motor drive for MEA applications. The design considerations presented include optimal component placement and layer stackup to minimize voltage overshoots during switch commutation, optimal gate drive layout to synchronize the current sharing of multiple GaN active switches, and the selection process of the on-board current sensor. Lastly, experimental test results are presented that verify the efficacy of the proposed design.

Design of High Current, High Power Density GaN Based Motor Drive for All Electric Aircraft Application

This paper provides an optimization process of a 100-W three-level flying capacitor totem-pole PFC in USB TypeC Power Delivery (PD) for aircraft applications. The switching frequency and PFC inductor current ripple are varied to set the PFC inductance variation range and design the differential mode (DM) and common mode (CM) filter to meet the EMI requirement in the DO-160 standard. The design process for all the magnetic components is described with results at different switching frequencies and current ripples. The total volume and loss for all cases with both single-stage and two-stage filters are plotted and compared. Pareto fronts for the two cases are drawn to show the optimal design parameters for the application.

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Compact Three-Level GaN Power Module Suitable for Active-Neutral-Point-Clamped (ANPC) Three-Level Converter

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Packaging and integration of wide bandgap power semiconductors

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