VIDEO DOI: https://doi.org/10.48448/nnkz-fe91

keynote

IEEE WiPDA 2022

November 08, 2022

Redando Beach, CA, United States

What is the Right Level of Integration for GaN Power Devices?

Please log in to leave a comment

Downloads

Transcript English (automatic)

Next from IEEE WiPDA 2022

keynote

Designing with GaN to Solve Today’s Global Power Challenges

IEEE WiPDA 2022

Jim Witham

08 November 2022

Similar lecture

poster

Modeling-based design and benchmarking of Al-rich AlGaN 3D nanosheet MOSFET and MOSHEMTs for RF Applications

DRC 2021

Ashwin Tunga and 2 other authors

21 June 2021

Stay up to date with the latest Underline news!

PRESENTATIONS

  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved