VIDEO DOI: https://doi.org/10.48448/j7mx-w467

technical paper

IEEE WiPDA 2022

November 08, 2022

Redando Beach, CA, United States

Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs

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technical paper

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

IEEE WiPDA 2022

+6
Jiashu Qian and 8 other authors

08 November 2022

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