Lecture image placeholder

Premium content

Access to this content requires a subscription. You must be a premium user to view this content.

Monthly subscription - $9.99Pay per view - $4.99Access through your institutionLogin with Underline account
Need help?
Contact us
Lecture placeholder background
VIDEO DOI: https://doi.org/10.48448/j7mx-w467

technical paper

IEEE WiPDA 2022

November 08, 2022

Redando Beach, CA, United States

Effects of Oxide Electric Field Stress on the Gate Oxide Reliability of Commercial SiC Power MOSFETs

Please log in to leave a comment

Downloads

PaperTranscript English (automatic)

Next from IEEE WiPDA 2022

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs
technical paper

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

IEEE WiPDA 2022

+6Jiashu Qian
Jiashu Qian and 8 other authors

08 November 2022

Stay up to date with the latest Underline news!

Select topic of interest (you can select more than one)

PRESENTATIONS

  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved