Lecture image placeholder

Premium content

Access to this content requires a subscription. You must be a premium user to view this content.

Monthly subscription - $9.99Pay per view - $4.99Access through your institutionLogin with Underline account
Need help?
Contact us
Lecture placeholder background
VIDEO DOI: https://doi.org/10.48448/qnxj-7552

technical paper

MMM 2022

November 07, 2022

Minneapolis, United States

Electrical detection of magnetization of a layered semiconducting ferromagnet using WTe2

Spin-orbit torque (SOT) switching devices fabricated by combining van der Waals (vdW) based semiconducting ferromagnets (FMs) and Weyl semimetal (WSMs) are appealing because of electric field-controlled magnetism and unconventional charge to spin conversion, which can be exploited for modular memory and logic devices. For instance, the vdW based FM semiconductors, such as Cr2Ge2Te6 (CGT), offer us the opportunity to study SOT devices where electric field-controlled magnetism can be used for enhanced device functionalities1. Also, we have recently shown that field-free deterministic switching of perpendicular magnet can be obtained by utilizing the unconventional spin orbit torque in WTe22. In SOT switching devices, the electrical readout of the semiconducting FM layer is essential for device functionality. Electrical detection of magnetization in conventional insulating/ semiconducting ferromagnet (FM) is routinely achieved by utilizing the spin hall effect generated by the adjacent heavy metal layer3. The electrical readout of magnetization in 2D semiconducting FM has been demonstrated by coupling Cr2Ge2Te6 with heavy metals4 and topological insulators5. However, few reports have shown electrical detection in a vdW based semimetal/FM-semiconductor heterostructures. As shown in Fig. 1, our initial measurements have demonstrated electrical detection of magnetization in Cr2Ge2Te6 by measuring the anomalous Hall resistance in WTe2/CGT bilayers. On the same device, the resistance of individual CGT is more than 100 times higher than the resistance of the bilayer structure as plotted in Fig .2, therefore most of the current is flowing through the WTe2 layer. We will present detailed measurements, which are required to understand the observed anomalous Hall effect induced at the interface in WTe2/CGT bilayer systems.

1. I. A. Verzhbitskiy, H. Kurebayashi and H. Cheng, Nat. Electron., Vol. 3, p.460 (2020). 2. IH. Kao, R. Muzzio and H. Zhang, Nat. Mater. (2022). 3. A. S. Ahmed, A. J. Lee and N. Bagués, Nano Lett., Vol. 19(8), p.5683 (2019). 4. V. Gupta, T. M. Cham and G. M. Stiehl, Nano Lett., Vol. 20(10), p.7482 (2020). 5. V. Gupta, R. Jain and Y. Ren, arXiv:2206.02537 (2022).


Transcript English (automatic)

Next from MMM 2022

Fin geometry Multiferroic BiFeO3/CoFe2O4 Nanocomposites formed by templated self
technical paper

Fin geometry Multiferroic BiFeO3/CoFe2O4 Nanocomposites formed by templated self

MMM 2022

Tingyu Su and 1 other author

07 November 2022

Stay up to date with the latest Underline news!

Select topic of interest (you can select more than one)


  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved