United States

gallium nitride

mocvd

epitaxy

After two years of virtual conferences, we're excited to host EMC 2022 in person at The Ohio State University in Columbus, Ohio. In addition to cutting-edge technical presentations given in multiple parallel sessions, opportunities to network with colleagues will be present throughout the conference. The size and format of the meeting makes networking easy, whether you have been coming to the conference for many years or are a first-time attendee.

EMC is coordinated with the Device Research Conference (DRC), which will be held the same week, from June 26-29. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchange of information between attendees of both Conferences.

For information on the 80th Device Research Conference, please visit the DRC 2022 website.

EMC 2022

The Electronic Materials Conference (EMC) is the premier annual forum on the preparation, characterization and use of electronic materials. This year’s event will feature a plenary session, topical sessions, a poster session and more.

The heterogeneous integration of IIl-nitride materials with other semiconductor systems for electronic devices is attractive because it combines the excellent electrical properties of the Ill-nitrides with other device platforms. Pursuing integration through metalorganic chemical vapor deposition (MOCVD) is desirable because of the scalability of the technique, but the high temperatures required for the MOCVD growth of Ill-nitrides (>1000 °C) are incompatible with heteroepitaxy on some semiconductor systems and fabricated wafers. Thus it is critical to develop IIl-nitride films with good electrical properties at growth temperatures compatible with temperature sensitive substrates. High crystal quality GaN films with reduced impurity levels have been achieved at temperatures as low as 500 °C using pulsed growth methods such as atomic layer epitaxy and flow modulation epitaxy (FME). However, the electrical behavior of doped LT Ill-nitride films is relatively unexplored. In this work, thin Si-doped LT GaN films were grown at 550 °C by atmospheric pressure MOCVD using an FME scheme. Triethylgallium and ammonia were used as the GaN precursors and disilane as the Si dopant. Because of the very low growth rate (0.006 A/s), 1200 FME cycles resulted in approximately 16 nm-thick films. Two different FME Si-doping schemes were investigated. The first series varied the fraction of cycles in which disilane was injected into the growing film. Samples were grown with disilane injected every 20, 10, 5, 3, 2, and 1 cycle. The second series varied the disilane flow while using the standard frequency of disilane injection (1 in 5 cycles). Samples were characterized by Hall measurements and secondary ion mass spectrometry (SIMS). For the disilane injection series films, electron concentrations up to 6.97 x 4018 om”? were achieved, with electron mobilities from 34 to 119 cm vi sl The peak electron concentration was achieved for the sample with disilane injected in 1/3 of FME cycles during growth. The charge dropped off for samples with higher frequencies of disilane injection, likely because of degraded morphology. The Si concentrations measured by SIMS were somewhat higher than the electron concentrations measured by Hall. The background atmospheric impurity concentrations averaged 2.1 xX 1017 em’? for oxygen and 3.9 x 10 0 cm ~ for carbon, with no apparent dependence on Si concentration. The disilane flow series resulted in films with electron concentrations from 5.98 x 10 ~ cm ~ to 5.91 x 10'9 om”? and electron mobilities from 52 to 115 cm? vi s |, with the highest charge achieved with the highest disilane flow. The sheet resistance of this sample was 1068 Q/#, which is comparable to low resistance GaN films grown at high temperature, which range from 100-500 Q/#. These results demonstrate the potential for LT Ill-nitrides in electronics applications. This work supported in part by Intel Corporation and the Solid State Lighting and Energy Electronics Center.

High to Ultrahigh Si-Doped GaN Grown by Metalorganic Chemical Vapor Deposition at 550 °C for Heterogeneous Integration

technical paper

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High to Ultrahigh Si-Doped GaN Grown by Metalorganic Chemical Vapor Deposition at 550 °C for Heterogeneous Integration

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