Premium content

You must be a premium user to view this content. Institutional subscription access is coming soon!

Login to UnderlineAccess through your institution

technical paper

EMC 2022

June 30, 2022

Columbus, OH, United States

Chemical Potential Control in p-Type N-Polar GaN

DOI: 10.48448/h1xn-a878

Please log in to leave a comment


Transcript English (automatic)

Next from EMC 2022

technical paper

High to Ultrahigh Si-Doped GaN Grown by Metalorganic Chemical Vapor Deposition at 550 °C for Heterogeneous Integration

EMC 2022

Vineeta Muthuraj and 4 other authors

30 June 2022

Similar lectures

Defect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devices

Materials Challenges for Memory

Rafael Jaramillo

12 April 2021


  • Home
  • Events
  • video lectures



Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2020 Underline - All rights reserved

Made with ❤️ in New York City