United States

This paper presents a synthesized version of the silicon odometer aging sensor for measuring the frequency degradation caused by device degradation mechanisms in high volume semiconductor products. In the design, three ring oscillators (ROSCs) composed of inverter, NAND, and NOR gates are implemented in register-transfer-level (RTL), with the ability to be stressed in an AC or DC stress condition. The new odometer has product level features such as calibration-free operation, automatic frequency dead zone escape, and start-up glitch removal. The odometer verilog code was synthesized and automatically placed-and-routed in three different technologies using standard ASIC design tools. As a proof of concept, we show aging data collected from a 65nm test chip with 12 synthesized odometer instances.  

IRPS 2022

A Calibration - Free Synthesizable Odometer Featuring Automatic Frequency Dead Z one Escape and Start - up Glitch Removal

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We applied Monte Carlo (MC) aging simulation flow to explain measured aging effects of PUF (Physically Unclonable Function) circuit. Simulation data provides a good understanding of how PUF circuit might fail with the NBTI effect. The flow predicts updated design shows better reliability result. We demonstrated that NBTI variation model requires correct consideration of the MOSFET device size. 

Reliability Analysis of Physically Unclonable Function by Using Aging Variability Simulation

Channel percolation in Ferroelectric FET (FeFET) due to random spatial distribution of switched domains reduces the number of accessible threshold voltage (VTH) states, thus posing a profound reliability challenge for neuromorphic. However, channel percolation is not universally present in FeFET and only exists when the channel regions underneath the domains have negligible interaction. In this work, we perform a comprehensive evaluation on the parameters that impact neighbor interaction, and hence channel percolation. We reveal i) weak gate control with thick ferroelectric layer enhances neighbor interaction and suppresses percolation; ii) higher temperature can also reduce percolation by weakening the gate control. 

Supressing Channel Percolation in Ferroelectric FET for Reliable Neuromorphic Applications

In this work, we demonstrate that proper engineering of VTH in ferroelectric FET is necessary to ensure correct array operation for in-memory computing applications. We highlight that for all current-based computing operations, it is necessary to keep both the low-VTH and high-VTH states positive to cut off the leakage for grounded unselected cells. To reach that design target, we systematically evaluate various design options for VTH engineering, including the gate metal work function, the body bias, and the buried oxide thickness, using calibrated TCAD. We establish the design guidelines for VTH engineering to ensure the successful operation of in-memory computing.

Ferroelectric FET Threshold Voltage Optimization for Reliable In-Memory Computing

We present an analysis of the impact of passivation and gate foot etching on the reliability and trapping behavior of RF GaN HEMTs. The study is based on HTRB experiments and DCT analysis.  We demonstrate that: passivation significantly impacts on the stability of the gate-leakage characteristics during HTRB stress; best stability is obtained through the use of LPCVD. DCT measurements reveal the presence of two trapping processes;  the slower time constant depends on the processing parameters and increases in presence of optimized gate-foot etch and passivation. The results presented provide information for the optimization of GaN RF devices.

GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

IoT edge devices are expected to have high-capacity and low-power storage memory, as well as smart data processing capability such as machine learning and AI, to fully utilize big-data by co-working with cloud computing system. Such edge intelligence requires energy-efficient data movement and computation, which opens new challenges and opportunities to integrated devices, circuits and systems. In this paper, we introduce monolithic 3D integration technologies of (1) high-density embedded memory and (2) in-memory computing, both of which are enabled by oxide semiconductor FETs and memory devices, for AI acceleration. We address key reliability issues regarding manufacturability for each technology. 

Reliability characteristics of mobility-enhanced FET and wakeup-free ferroelectric capacitor enabled by InGaZnO for machine-learning accelerator in AI chip

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A Calibration - Free Synthesizable Odometer Featuring Automatic Frequency Dead Z one Escape and Start - up Glitch Removal

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Reliability Analysis of Physically Unclonable Function by Using Aging Variability Simulation

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