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technical paper

IRPS 2022

March 28, 2021

Dallas, TX, United States

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs

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Next from IRPS 2022

Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies
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Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies

IRPS 2022

+5Da Wang
Da Wang and 7 other authors

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