China

The prospects of laterally-grown quasi-AlGaN/GaN/AlGaN hetero-structure High-Electron-Mobility-Avalanche-Transit-Time (HEMATT) oscillator as high-power THz-signal source is studied through an indigenously developed Quantum-Drift–Diffusion simulator and experimental verification is reported. Active region of the HEMATT oscillator consists of two-Dimensional Electron Gas (2-DEG), trapped within a GaN quantum well that lies in between AlGaN barriers on either side. Both anode and cathode consist of GaN. Under reverse-biased condition, GaN/AlGaN band offset forces minority electrons to enter into the heterostructure active region and remain confined within the GaN quantum well. Carrier current generation in this 2-DEG active region is due to the quantum confinement of minority electrons rather than conventional tunneling phenomenon. Such quantum confinement is effectively functioning as the gate-control terminal as in conventional HEMTs. Introduction of quasi-AlGaN instead of alloy AlGaN, constitutes of alternate fine layers of AlN/GaN, results in carrier mobility doubling (800cm2/V-sec to 1600cm2/V-sec). A subtle interplay between bound and quasi-bound states is observed due to the quasi-AlGaN barrier. The study reveals a spectacular optical sensitivity with designed HEMATT oscillators. This for the first time opens the prospect of newly reported HEMATT oscillators in quantum sensing to cater the needs of ever growing, sophisticated defense and industrial applications.

Quantum 2020

A 2-terminal quasi-AlGaN/GaN/AlGaN HEMATT oscillator as quanta-image sensor for single-photon detection applications in defense industry

quasi-algan/gan

quantum confinement

2deg

[![](https://assets.underline.io/uploads/markdown_image/1/image/985c8a40b04e56675221c8549975de3c.png)](https://drive.google.com/file/d/1B70nPIeeeqdG4UU70NlYXuKVOHLRuJEo/view?usp=sharing)

### ** History of DRC**
The Device Research Conference (DRC) began in the pre-transistor era with the 1942 establishment of the Conference on Electron Device Research (CEDR). Following William Shockley’s 1948 CEDR presentation of the transistor device, the Solid-State Device Research Conference (SSDRC) was established, with invitation-only attendance.

In the ensuing decades, many exciting firsts were presented at SSDRC, including the use of impurity diffusion in silicon and germanium, the first practical MOSFET, and the first lattice-matched heterojunction.

In 1969, under the leadership or Herbert Kroemer and Cal Quate, the CEDR and SSDRC merged into DRC. In 1970, attendance was opened to all, and the first DRAM (dynamic random-access memory), room temperature lasers, and first CCD (charge-coupled device) were reported—all in the same 1970 DRC meeting!

1976 saw the first official coordination of tandem meetings between DRC and the Electronic Materials Conference (EMC) to bring together the electronic materials and device communities—a custom which persists to this day. In 1991, DRC began publishing its digest with IEEE; they can all be found [here on IEEE Xplore](https://ieeexplore.ieee.org/xpl/conhome/1000199/all-proceedings). Throughout this period, DRC featured reports of many novel and record-setting devices, including the HEMT (High Electron Mobility Transistor), VCSEL (Vertical Cavity Surface Emitting Laser), HBT (Heterojunction Bipolar Transistor), and nanoscale MOSFETs.

In recent years, DRC has continued to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an [article in the Journal of the Electron Device Society](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486). DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

Today, as we look forward to the next 75+ years of device innovation, DRC continues to lead the way in showcasing top-caliber research, facilitating vibrant discussion and debate and acting as a platform to nurture the next generation of device engineers. We welcome you to join us at the next DRC!

To learn more about DRC's history, please see [Aaron Franklin, Debdeep Jena and Deji Akinwande, "75 Years of the Device Research Conference—A History Worth Repeating," in IEEE Journal of the Electron Devices Society, vol. 6, pp. 116-120, 2018. doi: 10.1109/JEDS.2017.2780778](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486).

### **Topics**
* Biological Devices
* Devices for Extreme Conditions
* Heterogeneously Integrated Devices
* Memory Devices
* Modeling and Simulation of Devices
* Nanoscale and Vacuum Devices
* Optoelectronic and Optical Devices
* Other Emerging Devices
* Power Devices
* Quantum Devices
* RF and Terahertz Devices
* Spintronic and Magnetic Devices
* Thin-film Devices
* Wide-bandgap Devices
 
### **Invited Speakers**
* Patrick Fay, University of Notre Dame
* Susanne Hoffmann-Eifert, Peter Grünberg Institute
* Sanghyeon Kim, Korea Advanced Institute of Science and Technology
* Sriram Krishnamoorthy, University of California, Santa Barbara
* Mario Lanza, King Abdullah University of Science and Technology
* Xiuling Li, The University of Texas at Austin
* Marko Radosavljevic, Intel Corporation
* Siddharth Rajan, The Ohio State University
* Giordano Scappucci, Delft University of Technology
* Fisher Yu, University of Arkansas
* Wenjuan Zhu, University of Illinois at Urbana-Champaign




Registration is required to attend this event. If you have not already done so, please use the link below to register for a ticket to the conference:

https://www.mrs.org/drc-2022/registration

Registration Is Required

DRC 2022

DRC continues to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an article in the Journal of the Electron Device Society. 
DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

poster

The Institute of Physics and IOP Publishing, in partnership with the Chinese Physical Society (CPS) and the University of Science and Technology of China (USTC) are proud to have brought together the international quantum science community online for this inaugural conference.


Early career and leading researchers from universities, industry and government worldwide came together to share, learn and collaborate on the latest research and emerging areas of high interest across quantum science and technology. The broad themes covered by Quantum 2020 included:

Quantum communication;
Quantum computing and quantum simulation;
Quantum sensing, metrology and imaging;
Quantum information theory, software and algorithms;
Quantum foundations;
Quantum technology in industry.
The four-day event featured talks from world-renowned scientists, interactive poster sessions and two exciting panel discussions on the themes of Quantum Technology in Industry and Quantum Technology Programmes Around the World.


You will need to [register](https://www.iopconferences.org/iop/frontend/reg/tRegisterEmailNew.csp?pageID=978403&eventID=1552&tempPersonID=536224) to obtain a ticket. . If you have already registered you should have been sent an email from Underline (to the email address that you registered with) with the subject line ‘Welcome to Quantum 2020’. This email includes your ticket for the event. 

If you have a ticket and are experiencing problems in accessing the event, please contact us. 

The Institute of Physics and IOP Publishing, in partnership with the Chinese Physical Society (CPS) and the University of Science and Technology of China (USTC) are proud to have brought together the international quantum science community online for this inaugural conference.

Early career and leading researchers from universities, industry and government worldwide came together to share, learn and collaborate on the latest research and emerging areas of high interest across quantum science and technology. 

Entanglement plays a central role in quantum information processing and quantum physics. However, few effective ways are known to detect the amount of entanglement of an unknown quantum state. Here, we propose a scheme to estimate the entanglement negativity for any bipartition of a composite system. The proposed scheme is based on the random unitary evolution and local measurements on a single-copy quantum state, which is more practical compared with former methods based on collective measurements on many copies of the identical state. Meanwhile, we generalize the scheme to quantify the total correlation. We demonstrate the efficiency of the scheme with statistical analyses and numerical simulations. Our scheme is quite suitable for state-of-the-art quantum platforms, which can serve as a useful benchmarking tool to advance quantum technologies and a probe to study fundamental quantum physics like entanglement dynamics.

Single-Copies Estimation of Entanglement Negativity

Quantum antiferromagnet is of fundamental interest as it becomes a fertile ground for studying exotic many-body states including spin liquids and high-temperature superconductors. Compared with condensed matter systems, ultracold gases in optical lattices can be microscopically engineered and provide a unique opportunity for exploring bosonic magnetism and spin dynamics. Here, we report on the creation of a one-dimensional Heisenberg antiferromagnet with ultracold bosons. In a two-component Bose-Hubbard system, we switch the sign of the spin-exchange interaction and realize the isotropic antiferromagnetic Heisenberg model in an extended 70-site chain. Starting from a low-entropy N\'eel-ordered state, the bosonic antiferromagnet is approached via an optimized adiabatic passage. We probe the evolution of staggered magnetization and spin correlations of the system, revealing the coherent establishment of the antiferromagnetism. Furthermore, the characteristic spin-rotational symmetry of the state and its robustness against decoherence are verified. Our experiment demonstrates a novel way for generating many-body spin correlations and exploring exotic forms of magnetism.

Realization of a bosonic antiferromagnet

Continuous variable quantum key distribution (CV-QKD) has made great progress recent years. Throughput of error correction is one of the bottlenecks for CV-QKD. For typical distance of CV-QKD system, the signal-to-noise ratio is low, and a large number of iterations is needed for decoder. Since scheduling strategy is an important factor of the decoder’s convergence rate, in this paper, the performance of three different scheduling strategies (flooding scheduling, layered scheduling by row, layered scheduling by column) is compared. The algorithm complexity, adaptation to the parity check matrix, and throughput performance are studied. For the typical parity check matrix for CV-QKD system, the results show that layered scheduling by column is the best method. Throughput of more than 70 Mbits/s is achieved by this method, which surpasses the record in the literature and can improve the real-time processing capacity of CV-QKD system.

Study on error correction decoder scheduling strategies for continuous variable quantum key distribution system

"HqHop: Hybrid Quantum Hopfield Neural Network for Portfolio Selection

RP Mahajan 
 
Faculty at Dept. of Computer Science & Engineering, SIRT, SAGE University, India
E-mail: rpmahajan.sage@gmail.com ; rpmahajan@yahoo.com

 
Abstract: Classical Hopfield neural networks (CHNN) are known for solving portfolio selection problem for asset management. A Hybrid Quantum Hopfield Neural Network (HqHop) is proposed to solve portfolio selection problem based on Markowitz mean variance approach. Due to the large number of portfolios, the CHNN requires huge memory and processing power. The inbuilt parallelism in CHNN makes it more suitable for quantum based system. This paper details an approach, perhaps the first time, for the solution of portfolio selection problem using the involved concept. The developed HqHop can be used for solving other optimization problems as well.

"

Next from Quantum 2020

Single-Copies Estimation of Entanglement Negativity

Similar lecture

Impact of Corner Rounding on Quantum Confinement in GAA Nanosheet FETs for Advanced Technology Nodes

Stay up to date with the latest Underline news!

PRESENTATIONS

CONFERENCES

COMPANY

RESOURCES