Lecture image placeholder

Premium content

Access to this content requires a subscription. You must be a premium user to view this content.

Monthly subscription - $9.99Pay per view - $4.99Access through your institutionLogin with Underline account
Need help?
Contact us
Lecture placeholder background
VIDEO DOI: https://doi.org/10.48448/8chc-zd60

technical paper

IEEE WiPDA 2021

November 08, 2021

United States

Switching Behavior and Dynamic On-Resistance of Lateral β-Ga2O3 MOSFETs Up to 400 V

Please log in to leave a comment

Downloads

Transcript English (automatic)

Next from IEEE WiPDA 2021

Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET
technical paper

Comparison of Gate Oxide Lifetime Predictions with Charge-to-Breakdown Approach and Constant-Voltage TDDB on SiC Power MOSFET

IEEE WiPDA 2021

+4Shengnan Zhu
Shengnan Zhu and 6 other authors

08 November 2021

Similar lecture

RF GaN
tutorial

RF GaN

IEEE WiPDA 2021

07 November 2021

Stay up to date with the latest Underline news!

PRESENTATIONS

  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved