United States

Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages over their ferromagnetic analogs [1,2]; they produce no dipolar fields, making them stable at the nanometer scale in zero external magnetic field; they are robust against perturbation due to magnetic fields, which is beneficial for data retention; they exhibit zero net topological charge [1,3], thus eliminating the unwanted transverse velocity related to the skyrmion Hall effect, [4,5], thereby ensuring a straight skyrmion trajectory with enhanced mobility [1]. Here we show that skyrmions can be stabilized at zero field and room temperature in an IrMn thin film exchange-coupled to a ferromagnetic layer. A Ta/Cu/IrMn(5)/Pt(0.5)/Co(0.3)/NiFe(0.9)/Al (nm) stack was deposited by magnetron sputtering on a Si substrate and annealed at 250°C for 30 minutes under a perpendicular magnetic field to achieve exchange bias (see Fig.1a). Using the high-spatial-resolution magnetic microscopy technique X-PEEM, we observe that exchange bias allows the stabilization of magnetic skyrmions at zero field and room temperature in the Co/NiFe (see Fig.1b, Fe edge). X-PEEM image of the uncompensated Mn spin at the IrMn interface show that these skyrmions are replicated within the IrMn layer (see Fig1c, Mn edge). This result opens up a path for logic and memory devices based on skyrmion manipulation in antiferromagnets.References: [1] J. Barker et al., Phys Rev Lett 116, 147203 (2016). [2] O. Gomonay et al., Nat. Phys. 14, 213 (2018). [3] L. Šmejkal et al., Nat. Phys. 14, 242 (2018). [4] W. Jiang et al., Nat. Phys. 13, 162 (2017). [5] R. Juge et al., Phys Rev Appl. 12, 44007 (2019).

MMM 2020

Stabilisation of skyrmions in an antiferromagnet at room temperature using exchange bias

The 65th Annual Conference on Magnetism and Magnetic Materials (MMM 2020) was held in a virtual form. The COVID-19 pandemic, with its associated uncertainty about international travel and the ability to gather in large groups, meant that the Steering Committee decided to cancel the face-to-face meeting that had been planned in Palm Beach, Florida November 2-6, 2020.

We were reluctant to give up the benefits of meeting face-to-face, and know that shifting to a virtual conference is a significant change for this community. Nevertheless, we are first and foremost concerned about the health and safety of all our Conference participants and their loved ones on returning home after travelling.

The MMM 2020 Steering Committee was working exceptionally hard, along with our sponsors, the IEEE Magnetics Society and AIP Publishing, to make this event serve the needs of our participants, who live in time zones all around the globe, in the best possible way. 

You need a ticket to explore this event.

If you have already registered for MMM 2020, and you have already created an account, then you
just need to login (above).

If you have already registered for MMM 2020, but you have not yet created an account, then you
need to click on &quot;create an account&quot; (above) and then login.

Forgot your password? Go to
https://www.underline.io/log-in

If you have not yet registered for MMM 2020 but would like to do so, go to
https://magnetism.org/register

Still need help? Contact our team!


technical paper

A major obstacle to reliable and fast STT-induced switching is a counterintuitive phenomenon: the back-hopping (BH). We generally expect that the switching probability should always increase with the applied voltage. However the contrary can sometimes occur: in many instances, the MTJ resistance can back-hop to its original state after the apparent successful switching of the FL magnetization, as in the STT loop in Figure 1 at large positive voltage bias. We analyze the BH phenomenon in STT induced switching of perpendicularly magnetized tunnel junctions mimicking state-of-the art STTMRAM cells. The analysis is based on single-shot nanosecond time-resolved conductance measurements of the pulse-induced BH. The protocol allows to assign the conductance dynamics to the sole magnetization dynamics by avoiding the contributions from the bias dependence of the conductance and from current-induced heating. Studying several material variants reveals that the back-hopping is a feature of the nominally fixed system of the tunnel junction. This rules out earlier proposed scenarios based on the switching back of the free layer as a result of some anomalous voltage dependence of the STT acting on the free layer. The back-hopping is found (figure) to proceed by two sequential switching events that lead to a final state P' of conductance close to --but distinct from-- that of the conventional parallel state. The P' state does not exist at remanence. It generally relaxes to the conventional antiparallel state if the current is removed. The P' state involves a switching of the sole spin-polarizing part of the fixed layers, i.e. the barrier-facing part of the fixed layers. The analysis of our several material variants indicates that back-hopping occurs only when the spin-polarizing layer is too weakly coupled to the rest of the fixed system. This provides mitigation strategies of back-hopping for next generation STTMRAMs.References: T. Devolder et al, arXiv:2006.05108.

Back-hopping in Spin-Transfer-Torque switching of perpendicularly magnetized tunnel junctions

Magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy (PMA) have been studied in the recent decades as the crucial element for next generation memory applications [1]. As the data-storage layer in MTJs, the dual-MgO free layers (FLs) with a structure as MgO/CoFeB/spacer/CoFeB/MgO have been under intense development to provide high PMA and low damping after annealing, which guarantees the high thermal stability and low switching current in MTJ devices [2]. The previous efforts for the optimization of dual-MgO FLs include the engineering of non-magnetic spacer [3-5] and boron composition [6]. As a novel approach, we explore the impact of Fe80B20 inserted at both Co20Fe60B20/MgO interfaces of dual-MgO FLs under different annealing conditions in bottom-pinned MTJs. Current-in-plane tunnelling measurements are carried out to characterize magnetotransport properties of the MTJs. Conventional magnetometry measurements and ferromagnetic resonance are conducted to estimate the PMA and the Gilbert damping of dual-MgO FLs as a function of the Fe80B20 thickness and annealing temperatures. With ultrathin Fe80B20 (0.2 - 0.4 nm) inserted at the bottom interface, the tunnel magneto-resistance (TMR) can be maintained with a lower resistance-area (RA) product, while the top-FeB insertion results in a more RA drop with a similar TMR (Fig. 1(a)). The PMA of dual-MgO FLs with FeB inserted at the bottom interface shows a larger improvement than its top FeB insertion counterpart, even after 400 °C annealing (Fig. 1(b,c)). At the same time, the ultrathin FeB insertion at either interface reduces the damping constant in the FL (Fig. 1(d,e)). By optimizing the FeB insertion layer thickness and location, dual-MgO FLs with an unchanged TMR, higher effective anisotropy and lower damping can be achieved. This study demonstrates a novel approach to tune properties of dual-MgO FLs up to 400 °C annealing, which enables MTJ stacks for various applications.References: [1] Ikeda S, et al. 2010 Nat. Mater. 9 721–4 [2] Sato H, et al. 2014 Appl. Phys. Lett. 105 062403 [3] Liu T, et al. 2015 Sci. Rep. 4 5895 [4] Couet S, et al. 2016 IEEE Magn. Lett. 7 3103004 [5] Chatterjee J, et al. 2017 Appl. Phys. Lett. 110 202401 [6] Honjo H, et al. 2016 IEEE Trans. Magn. 52 1–4

Impact of Fe80B20 insertion on the properties of dual-MgO perpendicular magnetic tunnel junctions

Development of CoFeB/MgO based magnetic tunneling junction with perpendicular magnetic anisotropy (PMA) (p-MTJ) [1] has greatly contributed to realize the mass production of STT-MRAM. The higher thermal stability factor (△) is required for further scaling down of MTJ. In order to achieve high △, double and quad CoFeB/MgO interfaces p- MTJs have been proposed [2-4]. Single thin nonmagnetic layer (e.g., Ta, W, MgO, etc.) is inserted in the free layer to obtain high PMA (Stack A in Fig.1) [2]. In addition, enhancement of magnetic coupling (Jcpl) between free layer 1 and free layer 2 is also important to increase △, because △ does not increase when the magnets behave magnetically independently without Jcpl. Previous study showed an enhancement of PMA in double interface p-MTJ by inserting a thin ferromagnetic layer sandwiched by two nonmagnetic layers in the free layer [5] (we call as “ferromagnetic bridge layer (FBL)”). However, Jcpl for the free layer with FBL was not considered. In this study, we investigated Kefft* and Jcpl for the free layer with FBL in the double interface p-MTJ and simulated its impact on △. We prepared two types of stack with single insertion layer (Stack A) and FBL (Stack B). All stacks were deposited by DC/RF magnetron sputtering system, and then annealed at 400oC for 1h. Figures1-2 show experimental results of total insertion layer thickness (t) dependence of Jcpl and Kefft*. Stack B with FBL showed higher Kefft* than Stack A with single insertion layer in all t range, while keeping higher Jcpl when t was up to 0.5 nm because each insertion layer thickness is much thinner than single insertion layer. This could result in higher △ in Stack B with FBL because △ is proportional to Kefft* and effective free layer volume. Detailed simulation method and results will be presented. The FBL structure is an important technology to achieve high values both in Jcpl and Kefft*, which result in high △ for double and quad CoFeB/MgO interfaces MTJ. This work is supported by CIES’s Industrial Affiliation on STT MRAM program, CIES Consortium, JST-OPERA, and CAO-SIP.References: [1] S. Ikeda et al., Nat. Mater. 9, 721 (2010). [2] H. Sato et al., Appl. Phys. Lett. 101, 022414 (2012). [3] H. Honjo et al., Dig. Tech. Pap. Symp. VLSI Technology, 2015, T160. [4] K. Nishioka et at., IEEE Trans. Electron Devices 67, 995 (2020). [5] J. Chatterjee at al., Phys Rev. Appl 12, 044043 (2019). [6] G. D. Chaves-O’Flynn et al., Phys. Rev. Appl. 4, 024010 (2015).

Enhancement of magnetic interaction and magnetic anisotropy in MTJ with multiple CoFeB/MgO interfaces for high thermal stability

Magnetic random access memory (MRAM) devices are envisioned as a major candidate for future memory technologies. Using an exchange coupled composite free layer (ECC FL) for perpendicular magnetic tunnel junction can improve the operation as predicted by a two-spin model [1]. Here, we show that ECC FL leads to significant reduction of the switching current and increase of the efficiency defined as the ratio between the energy barrier and switching current for device sizes (20-50nm) when the magnetization dynamics can be non-uniform. The results are obtained via the micromagnetic simulations performed with the micromagnetic simulator FastMag [2]. Figure 1 shows the thermal stability factor Δ and switching current density Jc0 as a function of the surface exchange energy density Jex for different anisotropy ratios γ between the ECC sublayers (i.e. FLsoft and FLhard ). of the ECC FL. The thermal stability factor increases with Jex (Fig. 1a). The switching current density Jc0 has an optimal value of the Jex at which it is minimal (Fig. 1b). The reduction of Jc0 is greater for greater γ and it can be reduced more than half as compared to a regular FL. The corresponding efficiency exhibits the maximal improvement of over 1.65 as compared to a regular FL. The mechanism leading to these improvements is that the switching of the softer layer assists in the switching of the harder layer. It is important that the reference layer is next to the softer layer. We find that the devices of a smaller size need to have a significantly greater surface coupling strength to achieve optimal operation. Support from the Semiconductor Research Corporation is greatly acknowledged.References: [1] I. Yulaev, M. V. Lubarda, S. Mangin, V. Lomakin, E. E. Fullerton, APL 99 (13), 132502 (2011). [2] R. Chang, S. Li, M. V. Lubarda, B. Livshitz, and V. Lomakin, J Appl Phys 109 (3), 07D358 (2011).

Thermal stability and magnetization switching of exchanged coupled composite free layer of perpendicular magnetic tunnel junction

Non-destructive imaging for buried interfaces has been recently developed by decelerating electron-beam energy in scanning electron microscope (SEM) [1]. This imaging technique has proven to be very useful to identify the contaminations formed in a magnetic tunnel junctions (MTJs), which reduce their tunnelling magnetoresistance (TMR) ratios. For example, in a Heusler-alloy MTJ, residual resist has been found to react with Al during Al-O sputtering for the isolatation of the top and bottom electrodes. By reducing the Al-O sputtering power, the yield of the MTJs has been reported to be improved over 70% [2]. In order to further evaluate the resolution of this technique, we prepared a new set of samples with elevating capping layers in this study. The samples, consisting of Ta (5)/(Ru (5)/)W or Pt (0.5)/Ta (5~60) (thickness in nm), were deposited on Si substrates using a high target utilisation sputtering system. Here, the heavy metal layer of W or Pt were intrinsically dispersed as nano-particles. Their diameters were evaluated by imaging with the non-destructive technique, confirming the resolution. The penetration depth of the electron beam in SEM with different energy was estimated using CASINO programme [3]. The electron beam at 4.7 keV is found to reach the interface between Pt and Ta for the case of the 60 nm thick Ta capping layer and to generate back scattered electrons (BSE). The electron beam at 5.0 keV, on the other hand, is found to reach the bottom Pt (or W) interface and to generate BSE. By subtracting these images, the distribution of the Pt nano-particles can be assessed. The corresponding SEM image taken by the subtraction of these acceleration voltages can resolve the Pt nano-particles with 10 nm diameter. For the case of the 5 nm thick Ta capping layer, 2 nm resolution is achieved. Such resolution can be useful for the evaluation of buried MTJs with a few 10 nm diameter. We will further improve the resolution by optimising the imaging conditions, so that we will be able to image smaller MTJs. This work is partially supported by EPSRC-JSPS Core-to-Core programme (EP/M02458X/1) and JST CREST (JPMJCR17J5).References: [1] A. Hirohata et al., Nat. Commun. 7, 12701 (2016). [2] E. Jackson et al., Sci. Rep. 8, 7585 (2018). [3] D. Drouin et al., Scanning 29, 92 (2007).

Resolution of Non-Destructive Imaging for Buried Interfaces

It is a matter of debate whether a pillar or a stepped structure better retains magnetic tunnel junctions’ (MTJs) performance while scaling down. In this work we use micromagnetic simulation to model the scaling effects on the free-layer’s stray-field (Hstray) for the two MTJ structures. The model was built on an MTJ containing a synthetic ferromagnetic (SyF) layer (free-layer/MgO/reference-layer) and a synthetic antiferromagnetic (SyAF) layer (reference-layer/Ru/hard-layer). Approximate Hstray strength is obtained in both structures with a free-layer of ~ 100nm. However, upon size reduction the Hstray raises significantly in the pillar structure, but it appears less responsive in the stepped structure. This trend is shared by experimental results with the MTJ reduced from 130 to 80 nm. We are suggested that the stepped structure is a more promising candidate on mitigating Hstray in pursuit of high density MRAM [1]. The combined effects of Hstray and Dzyaloshinskii–Moriya interaction (DMI) on switching current density (Jc) were also calculated for a 30 nm free-layer MTJ. The in-plane Hstray appears to interact with the DMI in a complementary or a competing manner, depending on the sign of the DMI and initial switching state (parallel or antiparallel) of the MTJ. The stepped structure is able to reduce Jc more effectively than the pillar case. This is due to strong mediation from the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction of the SyAF layer in the stepped structure.References: [1]. S. Bandiera, S. Bandiera, R. C. Sousa, et al., IEEE Magn. Lett. 1, 3000204 (2010).

Combined Effects of Stray Field and Dzyaloshinskii–Moriya interaction on Magnetic Tunnel Junction with Stepped and Pillar Structures

Surface acoustic wave (SAW) can induce ferromagnetic resonance (FMR) [1] in the magnetostrictive soft layer of a magnetic tunnel junction (MTJ) that can be leveraged for magnetization reversal with reduced STT current [2]. However, in realistic scenarios, the MTJ soft layer can have inhomogeneity in its lateral anisotropy due to the intrinsic anisotropy variation, edge modification, roughness and thickness variation [3]. Consequently, different regions of magnetizations precess non-uniformly under the excitation of SAW and this incoherent precession become more prominent in the presence of thermal noise (see Fig.1 for 1 ns and 0.92 ns snapshots at T=0 K and T=300 K respectively for inhomogeneous anisotropy distribution). Such incoherency is detrimental as it can reduce the net magnetization deflection to a much lower value and thereby prove ineffective in reducing the STT current needed to switch the magnetization. Remarkably, magnetization precessions in different regions are found to be in phase even though they are precessing in non-uniform cones and the resulting high net magnetization deflection contributes to decrease the STT current required for magnetization reversal. In addition, such magnetization reversal is attained with SAW induced stress amplitude that is much lower than the total anisotropic barrier. This work points to the energy efficiency of the SAW assisted STT scheme and the potential for scalability below lateral dimension ~ 50 nm, which is technologically significant for STT-RAM application. It also shows the robustness of the scheme in realistic scenarios with thermal noise and material inhomogeneity. Finally, we will present some experimental results to demonstrate the effect of ferromagnetic resonance on ~ 100 nm magnetostrictive nanomagnets driven to FMR by SAW where the lateral anisotropy variation would be inherently present due to lithography and fabrication imperfection. ACKNOWLEDGEMENT: NSF SHF grant 1815033 and VMEC Seed grant.References: [1]. M. Weiler, L. Dreher and C. Heeg, Phys. Rev. Lett. Vol. 106, p. 117601 (2011) [2]. A. Roe, D. Bhattacharya and J. Atulasimha, Appl. Phys. Lett. Vol. 115, p. 112405 (2019) [3]. W. A. Misba, M. M. Rajib and D. Bhattacharya, arXiv:2003.12903 (2020)

Investigation of Acoustic Wave Induced FMR Assisted Spin Toque Switching of MTJs with Lateral Anisotropy Variation

Magnetization switching of magnetic tunnel junctions (MTJs) via spin-orbit torque (SOT) is gaining interest in cache memory applications due to its benefits in lowering power consumption. Although SOT switching of perpendicular MTJs offers better scalability, in practice the requirement of an external magnetic field to assist SOT switching is a fundamental bottleneck. Meanwhile, in-plane (IP) MTJs, fabricated in the form of an ellipse, have been demonstrated to switch by SOT without an external field. Here, the easy axis of the elliptical MTJ is perpendicular to the charge flow in the spin-hall channel, and the magnetization trajectory is argued to undergo several precessions before magnetization flip similar to spin-transfer torque switching. [1] However, in this work we experimentally show that these IP-SOT MTJs, can in fact switch as fast as 400 ps, shorter than the precessional trajectory. The IP MTJs, which implements Pt/CoFeB/MgO as the free layer, are fabricated on a 200 mm wafer using stepper lithography and ion-beam etching. Interestingly, by applying asymmetric SOT pulse segments at substantially small voltage steps, we found that a significant number of MTJs demonstrated multilevel resistance states. While multilevel states have been reported in antiferromagnet/ferromagnet structures, the underlying mechanism arising from variation in exchange bias is not applicable in our case. [2] Using micromagnetic simulations, we formulate that the existence of meta-stable domain states inside the MTJ free-layer is a likely explanation in our case. In addition, we also probe the role of CoFeB thickness, aspect ratio, and switching probabilities of these devices. Multilevel resistance states in SOT devices could find potential in neuromorphic circuits.References: [1] S. Fukami et.al. Nat. Nanotechnol. 11, 621 (2016). [2] A. Kurenkov et.al. Appl. Phys. Lett. 110, 092410 (2017).

Multilevel magnetization switching of magnetic tunnel junctions induced by spin-orbit torque

Applying electric field to control magnetic properties would be a very convenient and energy-efficient way for spintronics devices. However, the control of magnetic characteristics by electric fields is not straightforward, due to the time-reversal symmetry of magnetism versus spatial inversion symmetry of electricity. Such fundamental difficulty makes it challenging to modify the topology of magnetic skyrmionic states with electric field. Here, we propose a novel mechanism that realizes the electric-field (E) switching of magnetic topological charge (Q) in a controllable and reversible fashion, through the mediation of electric polarization (P) and Dzyaloshinskii-Moriya interaction (D). Such mechanism is coined here EPDQ. Its validity is demonstrated in a multiferroic VOI2 monolayer, which is predicted to host magnetic bimerons. The change in magnetic anisotropy is found to play a crucial role in realizing EPDQ process and its microscopic origin is discussed. Our study thus provides a new approach toward the highly-desired electric-field control of magnetism.

Electric-Field Switching of Magnetic Topological Charge in Type-I Multiferroics

Magnetic skyrmions have attracted enormous research interest since their discovery a decade ago. Especially the non-trivial real-space topology of these nano-whirls leads to fundamentally interesting and technologically relevant effects – the skyrmion Hall effect of the texture and the topological Hall effect of the electrons. Furthermore, it grants skyrmions in a ferromagnetic surrounding great stability even at small sizes, making skyrmions aspirants to become the carriers of information in the future. Still, the utilization of skyrmions in spintronic devices has not been achieved yet, among others, due to shortcomings in their current-driven motion. In this talk, we present recent trends in the field of topological spin textures that go beyond skyrmions [1]. The majority of these objects can be considered the combination of multiple skyrmions or the skyrmion analogues in different magnetic surroundings, as well as three-dimensional generalizations. We classify the alternative magnetic quasiparticles – some of them observed experimentally, others theoretical predictions – and present the most relevant and auspicious advantages of this emerging field. A special focus is on magnetic antiskyrmions [2], bimerons [3], antiferromagnetic skyrmions [4] and hopfions [5]. These objects (shown in Fig. 1) exhibit advantageous emergent electrodynamic effects compared to skyrmions, either due to their lower symmetry or due to a compensated topological charge.References: [1] B. Göbel, I. Mertig, O. Tretiakov “Beyond skyrmions: Review and perspectives of alternative magnetic quasiparticles” arXiv preprint: 2005.01390 [2] J. Jena*, B. Göbel*, T. Ma, V. Kumar, R. Saha, I. Mertig, C. Felser, S. Parkin. “Elliptical Bloch skyrmion chiral twins in an antiskyrmion system” Nature Communications 11, 1115 (2020). [3] B. Göbel, A. Mook, J. Henk, I. Mertig, O. Tretiakov. “Magnetic bimerons as skyrmion analogues in in-plane magnets” Phys. Rev. B. 99, 060407(R) (2019). [4] B. Göbel, A. Mook, J. Henk, I. Mertig, “Antiferromagnetic skyrmion crystals: Generation, topological Hall, and topological spin Hall effect” Phys. Rev. B. 96, 060406(R) (2017). [5] B. Göbel, C. Akosa, G. Tatara, I. Mertig. “Topological Hall signatures of magnetic hopfions” Phys. Rev. Research 2, 013315 (2020).

Premium content

Stabilisation of skyrmions in an antiferromagnet at room temperature using exchange bias

Downloads

Next from MMM 2020

Back-hopping in Spin-Transfer-Torque switching of perpendicularly magnetized tunnel junctions

Similar lecture

Ultrafast Domain Wall Dynamics in Metallic and Insulating Ferrimagnets INVITED

Stay up to date with the latest Underline news!

PRESENTATIONS

CONFERENCES

COMPANY

RESOURCES