Italy

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9145.pdf

**Abstract:**

Low-temperature, low-resistive and gold-free Ta/Al-based ohmic contacts fabricated by sputtering on AlGaN/GaN-heterostructures are demonstrated on 150mm GaN-on-Si substrates using Ta/Al/TaN stacks annealed at 550°C, being suitable for integration of GaN-based devices in Si-platforms. The low-temperature annealing improves the sheet resistance thermal stability of heterostructures without passivation. Moreover, the weaker increase with temperature of the contact resistance given by the 2DEG-semiconductor-metal connection governed by tunneling for Au-free Ta/Al-based contacts, rather than the stronger temperature increase of the contact resistance given by the direct metal-2DEG connection for Au-containing Ti/Al-based contacts, results beneficial for HEMTs operating at high-temperature by reducing the on-resistance degradation.

ESSCIRC ESSDERC 2021

Integration and Reliability Aspects of Low-Temperature and Au-Free Ta/Al-Based Ohmic Contacts for AlGaN/GaN MIS-HEMTs

tantalum/aluminum/tantalumnitride

low-temperature annealing

gold-free

ohmic contacts

gan-on-si

algan/gan heterostructures

high electron mobility transistors

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**


To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





technical paper

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9172.pdf

**Abstract:**

This paper presents a real-time output 50-GS/s 8-bit time-interleaved (TI) analog-to-digital converter (ADC) with dedicated calibration techniques and deterministic latency, where the full-speed converted data are output by 16-lanes transmitters. gain, offset and time-skew calibration optimize the ADC\'s performance. Fabricated in a 40-nm CMOS process, the prototype ADC achieves an outstanding SNDR of 36.80 dB at 50 GS/s with a 19.123-GHz input. respectively. The ADC core occupies an area of 1.232 mm2 and consumes 894 mW.

A Real-Time Output 50-GS/s 8-Bit TI-ADC with Dedicated Calibration Techniques and Deterministic Latency

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9115.pdf

**Abstract:**

This paper presents a 6GS/s 0.5GHz bandwidth CT 2-1-1 MASH 3b ΔΣ modulator in 40nm CMOS. To enable the 0.5GHz bandwidth, the modulator employs current-mode excess loop delay compensation with phase boosting, current-mode locally-time-interleaved quantizers, and on-chip comparator offset calibration to realize high-speed ELD-compensated 3-bit quantizers. High sampling frequency, multi-bit quantization and multi-stage noise-shaping enable the ADC to achieve 58dB DR in 500MHz BW when sampled at 6GHz. If sampled at 4GHz, 65dB DR can be achieved at a BW of 300MHz.

A 6GS/s 0.5GHz BW Continuous-Time 2-1-1 MASH ΔΣ Modulator with Phase-Boosted Current-Mode ELD Compensation in 40nm CMOS

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9308.pdf

**Abstract:**

This paper reports the first silicon-verified current-steering DAC using enhanced constant-switching-activity data-weighted-averaging (CSA-DWA). It achieves data-independent constant switching activities for all the input codes by exploiting redundant switching elements. In addition, a power supply network optimization is presented to meet the increased timing-match requirement due to the adopted extra switching elements. Without calibration, the fabricated 16-bit 4GS/s DAC in 65nm CMOS achieves >70dBc spurious-free dynamic range (SFDR) and <-80dBc third-order intermodulation distortion (IM3) up to 1GHz, showing 4-15dB SFDR and 5-14dB IM3 improvement across the Nyquist band.

A 16-Bit 4.0-GS/s Calibration-Free 65nm DAC with >70dBc SFDR and <-80dBc IM3 Up to 1GHz Using Constant-Activity Element Switching

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9199821

**Abstract:**

A triple-mode RF system on a chip (SoC) is reported which supports cellular Internet of Things (IoT) standards eMTC, NB-IoT, and EC-GSM, as well as 2G fallback. In the eMTC mode, the SoC achieves best-in-class performance for reference sensitivity (-112.3 dBm), coverage extension mode A (-128.5 dBm) and B (-136.8 dBm), respectively. A very efficient RTC, combined with dynamic power management of unused clocks and idle blocks, also leads to excellent performance in cellular IoT power-saving modes, such as extended discontinuous reception and power-saving mode.

A Triple-Mode Cellular IoT SoC Achieving −136.8-dBm eMTC Sensitivity

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9145702

**Abstract:**

This work presents a true random number generator (TRNG) based on a stochastic delta-sigma modulator (DSM) with ring oscillator (RO) integrators. The TRNG leverages noise and jitter in the ROs as an entropy source. A multi-bit non-return to- zero (NRZ) digital-to-analog converter (DAC) in the feedback path ensures DSM noise dominates input swing seen by the frontend integrators. Hence, the DSM can concurrently operate as an ADC and TRNG. A 65nm prototype achieves Shannon entropy > 0.999998 with lower-bound min-entropy > 0.995 at 52Mbps throughput while passing all NIST tests across multiple chips and voltage/temperature corners without needing calibration. The combined power consumption of ADC and TRNG is 0.36mW which is the lowest among state-of-the-art RO TRNGs. Low power consumption, high entropy, and concurrent operation of the TRNG as an ADC are principal contributions of this work.

0.36mW, 52Mbps True Random Number Generator Based on a Stochastic Delta-Sigma Modulator

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9195478

**Abstract:**

An all-digital flexible precision in-memory accelerator for vector matrix multiplication (VMM) is demonstrated in 65 nm CMOS. The design supports flexible precision, floating point, and complex numbers enabling in-memory radio-frequency machine learning and signal processing computation. The measured compute efficiency normalized to memory size is 34 GOPS/W/KB.

A Flexible Precision Multi-Format In-Memory Vector Matrix Multiplication Engine in 65 nm CMOS with RF Machine Learning Support

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9145614

**Abstract:**

This paper presents a widely tunable digital delay element suitable for low-power low-frequency continuous-time digital signal processing systems. The design uses features of the 28 nm FD-SOI CMOS technology to precisely control currents in the pA range and significantly reduce leakage power. The measured tuning range is significantly larger than prior art covering more than 3 decades from 30 ns to 100 µs making it suitable for CT-DSP low frequency filters. At 0.7 V supply voltage, the dynamic power consumption is 15 fJ/event with a residual power consumption due to leakage of 14 pW.

A Wide Tuning Range Delay Element for Event-Driven Processing of Low-Frequency Signals in 28-nm FD-SOI CMOS

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9033.pdf

**Abstract:**

Accurate split-CV mobility measurements require to overcome Bias Temperature Instabilities (BTI) which are a key issue in GaN-on-Si MOS-channel HEMTs. In this article, a rigorous methodology to extract the split-CV mobility as a function of the electron density and the temperature at Al2O3/GaN interface is depicted. Drain current ID(VG) and gate-to-channel capacitance CGC(VG) measurements are performed simultaneously under fast gate voltage ramp to prevent BTI. The voltage ramp enables fast CGC(VG) measurements and allows to bypass the frequency effect which can be observed when using small signal capacitance measurements. Thus, this technique paves the way to a reliable determination of intrinsic electron transport properties of GaN transistors.

Reliable Method for Low Field Temperature Dependent Mobility Extraction at Al2O3/GaN Interface

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9121.pdf

**Abstract:**

Gate-to-channel coupling capacitance behavior on GaN-HEMT with recessed MIS-Gate was analyzed combining experimental data and 2D-simulations. A new protocol to discriminate the contribution of the active channel and of the different coupling parasitic capacitances on a C-V curve of a GaN MIS-HEMT is proposed. It also enables the evaluation of the respective contributions of all parasitic components such as passivation layer and gate field plate capacitances in the parasitic capacitance of GaN HEMT devices.

Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9039.pdf

**Abstract:**

The reduction of substrate RF losses and non-linearities is key to enable high-performance GaN-on-Si HEMT based RF front-end modules. In this paper, the impact of the epitaxial III-N buffer layers on substrate RF losses and harmonic distortion is studied experimentally using coplanar waveguide (CPW) structures. In contrast to a SiO2/Si stack, a strong hysteresis in the RF losses (quantified using effective resistivity) of the HEMT stack is observed when the chuck DC bias is swept. A comparative analysis of various material stacks suggests that the hysteresis originates from the large time constants (much larger than 1 s) associated with the traps in the III-N layers. Harmonic distortion, on the other hand, shows much weaker hysteresis effect than effective resistivity during chuck bias sweeps.

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Next from ESSCIRC ESSDERC 2021

A Real-Time Output 50-GS/s 8-Bit TI-ADC with Dedicated Calibration Techniques and Deterministic Latency

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Mechanical Band Gap Formation in Anisotropic CMOS Back-End-of-Line Stacks for Monolithic High-Q MEMS Resonator Confinement

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PRESENTATIONS

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COMPANY

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