Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS Substrate

September 14, 2021 • Italy

doi: 10.48448/znhg-4z83

Hans Herdian-avatar-image
SPEAKER

Hans Herdian

Tokyo Institute of Technology
Takuichi Hirano-avatar-image
SPEAKER

Takuichi Hirano

Tokyo City University
Takeshi Inoue-avatar-image
SPEAKER

Takeshi Inoue

SHI-ATEX Co., Ltd.
Kenichi Okada-avatar-image
SPEAKER

Kenichi Okada

Tokyo Institute of Technology
Atsushi Shirane-avatar-image
SPEAKER

Atsushi Shirane

Tokyo Institute of Technology
Masatsugu Sogabe-avatar-image
SPEAKER

Masatsugu Sogabe

SHI-ATEX Co., Ltd.
aboutabstractauthors

Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS Substrate

September 14, 2021 • Italy

doi: 10.48448/znhg-4z83

Hans Herdian-avatar-image
SPEAKER

Hans Herdian

Tokyo Institute of Technology
Takuichi Hirano-avatar-image
SPEAKER

Takuichi Hirano

Tokyo City University
Takeshi Inoue-avatar-image
SPEAKER

Takeshi Inoue

SHI-ATEX Co., Ltd.
Kenichi Okada-avatar-image
SPEAKER

Kenichi Okada

Tokyo Institute of Technology
Atsushi Shirane-avatar-image
SPEAKER

Atsushi Shirane

Tokyo Institute of Technology
Masatsugu Sogabe-avatar-image
SPEAKER

Masatsugu Sogabe

SHI-ATEX Co., Ltd.

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