United States

Device scaling has been a critical topic of nonvolatile memory for high integration density, low operation voltage and high device speed. However, HfO2-based metal-ferroelectric-semiconductor field-effect-transistor (MFSFET) has an issue of gate leakage current when the ferroelectric HfO2 film thickness is reduced less than 10 nm. 
In this research, we realized the MFSFET with 5 nm thick ferroelectric nondoped HfO2 gate insulator for the first time by decreasing the sputtering power of Pt gate electrode deposition.


DRC 2021

MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator

nondoped hfo2

mfsfet

the next-generation nonvolatile memory

ferroelectric hfo2

[![](https://assets.underline.io/uploads/markdown_image/1/image/985c8a40b04e56675221c8549975de3c.png)](https://drive.google.com/file/d/1B70nPIeeeqdG4UU70NlYXuKVOHLRuJEo/view?usp=sharing)

### ** History of DRC**
The Device Research Conference (DRC) began in the pre-transistor era with the 1942 establishment of the Conference on Electron Device Research (CEDR). Following William Shockley’s 1948 CEDR presentation of the transistor device, the Solid-State Device Research Conference (SSDRC) was established, with invitation-only attendance.

In the ensuing decades, many exciting firsts were presented at SSDRC, including the use of impurity diffusion in silicon and germanium, the first practical MOSFET, and the first lattice-matched heterojunction.

In 1969, under the leadership or Herbert Kroemer and Cal Quate, the CEDR and SSDRC merged into DRC. In 1970, attendance was opened to all, and the first DRAM (dynamic random-access memory), room temperature lasers, and first CCD (charge-coupled device) were reported—all in the same 1970 DRC meeting!

1976 saw the first official coordination of tandem meetings between DRC and the Electronic Materials Conference (EMC) to bring together the electronic materials and device communities—a custom which persists to this day. In 1991, DRC began publishing its digest with IEEE; they can all be found [here on IEEE Xplore](https://ieeexplore.ieee.org/xpl/conhome/1000199/all-proceedings). Throughout this period, DRC featured reports of many novel and record-setting devices, including the HEMT (High Electron Mobility Transistor), VCSEL (Vertical Cavity Surface Emitting Laser), HBT (Heterojunction Bipolar Transistor), and nanoscale MOSFETs.

In recent years, DRC has continued to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an [article in the Journal of the Electron Device Society](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486). DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

Today, as we look forward to the next 75+ years of device innovation, DRC continues to lead the way in showcasing top-caliber research, facilitating vibrant discussion and debate and acting as a platform to nurture the next generation of device engineers. We welcome you to join us at the next DRC!

To learn more about DRC's history, please see [Aaron Franklin, Debdeep Jena and Deji Akinwande, "75 Years of the Device Research Conference—A History Worth Repeating," in IEEE Journal of the Electron Devices Society, vol. 6, pp. 116-120, 2018. doi: 10.1109/JEDS.2017.2780778](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486).

### **Topics**
* Biological Devices
* Devices for Extreme Conditions
* Heterogeneously Integrated Devices
* Memory Devices
* Modeling and Simulation of Devices
* Nanoscale and Vacuum Devices
* Optoelectronic and Optical Devices
* Other Emerging Devices
* Power Devices
* Quantum Devices
* RF and Terahertz Devices
* Spintronic and Magnetic Devices
* Thin-film Devices
* Wide-bandgap Devices
 
### **Invited Speakers**
* Patrick Fay, University of Notre Dame
* Susanne Hoffmann-Eifert, Peter Grünberg Institute
* Sanghyeon Kim, Korea Advanced Institute of Science and Technology
* Sriram Krishnamoorthy, University of California, Santa Barbara
* Mario Lanza, King Abdullah University of Science and Technology
* Xiuling Li, The University of Texas at Austin
* Marko Radosavljevic, Intel Corporation
* Siddharth Rajan, The Ohio State University
* Giordano Scappucci, Delft University of Technology
* Fisher Yu, University of Arkansas
* Wenjuan Zhu, University of Illinois at Urbana-Champaign




Registration is required to attend this event. If you have not already done so, please use the link below to register for a ticket to the conference:

https://www.mrs.org/drc-2022/registration

Registration Is Required

DRC 2022

DRC continues to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an article in the Journal of the Electron Device Society. 
DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

technical paper


**[DOWNLOAD THE DRC 2021 DIGEST](https://drive.google.com/file/d/17_-pkYf4IBbVuNYgohTf0iZJORVGp_uN/view?usp=sharing)**

**[DOWNLOAD A COPY OF THE FINAL DRC PROGRAM](https://drive.google.com/file/d/1Ek8UIDCowpLq0z2hXav5tn67FboxS03N/view?usp=sharing)**

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

Given the ongoing global health concerns associated with COVID-19 (Coronavirus), the DRC leadership has decided to hold the 2021 Device Research Conference in a virtual (online) format. This follows an enormously successful 2020 DRC held virtually, in which we had record attendance and worldwide participation of more than 875 attendees from 33 countries.

The 2021 Conference will feature:

* Informative, timely short courses in rapidly developing fields
* Oral and poster presentations on electronic/photonic device experiments and simulations
* Plenary and invited presentations given by worldwide leaders
* Evening “rump” session
* Strong student participation and Student Paper Awards

DRC is held in coordination with the Electronic Materials Conference (EMC), which will occur the same week, from June 23-25. As has happened in person in past years, in 2021, the virtual DRC and EMC sessions on the shared day, Wednesday, June 23, will be open to all attendees from both conferences. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchanges of information between attendees of both Conferences. For information on the 63rd Electronic Materials Conference, please visit the [EMC 2021 website.](https://www.mrs.org/63rd-emc/)

2021 DRC individual presentation videos will become available in Underline at the end of each technical session. A recording of each full live session with Q&A will be posted later during the conference. To facilitate re-viewing of recorded talks and sessions, the DRC Underline site will remain open through 11:59pm (US EDT) on July 7th. DRC Conference registration will remain open at www.mrs.org/drc-2021/registration through June 30th.

Thank you for joining us at the 2021 Device Research Conference!

**General Chair**
<br>Zhihong Chen, Purdue University

**Technical Program Chair**
<br>Becky (R.L.) Peterson, University of Michigan

**Technical Program Vice-Chair**
<br>Gregg Jessen, BAE Systems

You can register for the 79th Device Research Conference with the following link. https://www.mrs.org/drc-2021

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

Recently, low-power analog switches have been enjoying rapidly growing interest owing to their proliferation in mobile and reconfigurable communication and connectivity systems often with multiple-input-multiple-output architecture. To develop this ideal switch, non-volatile switches based on memory devices have been investigated with the potential of zero static power dissipation. Here, we report the first single-pole-double-throw (SPDT) non-volatile RF switches based on monolayer MoS2.

Single-Pole-Double-Throw RF switches based on monolayer MoS2

We utilize analog and non-volatile resistive memory devices to construct in-memory computing platforms offering lower power and increased speed. Integration of oxide-based devices with CMOS has been performed in back-end processing, showing analog tunability of the memory elements. We demonstrate acceleration of deep learning neural networks, optimization, finite automata models and tree-based machine learning. We show the potential for significant improvement over CPUs, GPUs, and custom ASICs using these in-memory and analog systems.

In-memory computing with non-volatile analog memories for machine learning applications

"Amorphous GaOx back-gated TFTs with Al2O3 dielectric are demonstrated. Both the channel and dielectric are grown by ALD. The TFTs exhibit high Ion/Ioff (1e6) and low sub-threshold slope (138 mV/dec).

Vt variation with forward and reverse Vg sweeps, with repeated runs, and with channel length and thickness is observed. Encapsulating the channel with in-situ ALD Al2O3 improves the Vt shift.

This is the first demonstration of ALD a-GaOx TFT, aimed towards 3D BEOL integration for More-than-Moore applications.

AAmorphous ALD-grown GaOx TFT for BEOL integration

thin-film transistor, indium oxide, indium zinc oxide, high-k, semiconductor modeling

Mobility Boost in Transparent Oxide Semiconductors with High-κ Gated TFTs

Antiferromagnets, Spin torque, LLG, Terahertz gap, spintronics

Terahertz auto oscillations in non-collinear coplanar metallic antiferromagnets

Electrical isolation of read and write paths, exchange coupling, perpendicular magnetic anisotropy, spintronic device, compute-in-memory, neuromorphic application

Exchange-Coupling-Enabled Electrical-Isolation of Compute and Programming Paths in Valley-Spin Hall Effect based Spintronic Device for Neuromorphic Applications

Ultra-low loss; Silicon nitride waveguide

MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator

Downloads

Next from DRC 2021

Single-Pole-Double-Throw RF switches based on monolayer MoS2

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Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation

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MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator

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Next from DRC 2021

Single-Pole-Double-Throw RF switches based on monolayer MoS2

Similar lecture

Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation

Stay up to date with the latest Underline news!

PRESENTATIONS

CONFERENCES

COMPANY

RESOURCES

Downloads