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This article provide a method about controlled exfoliation of 2D Bi2Se3 via nano-imprint. which could improve the yield and electrical performance. 2D Bi2Se3 with improved performance holds great promise for innovative photoelectric and thermoelectric applications.

EIPBN 2021

Exfoliation of Two-dimensional Bismuth Selenide Based on Nanoimprint Lithography

exfoliation

nano-imprint

two-dimensional bi2se3

The Electronic Materials Conference (EMC) is the premier annual forum on the preparation, characterization and use of electronic materials. This year’s event will feature a plenary session, topical sessions, a poster session and more.

EMC is coordinated with the Device Research Conference (DRC), which will be held during the same week, from June 20-23. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchange of information between attendees of both Conferences.

![](https://assets.underline.io/uploads/markdown_image/1/image/eb26c24a18d5d1030616afa4f993cf89.png)
	
<a href="https://www.mrs.org/docs/default-source/meetings-events/mrs-conference-services/2021/emc-2021/2021-emc-program-at-a-glance-6-16-21.pdf?sfvrsn=e39f950c_4">Latest Program-at-a-Glance</a>

<a href="https://drive.google.com/file/d/1eiS1ao4p83VNy8xgHs3Rls7gTQjx7Rc4/view?usp=sharing">Full Program with Abstracts</a>

EMC 2021

poster

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

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We introduce a UV greyscale lithography process combining large surface patterning with a high vertical resolution. To reach a low contrast curve slope, we studied the annealing processes Soft Bake and Post Exposure Bake. We also achieve a 50nm Si steps within our presented plasma etching process.

Optimized UV grayscale process for high vertical resolution applied to spectral imagers

We  optimized the built-in lens mask (BILM) which was shown to be able to form a three-dimensional image in a single exposure by using its multiple focus function, in order to creat the ideal target shape.

Optimization of the Built-in Lens Mask for Three-Dimensional Photo Lithography

The goal of this work is to build compartmentalized microelectrode arrays to assess the impact of conditioned cell culture media exchange between two initially isolated neuronal networks. The fabrication of biocompatible dual-chamber microelectrode arrays is presented, including the manufacturing and attachment of resin rings with controllable openings for fluid exchange.

A dual-chamber microelectrode array to facilitate neuronal network communication

Width/depth and shape of volume of resist modified by ion beam as function of ion energy, exposure time and ion mass (He, Ne, Ar, Ga, Kr, Xe и Rn) is investigated by Monte-Carlo simulation. Sub-10nm resolution is found and confirmed. Analytical interpolating expressions for arbitrary ion mass, energy are submitted

 Ion beam lithography: resist modification volume determination and sub-10nm resolution prediction via simulation

In spite of M-C simulation shows strong dependence proximity function on depth (3D-PF)  it is possible to find effective α, β, η parameters for two-dimensional PF using original algorithm which considers development. Good agreement with experimental data is demonstrated thus proximity parameters now can be calculated for arbitrary layered material

PRESENTATION OF PROXIMITY FUNCTION BY THREE PARAMETERS , , BASED ON MONTE CARLO METHOD AND COMPARISON WITH EXPERIMENT

PMMA exposure sensitivity to both electrons and gallium ions at identical conditions was measured. It was found that a positive sensitivity to gallium ions is 1000 times higher than to electrons, all at the same conditions. Original procedure allowed to measure ion contrast (~3) for highly nonuniform in depth exposure

 Ion beam lithography: sensitivity/contrast in IBL vs EBL.

Our group used cellphone CMOS camera module, based on OV5648-BSI image sensor, to image 200keV electron beam in Transmission Electron Microscope and 30keV ion beam in Helium Ion Microscope.

Cellphone CMOS Camera Module for Imaging with Charged Particle Beams.

This work presents an improvement in the chemical and mechanical stability of a nanofluidic device formed in poly(ethylene glycol) diacrylate (PEGDA), a PEGbased UV resin for UV-NIL, by adding a cross-linking agent.

Surface Charge Density of Nanofluidic Devices with TMPTA UV Resins of Different Cross-Linking Agent Concentration Fabricated by UV Nanoimprint Lithography

High fidelity 2D and 3D micro and nanometer structures are facilitated by a number of fabrication methods which employ numerous concepts of lithographic patterning. In our contribution we seek to review our material innovations for scientific work where emerging nanofabrication is employed as well advanced production with industrial relevance.

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Exfoliation of Two-dimensional Bismuth Selenide Based on Nanoimprint Lithography

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Optimized UV grayscale process for high vertical resolution applied to spectral imagers

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