United States

Materials Challenges for Memory

An opportunity for magnetoelectrics in complex oxides: designing heterostructures at the atomic scale

The 15th Joint MMM-INTERMAG Conference (2022 Joint) is sponsored jointly by AIP Publishing and the IEEE Magnetics Society. Members of the international scientific and engineering communities interested in recent developments in fundamental and applied magnetism are invited to attend and contribute to the technical sessions. The technical program will include invited and contributed papers in oral and poster sessions, invited symposia, a plenary session, and an evening session, with about 1500 presentations overall. This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

The 2022 Joint Conference will offer both in-person and prerecorded on-demand content.

For tickets to the event, please register at the following link: https://magnetism.org/register

Please register for the Joint MMM-Intermag conference to join the event.

2022 Joint MMM-INTERMAG

This Conference provides an outstanding opportunity for worldwide participants to meet their colleagues and collaborators and discuss developments in all areas of magnetism research.

technical paper


![](https://assets.underline.io/uploads/markdown_image/1/image/2e10c515564e9ec3287ee4c664011c20.png)

The energy cost of storing and moving data is enormous, and is growing at such a rapid pace that within a few years the power demand may overwhelm some developed nations. Non-volatile memory (NVM) and neuromorphic computing are enabling critical advances in this area, but there are many scientific and technological challenges. This conference will cover the materials challenges of different memory technologies, from the fundamental processes and mechanisms, to industry perspectives on materials specifications and manufacturing.

Smart 2D materials: the new frontier

What does gender got to do with science

Phase change memory devices for electrical and optical in-memory computing

Operando methods for determining lithiation, switching-mechanisms and phase changes in electrochemical processes

Material challenges in ferroelectric memories

Devices and materials for in-memory computing: challenges and opportunities

Industry challenges and outlook for resistive memories

Resistive +PCM

Spin-transfer-torque MRAM

Layered magnetic semiconductors are a key resource for next-generation spintronic logic and memory applications [1]. The recent advances in growing 2D magnetic materials provide ease of thickness control, atomistic mechanical stability, measurable spin-mobility, and a practical approach for spintronic research [2]. Here, we have synthesized 2D chromium sulfide (Cr2S3) using chemical vapor deposition (CVD) on a sapphire substrate and carried out transport measurements under an external magnetic field applied out-of-plane (Figure 1). The microscopy and Raman investigations suggest layered non-van der Waal crystal growth along the c-axis (001) direction. The set of investigations suggest that the 2D-Cr2S3 consists of a layered geometry with magnetic behavior similar to that reported in CrI3 [3] i.e., intra-layer ferromagnetic and inter-layer antiferromagnetic ordering along the stacking (c-axis) direction. The Neil temperature (TN) is noted as ~120 K and small magnetic contributions are evident till room temperature (300 K) as shown in Figures 1d and 2a. 
A four-probe device structure with non-magnetic (Al) electrodes was fabricated using standard semiconductor processing[4] to carry out the transport measurements as shown in Fig. 1c. The voltage across the two inner electrodes was measured in response to a constant current of 10 µA injected into the device. The field-induced magnetoresistance (MRH) was calculated as 〖MR〗_H=(R(H)-R(0))/(R(0)), where R(H) is the resistance measured at an applied magnetic field strength of H in Oe. A large MRH of -25% was observed at 100 K, i.e., near TN. Our study shows the change in MRH magnitude from negative to positive below 20 K as shown in Figure 2a. 
To probe the spin induced magnetoresistance (MR_s=(∆R_s)/R_0 where ∆R_s is the difference in resistance between the positive sweep and the negative sweep of the applied magnetic field, as shown in Figure 2b), the resistance versus a dual sweep (0→5T→0→-5T→0→5T) of the magnetic field (Hext), has been investigated at different temperatures. For TN<T≤300 K, a small negative MRs vs. Hext was noticed. This behavior is characteristic of a disordered magnetic state, typically attributed to quenching of spin disorder upon applying a Hext [5]. On the other hand, distinct resistance states (0 and 1) are observed with Rs ≅ 3 kΩ when cooled down to 10 K at ±5 kOe and 10 µA (power = 0.2 watts). Here, MRs of 13% is observed, which has not been shown before in thin-film Cr2S3 systems. The large resistance hysteresis also matches the magnetization hysteresis (not shown here) and can be attributed to the large (2-5 x 108) spins/m3, which get flipped above the threshold magnetic field.[6]
In summary, we have successfully demonstrated the magneto-resistive effect in CVD-grown 2D Cr2S3 thin film, which makes Cr-based 2D materials novel among 2D materials. Furthermore, these Cr2S3 with ferrimagnetic and narrow bandgap characteristics provide an excellent platform for next-generation spintronic applications.

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An opportunity for magnetoelectrics in complex oxides: designing heterostructures at the atomic scale

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