United States

We propose novel Ferroelectric (FE) Field-Effect Transistor (FeFET) configuration designed to expand the memory window (MW) and enhance retention via two strategies. Our first approach is insertion of charge trap layer (CTL) between gate interlayer (G.IL) and FE layer, providing favorable trapped charge with deep trap levels. The second approach is utilization of high spontaneous polarization and low remanent polarization AFE, which results in enhanced retention by maximizing portion of QN and minimizing depolarization field.

IRPS 2025 Main Conference

The Opportunity of Anti-ferroelectrics in FeFET for the Emerging Non-volatile Memory Applications

non-voltile memory

transistor

ferroelectric

#### Welcome to the 60th IEEE International Reliability Physics Symposium (IRPS)!

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**General Chair Welcome Message**

Welcome to IRPS 2022! When the IRPS Management Committee began making plans for Dallas, we recognized the strong desire by the reliability physics community to return to a face-to-face symposium that we last had in Monterey in 2019. But as time progressed, we recognized that travel restrictions were not being lifted as rapidly as we anticipated. Rather than leave out those of you who could not attend in person, we adopted a hybrid format allowing for both remote attendance and remote presentations. This is a first for IRPS and I am confident it will be a success for all.

With this new hybrid format, the symposium will return to the original five-day format with Tutorials and Year in Review on the first two days. The Technical Program, Keynote Talks, Workshops and Poster session will be held on the following three days. All of these (except Workshops and Posters) will be available via real-time streaming in the US Central Time zone with virtual attendees having Q&A access to the presenters. For those virtual attendees who cannot watch the live presentations, the material will be available on demand to all attendees for a month after the symposium with the ability to communicate with the authors.

In 2020, we were planning on co-hosting the International ESD Workshop (IEW) ESD workshop when the COVID-19 pandemic hit. For 2022, IEW will be seamlessly embedded into the IRPS Program and will sponsor three tutorials, an invited talk, two technical sessions and two evening workshops focused on ESD and latch-up. And we continue our
collaboration with our sister conference, European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF) by hosting their Best Paper and the International Integrated Reliability Workshop (IIRW) by hosting their Best Student Paper.

Our primary objective is to maintain the symposium’s leadership role in the reliability physics of microelectronic devices by attracting leading researchers to present their work and providing attendees the best place to access this information. With all the buzz in the media about whether Moore’s Law has hit its limit, IRPS has been promoting expertise developed in silicon-based reliability over the past sixty years and expanding into new material areas. This year, eight of the technical sessions are devoted to reliability in topics outside of traditional silicon, including wide bandgap GaN/SiC, emerging memory and neuromorphic computing. I hope our ability to draw these communities together will accelerate the cross-fertilization of ideas. 

The Technical Program consists of four keynote speakers, twenty-three invited speakers and eighty-seven oral presentations organized in thirty technical sessions on eighteen reliability topics. Over two evenings, there will be ten Workshops and sixty-six Poster presentations that are designed to allow in person attendees and experts to interact
with one another. With eighteen tutorials covering topics ranging from fundamental transistor and memory reliability all the way up to automotive and complex system-level reliability, this year’s symposium provides an excellent learning opportunity for engineers and scientists new to reliability as well as experienced individuals wanting to explore new
areas. The Year in Review, which serves as a summary of research in the past year, will cover 3D packaging, emerging memory and aging aware circuit designs.

Finally, I would like to express my extreme gratitude to our patrons and exhibitors, whose support makes IRPS possible.
And to all of you, our in person and virtual attendees, for supporting this symposium for sixty years!

**Charles W. Slayman, General Chair** 
**of 2022 IRPS Management Committee**
 
**About IRPS**

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

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IRPS 2022 Main Conference 

IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

technical paper

#### Welcome to the 63rd IEEE International Reliability Physics Symposium (IRPS)! 
**The 2025 IEEE International Reliability Physics Symposium (IRPS) were held in Monterey, California from March 30 to April 3, 2025, presented as an in-person conference, with a virtual component available.** 

[![](https://assets.underline.io/uploads/markdown_image/1/image/9cc005f94b4ba4a81918eb49e0a51057.png)](https://underline.io/events/475/reception)
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**IRPS 2025 General Chair Welcome Message**

On behalf of the Management Committee of the IEEE International Reliability Physics Symposium (IRPS) and the IRPS Board of Directors, it gives me great pleasure to extend a warm welcome to all who are planning to attend the IRPS 2025, scheduled to take place from March 30-April 3, 2025, in Monterey, CA. Over its 63-year history, IRPS has solidified its position as the premiere conference for engineers and scientists to present new and original work in the field of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and other parts of the world, IRPS aims to deepen our understanding of reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS offers diverse opportunities for attendees to enhance their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

The IRPS 2025 technical activities will begin with two days of a total of twenty tutorial sessions covering a broad spectrum of emerging reliability topics including the issues on semiconductor devices, circuit and system reliability. These sessions are devoted to both newcomers as well as experts. Three reliability Year in Review (YIR) talks focusing on Gate-All-Around Devices, 2D Materials, and Advanced Packaging Technology Breakthrough to Drive AI/HPC Innovation will be provided on Monday after the tutorials.
The IRPS 2025 technical program will feature four distinguished keynote talks in the plenary sessions delivered by Dr. Min Cao from TSMC and Dr. Choon Lee from Intel Corporation on Tuesday, Dr. Elif Balkas from Wolfspeed on Wednesday, and Dr. Shankar Venkataraman from Applied Materials, Inc on Thursday. The technical program, organized into three parallel tracks, consists of contributed and 22 invited papers from leaders in industry and academia. Additionally, two invited talks by recipients of paper awards from our sister conferences, European Symposium on Reliability of Electron Device Failure Physics and Analysis (ESREF) 2024 and the International Integrated Reliability Workshop (IIRW) 2024, will be given in the technical program. 

Tuesday evening will host twelve workshops, offering an opportunity for in-depth, face-to-face discussions on emerging reliability challenges, including the three IRPS 2025 focus topics. A poster session will be held in the Monterey Ballroom outside the symposium building on Wednesday evening. Both events are sure to be lively. The IRPS 2025 and the International ESD Workshop (IEW) will be co-hosted with IEW registrants participating in both IRPS and IEW programs.
Finally, I would like to extend my extreme gratitude to our patrons, exhibitors, and all participants for their invaluable support, which makes IRPS successful.
Please enjoy the IRPS 2025!

**Susumu Shuto, General Chair**
 of 2025 IRPS Management Committee


**About IRPS** 
The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

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The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

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Electron-assisted switching in FeFETs: MW dynamics – retention - trapping mechanisms and correlation

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