This study focuses on understanding the fundamental limitations of PMMA exposure to EUV that leads to LER and printing failures. We study the photon-PMMA interactions in EUV using dissolution rate as an indicator of exposure induced change in molecular weights. Consequently, we calculated number of reactions per photon absorbed.

Understanding the fundamental limitations of PMMA resist for EUV exposures based on dissolution rate variations through EUV dose

**Session Chairs:**
 Amit Agrawal and Chi-Chun (Charlie) Liu

Sessions 4C Q&A - Imaging, Modeling and Characterization

technical paper

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

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Amir Hegazy

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Understanding the fundamental limitations of PMMA resist for EUV exposures based on dissolution rate variations through EUV dose

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