Abstract Body: Core-shell semiconductor nanowires (NWs) are an attractive alternative to planar devices for multiple applications, including field-effect transistors, photovoltaic devices, light-emitting diodes, and lasers. The core-shell radial junction structure enables electron- or photo-induced electron-hole pairs (EHPs) to be collected with shorter diffusion lengths due to the small NW diameter. Furthermore, the collection of the EHPs inside the core is free from surface recombination, potentially improving the energy harvesting efficiency. Electron-induced-beam current (EBIC) measurement is a complementary technique in situ in a scanning electron microscope (SEM), collecting excess carriers in a biased diode as a function of beam position and accelerating voltage. In this talk, we will present the analysis of carrier diffusion properties in unprocessed, free standing core-shell GaAs NW diodes. The carrier kinetics in both the n-type core and the p-type shell were determined by analyzing radial EBIC profiles as a function of beam energy. These profiles are highly sensitive to changes in depletion widths and minority carrier diffusion lengths due to geometric effects. Combined with Monte Carlo simulations, they permitted measurement of the n-type core, minority carrier diffusion length, as well as the depletion widths as a function of radial direction. A relatively short minority carrier diffusion length (50 nm) found near {112}B surface facets can be attributed to bulk point defects originating from low-temperature growth (400 °C). Depletion widths were found to be smaller in <112>B directions than in <112>A, likely due to different dopant corporation efficiencies of Te and Zn in the core and the shell, respectively, and to the very thin shell on the {112}B surfaces.

Measurement of Minority Carrier Diffusion Lengths in Core-Shell GaAs NW p-n Junctions

Our group used cellphone CMOS camera module, based on OV5648-BSI image sensor, to image 200keV electron beam in Transmission Electron Microscope and 30keV ion beam in Helium Ion Microscope.

Cellphone CMOS Camera Module for Imaging with Charged Particle Beams.

V: Nanoscale Characterization

technical paper

The Electronic Materials Conference (EMC) is the premier annual forum on the preparation, characterization and use of electronic materials. This year’s event will feature a plenary session, topical sessions, a poster session and more.

EMC is coordinated with the Device Research Conference (DRC), which will be held during the same week, from June 20-23. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchange of information between attendees of both Conferences.

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EMC 2021

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Poster Session - T

poster

The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
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Karen Kavanagh

2

Presentations

Measurement of Minority Carrier Diffusion Lengths in Core-Shell GaAs NW p-n Junctions

Cellphone CMOS Camera Module for Imaging with Charged Particle Beams.

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