It is often thought that cleaving can only be applied to crystalline materials such as silicon and GaAs and that it is an inherently dirty and imprecise process. Dicing by cleaving can be applied to a wide variety of wafer substrates including silicon, sapphire, GaAs, GaN, InP, SiC,  and glass.

Wafer dicing by cleaving: A fast, clean, dry and accurate

INDUSTRIAL HIGHLIGHTS (Commercial Session)

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The International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN), affectionately known as "3-Beams," is the premier gathering of scientists and engineers who are dedicated to electron, ion and photon lithography, imaging, and analysis; atomically precise fabrication; nanofabrication process technologies and related emerging technologies; and their applications in a broad spectrum of fields. In its 64th meeting, researchers from academia, government laboratories, and industry from around the world meet to present and discuss recent and future trends in these technologies.
 
 
 
[![](https://assets.underline.io/uploads/markdown_image/1/image/4bdf4450aa93073cd684b096b403df2e.png)](https://drive.google.com/file/d/1CPaA3-Yf7_maBxJMUJaUORLF3HGO9CIe/view?usp=sharing) [![](https://assets.underline.io/uploads/markdown_image/1/image/cea8a407085dee5422a2c16738ce27ca.png)](https://eipbn.org/abstracts/2021/)

Janet Teshima

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Wafer dicing by cleaving: A fast, clean, dry and accurate

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