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Hussam Amrouch

University of Stuttgart

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in-memory computing

fefet

precolation

fdsoi ferro fet memories

tcam

3

presentations

SHORT BIO

Hussam Amrouch is a Jun.-Professor heading the Semiconductor Test and Reliability (STAR) chair within the University of Stuttgart as well as a Research Group Leader at the Karlsruhe Institute of Technology (KIT), Germany. He received his Ph.D. degree with the highest distinction (Summa cum laude) from KIT in 2015. His main research interests are design for reliability and testing from device physics to systems, machine learning, HW security, and emerging technologies with a special focus on ferroelectric devices. He holds eight HiPEAC Paper Awards. He currently serves as Associate Editor at Integration, the VLSI Journal. He has served in the technical program committees of many major EDA conferences such as DAC, ASP-DAC, ICCAD, etc. and as a reviewer in many top journals like Nature Electronics, T-ED, TCAS-I, TVLSI, TCAD, TC, etc. He has around 160 publications (including 64 journals) in multidisciplinary research areas across the entire computing stack, starting from semiconductor physics to circuit design all the way up to computer-aided design and computer architecture.

Presentations

Cleaved-Gate Ferroelectric FET for Reliable Multi-Level Cell Storage

Navjeet Bagga and 5 other authors

Supressing Channel Percolation in Ferroelectric FET for Reliable Neuromorphic Applications

Kai Ni and 5 other authors

Ferroelectric FET Threshold Voltage Optimization for Reliable In-Memory Computing

Om Prakash and 2 other authors

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