Bidirectional, or four-quadrant switches (FQS) can be designed as back-to-back MOSFETs connected in common-drain (CD) or common-source (CS) topologies. CD-FQS and CS-FQS assembled from discrete 1.2 kV commercially available SiC Power MOSFETs were characterized to obtain capacitance and switching loss values. The CD-FQS exhibited a 1.6x larger turn-off loss compared to the CD-FQS. The CS-FQS exhibited a lower input capacitance, while the CD-FQS exhibited a lower output and reverse transfer capacitance.

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common-Drain Bidirectional Switch Topologies

This talk discusses the dynamic characterization of a 3.3 kV SiC-based reverse voltage blocking switch for three different switch configurations used for the current source inverter (CSI). The static characterization of the devices is done for the latest generation 3.3 kV SiC MOSFET and diode. Based on these results, a preferred current switch is suggested for a medium voltage CSI.

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

**Session Chairs:**
 Aivars Lelis, U. S. Army Research Laboratory, United States
 Anant Agarwal, Massachusetts Institute of Technology, United States

SiC Devices 2: Novel Device Designs

technical paper

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


This event requires a registration to attend, please register [here](https://web.cvent.com/event/536cea3d-4c0d-4d50-8939-529979d80785/summary) to purchase a ticket. 

IEEE WiPDA 2021

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Session Chairs:**
 
 Aivars Lelis, U. S. Army Research Laboratory, United States
 Anant Agarwal, Massachusetts Institute of Technology, United States

Sneha Narasimhan

2

SHORT BIO

Presentations

Comparison of the Capacitances and Switching Losses of 1.2 kV Common-Source and Common-Drain Bidirectional Switch Topologies

Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode for Medium Voltage Current Source Inverter Application

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