Murat has been trained as physicist at the Unité mixte de Physique CNRS/Thales in the group of Prof. A. Fert, and got his PhD at the Paris Institute of Nanosciences of the Sorbonne University with a thesis about magnetic anisotropy in ferromagnetic semiconductor ultrathin films. This work focuses on the control of the magnetic state of semiconductor nanostructures for the development of spintronic devices. After his PhD, he carried out several post-doctoral research projects in different world leading academic research laboratories, i.e. Spintec Lab of the CEA/CNRS, Unité mixte de Physique CNRS/Thales, Cavendish Lab of the University of Cambridge, London Center for Nanotechnology of the University College London before joining NPL as a permanent researcher in 2020. His experience ranges from fundamental physics to more application-driven projects leading to major contributions in fields such as Spin-Orbitronics (i.e. topologically protected magnetic textures, spin-orbit torque (SOT), Dzyaloshinskii-Moriya interaction), spin current injection in nanostructures (i.e. Graphene, Organic, Semiconductors, Superconducting) and MRAM for spintronics devices. His work has led to several high-impact publications in international journals (over 25 publications, i.e. 1 Nature Elect. 2 PRL). He has presented and co-authored several invited and contributed talks and seminars at major international conferences and at EU institutions. One of the main outcomes of his recent work was the first demonstrated proof of concept of writing and reading of a basic cell of ultra-fast (sub-ns) three-terminal perpendicular magnetic memory devices, called SOT-MRAM, published in APL in 2014. This new memory architecture is based on a novel technique of writing cells (using the spin-orbit coupling) capable of solving the intrinsic limitations inherent in MRAM whether written by magnetic field or current (STT-MRAM). This paper has been already cited over 300 times and described as one of the highly cited, rising star paper and most read article.