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Tibor Grasser

TU Wien, Austria

reliability

2d materials

nanoelectronics

sic

reliability engineering

recombination

sic mosfet

high-k gate dielectrics

trap generation

semiconductor device reliability

gsi

2

presentations

SHORT BIO

Prof. Tibor Grasser is an IEEE Fellow and head of the Institute for Microelectronics at TU Wien. He has edited various books, e.g. on the bias temperature instability, hot carrier degradation, and low-frequency noise (all with Springer), is a distinguished lecturer of the IEEE EDS, has been involved in outstanding conferences such as IEDM (currently General Chair), IRPS, SISPAD, ESSDERC, and IIRW, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011). He currently serves as an Associate Editor for IEEE T-ED, following his assignment with Microelectronics Reliability (Elsevier).

Presentations

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs

Tibor Grasser and 11 other authors

Finding Suitable Gate Insulators for Reliable 2D FETs

Theresia Knobloch and 1 other author

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