Self-heating of ultra-scaled system-on-chips is becoming a severe challenge in the electronic industry, which demands a fast on-chip heat-spreading solution. Graphene is predicted to be a potential heat spreader due to its high thermal conductivity. However, low cross-plane thermal conductivity of graphene with metal is a serious concern.  This work, for the first time, proposes and demonstrates a unique orbital overlap engineering solution to enhance the phonon coupling of graphene with a hot spot source. 

Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat Spreaders

We reveal, for the first time, a comprehensive physical insight into high-field electrical breakdown in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs. Electrical, optical, and electro-optic properties of 2D TMD FETs are extensively analyzed in the FETs operated in the non-destructive breakdown regime. Careful investigations reveal that hot carrier electroluminescence (EL) observed in the devices operated at the verge of breakdown can have two distinct origins.

Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs

In this work, for the first time, we report an electric-field coupled molecular dynamics to investigate the impact of electric-field and Joule’s heating at an atomic level in 2D-monolayer MoS2. The results indicate a breakdown vulnerability in zigzag direction at a lower electric-field than in armchair direction under similar conditions. Moreover, it is observed that a high-voltage ramp rate (dV/dt) and Joule’s heating enhance tensile-strain of Mo-S bonds which further lowers breakdown field of MoS2.

P71.TX -Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs

In this work, based on detailed experimentation, we probe the physical mechanism behind the dependence of device performance and reliability on the intrinsic stress in passivation. By engineering the passivation stress to a higher compressive value, we have achieved an improved device performance in terms of 500mV positive Vth shift, enhanced DC breakdown voltage by 105V along with the improved dynamic RON performance. 

On the role of stress engineering of surface passivation in determining the device performance of AlGaN/GaN HEMTs

In this work co-optimization of Silicon controlled rectifier (SCR) ESD characteristics with its low voltage trigger circuit is presented.  The low trigger circuit design approach is discussed and presented. In the process we find that some of the trigger circuits previously reported in literature do not work as desired until co-optimization device engineering techniques are used. The circuit insights are explored using well calibrated electrothermal 3D process and device TCAD mixed mode simulations.

Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCR

Physics of experimentally observed abnormal behavior in STI bounded Silicon-Controlled-Rectifier (SCR) structures is investigated and explained using basic principles and 3D electrothermal TCAD simulations. The SCR device is found to show pulse to pulse instability in the snapback region during 100ns pulse width TLP measurement. The instabilities depended on the load line conditions used in the TLP measurement. The physical insights and device physics has been explored using well calibrated 3D process and device TCAD.

Loadline Dependent Current Filament Dynamics in Nanoscale SCR Devices

In this work, we reveal the presence of unique phonon-assisted hot electron transitions during semi-ON state operation of AlGaN/GaN HEMTs resulting in distinct self-heating behavior of the device. This establishes the importance of considering hot electron-triggered transitions, in addition to conventionally considered self-heating sources, while estimating heating effects in these devices. The phenomena are probed through detailed experimentation involving devices with different field plate lengths, electroluminescence microscopy and spectroscopy, and thermal imaging analysis.

Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs

We report distinct breakdown mechanisms in CVD monolayer MoS2 FET devices for the first time mediated by either voltage or currents in devices. A detailed analysis of the breakdown physics explains the operational effects led shortcomings expected in downscaled devices. Operating short channel TMDs devices would be tricky owing to the dipole moment making it imperative to address the piezoelectric response related drifts in search of reliable performance.

Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETs


Based on DFT and NEGF computation, we explored that Ar and N2 do not
change captured properties of pristine graphene devices. However, they can influence the captured properties of graphene with point defects like carbon vacancy and stone wales defect, which are present inherently in the material. Thus, we can say that Ar and N2 gas
does not provide a completely inert environment for graphene.



Late News: Are Argon and Nitrogen Gases Really Inert to Graphene Devices

The concept of Abutting source/body and drain/anode junction is studied in detail in high voltage LDMOS-SCR with 2D and 3D TCAD simulations. The SCR turn-on and low current filament formation are strongly influenced by the isolation at the anode and cathode side in LDMOS-SCR. While the anode side isolation impacts the filament-induced failures at low currents, the cathode side isolation has a minor impact. The physical insights are given on the SCR turn-on degradation with abutting and its influence on the filament formation and spreading. The obtained understanding helps to build the ESD robust, self-protected LDMOS-SCRs. 

Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices

8B (Packaging & 2.5/3D Assembly)

technical paper

#### Welcome to the 62nd IEEE International Reliability Physics Symposium (IRPS)! 
**The 2024 IEEE International Reliability Physics Symposium (IRPS) was held in Dallas, Texas from April 14 to 18, 2024.** 

[![](https://assets.underline.io/uploads/markdown_image/1/image/9cc005f94b4ba4a81918eb49e0a51057.png)](https://underline.io/events/446/reception)
[![](https://assets.underline.io/uploads/markdown_image/1/image/acae953ba70ae2a57eed7b0250d6dd7d.png)](https://www.irps.org/)
[![](https://assets.underline.io/uploads/markdown_image/1/image/e1806748f2fc69f825e596872a7afdfd.png)](https://drive.google.com/drive/folders/1SmhpLZD9swYxrfP0TYF6327QTIciy3tV?usp=drive_link)
 

**[IRPS 2024 eGuide](https://drive.google.com/file/d/1DHxkWbafodK_D2HlDi7lwRK7KatgBgBD/view?usp=drive_link)** 
Please save the zip file locally and click the "start.pdf" to view the file. 
 
**IRPS 2024 General Chair Welcome Message**

On behalf of the Management Committee of the IEEE International Reliability Physics Symposium (IRPS) and the IRPS Board of Directors, it gives me great pleasure to extend a warm welcome to all who are planning to attend the IRPS 2024, scheduled to take place from April 14-18, 2024, in Dallas, TX. 
Over its 62-year history, IRPS has solidified its position as the premiere conference for engineers and scientists to present new and original work in the field of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and other parts of the world, IRPS aims to deepen our understanding of reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS offers diverse opportunities for attendees to enhance their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

The IRPS 2024 technical activities will begin with two days of a total of twenty tutorial sessions covering a broad spectrum of emerging reliability topics beyond CMOS device, circuit and system reliability. These sessions are devoted to both newcomers as well as experts. Three reliability Year in Review (YIR) talks focusing on neuromorphic computing, dielectric breakdown in leading edge devices, and GaN technology will be provided on Monday after the tutorials.

The IRPS 2024 technical program will feature four distinguished keynote talks in the plenary sessions delivered by Prof. Shinichi Takagi from The University of Tokyo and Dr. Su Jin Ahn from Samsung on Tuesday, Dr. Rajeev Malik from IBM on Wednesday, and Dr. Sameer Pendharkar from Texas Instruments on Thursday. The technical program, organized into three parallel tracks, consists of contributed and seventeen invited papers from leaders in industry and academia. Additionally, two invited talks by recipients of paper awards from our sister conferences, European Symposium on Reliability of Electron Device Failure Physics and Analysis (ESREF) 2023 and the International Integrated Reliability Workshop (IIRW) 2023, will be given in the technical program. 

Tuesday evening will host ten workshops, offering an opportunity for in-depth, face-to-face discussions on emerging reliability challenges, including the three IRPS 2024 focus topics. A poster session will be held in the Austin Ranch outside the symposium building on Wednesday evening. Both events are sure to be lively. The IRPS 2024 and the International ESD Workshop (IEW) will be co-hosted with IEW registrants participating in both IRPS and IEW programs.

The IRPS 2024 will adopt a hybrid conference style, allowing virtual access to live oral presentations hosted by the Underline. Real-time streaming of all technical events (excluding Workshops and Posters) will be available in the US Central Timezone, providing virtual attendees with Q&A opportunities. For those virtual attendees who cannot watch the live presentations, the material will be available on demand to all attendees after the symposium. All authors will be presenting in person.

Finally, I would like to extend my extreme gratitude to our patrons, exhibitors, and all participants for their invaluable support, which makes IRPS successful. 

Please enjoy the IRPS 2024!

Koji Eriguchi, General Chair 
of 2024 IRPS Management Committee
 
**About IRPS** 
The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

To access the site please register [**here**](https://www.irps.org/registration-fees). 

IRPS 2024 Main Conference

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

Poster Session: Transistors

poster

Poster Session: GaN Devices

Poster Session: ESD and Latchup 

6B (GaN Devices)

4A (Transistors)

**This session will take place on June 27, 2022 at 6:00pm ET. 

Poster Session

[![](https://assets.underline.io/uploads/markdown_image/1/image/985c8a40b04e56675221c8549975de3c.png)](https://drive.google.com/file/d/1B70nPIeeeqdG4UU70NlYXuKVOHLRuJEo/view?usp=sharing)

### ** History of DRC**
The Device Research Conference (DRC) began in the pre-transistor era with the 1942 establishment of the Conference on Electron Device Research (CEDR). Following William Shockley’s 1948 CEDR presentation of the transistor device, the Solid-State Device Research Conference (SSDRC) was established, with invitation-only attendance.

In the ensuing decades, many exciting firsts were presented at SSDRC, including the use of impurity diffusion in silicon and germanium, the first practical MOSFET, and the first lattice-matched heterojunction.

In 1969, under the leadership or Herbert Kroemer and Cal Quate, the CEDR and SSDRC merged into DRC. In 1970, attendance was opened to all, and the first DRAM (dynamic random-access memory), room temperature lasers, and first CCD (charge-coupled device) were reported—all in the same 1970 DRC meeting!

1976 saw the first official coordination of tandem meetings between DRC and the Electronic Materials Conference (EMC) to bring together the electronic materials and device communities—a custom which persists to this day. In 1991, DRC began publishing its digest with IEEE; they can all be found [here on IEEE Xplore](https://ieeexplore.ieee.org/xpl/conhome/1000199/all-proceedings). Throughout this period, DRC featured reports of many novel and record-setting devices, including the HEMT (High Electron Mobility Transistor), VCSEL (Vertical Cavity Surface Emitting Laser), HBT (Heterojunction Bipolar Transistor), and nanoscale MOSFETs.

In recent years, DRC has continued to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an [article in the Journal of the Electron Device Society](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486). DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

Today, as we look forward to the next 75+ years of device innovation, DRC continues to lead the way in showcasing top-caliber research, facilitating vibrant discussion and debate and acting as a platform to nurture the next generation of device engineers. We welcome you to join us at the next DRC!

To learn more about DRC's history, please see [Aaron Franklin, Debdeep Jena and Deji Akinwande, "75 Years of the Device Research Conference—A History Worth Repeating," in IEEE Journal of the Electron Devices Society, vol. 6, pp. 116-120, 2018. doi: 10.1109/JEDS.2017.2780778](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486).

### **Topics**
* Biological Devices
* Devices for Extreme Conditions
* Heterogeneously Integrated Devices
* Memory Devices
* Modeling and Simulation of Devices
* Nanoscale and Vacuum Devices
* Optoelectronic and Optical Devices
* Other Emerging Devices
* Power Devices
* Quantum Devices
* RF and Terahertz Devices
* Spintronic and Magnetic Devices
* Thin-film Devices
* Wide-bandgap Devices
 
### **Invited Speakers**
* Patrick Fay, University of Notre Dame
* Susanne Hoffmann-Eifert, Peter Grünberg Institute
* Sanghyeon Kim, Korea Advanced Institute of Science and Technology
* Sriram Krishnamoorthy, University of California, Santa Barbara
* Mario Lanza, King Abdullah University of Science and Technology
* Xiuling Li, The University of Texas at Austin
* Marko Radosavljevic, Intel Corporation
* Siddharth Rajan, The Ohio State University
* Giordano Scappucci, Delft University of Technology
* Fisher Yu, University of Arkansas
* Wenjuan Zhu, University of Illinois at Urbana-Champaign




Registration is required to attend this event. If you have not already done so, please use the link below to register for a ticket to the conference:

https://www.mrs.org/drc-2022/registration

Registration Is Required

DRC 2022

DRC continues to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an article in the Journal of the Electron Device Society. 
DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

6C - EL (ESD and Latchup)

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![](https://assets.underline.io/uploads/markdown_image/1/image/e1ce7df3286ab3a750966a5bf555716e.png)
 


**PROGRAM AT A GLANCE:**
 

![](https://assets.underline.io/uploads/markdown_image/1/image/fd55e96d31b53ac223d4e9b8d0186848.png)

 

**2022 IEEE International Reliability Physics Symposium has gone mobile!**

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IRPS 2022 Main Conference 

IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

Mayank Shrivastava

10

2

SHORT BIO

Presentations

Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat Spreaders

Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETs

P71.TX -Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETs

On the role of stress engineering of surface passivation in determining the device performance of AlGaN/GaN HEMTs

Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCR

Loadline Dependent Current Filament Dynamics in Nanoscale SCR Devices

Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTs

Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETs

Late News: Are Argon and Nitrogen Gases Really Inert to Graphene Devices

Effect of Source & Drain Side Abutting on the Low Current Filamentation in LDMOS-SCR Devices

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