We propose a method to predict V-ramp V BD  using deep learning from OCD -spectrum. Through this, it was confirmed that inter-metal VBD degradation occurring in the LM layers of the COP structure V-NAND can be predicted. Modeling to predict VBD from OCD-Spectrum was performed using deep learning, and a highly accurate prediction model with R2 0.86 was obtained. Using this, V-ramp VBD can be predicted immediately at the process stage without waiting for fab-out.

V-ramp VBD Prediction Method Using OCD-spectrum and Deep-learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk

Due to the demands of AI and HPC, HBM is becoming more high-capacity with multi-die stacks and more complex internal structures. As the number of HBM in SiP also increases, reliability of HBM on SiP has become significant. The main purpose of this study is to compare the structure and stresses of each DUT based on FEA and to analyze the reliability characteristics of HBM by simulating SiP.

Thermo-Mechanical Reliability Characteristics of HBM3

The effect of Off-state stress on a propagation delay (tPD) and a data-valid window (tDV) was characterized. The Vth reduction of PMOSET due to the electron trapping into the nitride in the STI, resulting in the decrease of tDV. The extracted time slope of ∆Vth and ∆tDV showed same ~0.4. It indicates that the degradation was dominated by the off-state stress. The mechanism was investigated by varying the process, and an empirical model was proposed.

Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM using HK/MG Process Technology

This paper proposes a virtual FA (vFA), a new methodology that helps identify failures in field using the telemetry data. The telemetry data refers to the information that is generated when DRAM product is deployed in customer’s data center and information is generated and collected when faults occur in the field. Through this, risk can be accurately predicted and improvement activities can be carried out quickly.

Virtual FA methodology for DRAM: Real-time analysis and prediction method using Telemetry, Field data

With the growth of high performance computing on many industrial sectors that includes mobile/network and data centers/servers, the need for continued technology scaling and advancements on new process technology have paved ways to manufacture advanced semiconductor products. High-k + Metal gate devices and most recently EUV lithography process have become a key enabler for the 7nm technology nodes and beyond [1]. These technologies are being adopted in the advanced DRAM nodes. DRAM memory uses various devices such as MOSFETs (w/ and w/o HK+MG), cell transistor, cell capacitor, and its reliability has also been considered according to the designed purposes. This paper reviews comprehensive reliability on all types of devices used at each circuit in 15nm DRAM memory. The intrinsic reliability of devices in peripheral regions was guaranteed with systematic wafer-level-reliability evaluation up to product level testing for 1000hrs. The reliability of transistors in core regions was verified using design for reliability, various test structures, and up to an accelerated product level aging test. With the suggested degradation modeling of the capacitor in cell regions, the result on 32GB DIMM field tested for over 1 years shows the best in class reliability results and meets 10yrs of lifetime.

Impact of Transistor Reliability on Memories and Memory Periphery Circuitry

10A (Metallization/BEOL Reliability)

technical paper

#### Welcome to the 62nd IEEE International Reliability Physics Symposium (IRPS)! 
**The 2024 IEEE International Reliability Physics Symposium (IRPS) was held in Dallas, Texas from April 14 to 18, 2024.** 

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**[IRPS 2024 eGuide](https://drive.google.com/file/d/1DHxkWbafodK_D2HlDi7lwRK7KatgBgBD/view?usp=drive_link)** 
Please save the zip file locally and click the "start.pdf" to view the file. 
 
**IRPS 2024 General Chair Welcome Message**

On behalf of the Management Committee of the IEEE International Reliability Physics Symposium (IRPS) and the IRPS Board of Directors, it gives me great pleasure to extend a warm welcome to all who are planning to attend the IRPS 2024, scheduled to take place from April 14-18, 2024, in Dallas, TX. 
Over its 62-year history, IRPS has solidified its position as the premiere conference for engineers and scientists to present new and original work in the field of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and other parts of the world, IRPS aims to deepen our understanding of reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS offers diverse opportunities for attendees to enhance their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

The IRPS 2024 technical activities will begin with two days of a total of twenty tutorial sessions covering a broad spectrum of emerging reliability topics beyond CMOS device, circuit and system reliability. These sessions are devoted to both newcomers as well as experts. Three reliability Year in Review (YIR) talks focusing on neuromorphic computing, dielectric breakdown in leading edge devices, and GaN technology will be provided on Monday after the tutorials.

The IRPS 2024 technical program will feature four distinguished keynote talks in the plenary sessions delivered by Prof. Shinichi Takagi from The University of Tokyo and Dr. Su Jin Ahn from Samsung on Tuesday, Dr. Rajeev Malik from IBM on Wednesday, and Dr. Sameer Pendharkar from Texas Instruments on Thursday. The technical program, organized into three parallel tracks, consists of contributed and seventeen invited papers from leaders in industry and academia. Additionally, two invited talks by recipients of paper awards from our sister conferences, European Symposium on Reliability of Electron Device Failure Physics and Analysis (ESREF) 2023 and the International Integrated Reliability Workshop (IIRW) 2023, will be given in the technical program. 

Tuesday evening will host ten workshops, offering an opportunity for in-depth, face-to-face discussions on emerging reliability challenges, including the three IRPS 2024 focus topics. A poster session will be held in the Austin Ranch outside the symposium building on Wednesday evening. Both events are sure to be lively. The IRPS 2024 and the International ESD Workshop (IEW) will be co-hosted with IEW registrants participating in both IRPS and IEW programs.

The IRPS 2024 will adopt a hybrid conference style, allowing virtual access to live oral presentations hosted by the Underline. Real-time streaming of all technical events (excluding Workshops and Posters) will be available in the US Central Timezone, providing virtual attendees with Q&A opportunities. For those virtual attendees who cannot watch the live presentations, the material will be available on demand to all attendees after the symposium. All authors will be presenting in person.

Finally, I would like to extend my extreme gratitude to our patrons, exhibitors, and all participants for their invaluable support, which makes IRPS successful. 

Please enjoy the IRPS 2024!

Koji Eriguchi, General Chair 
of 2024 IRPS Management Committee
 
**About IRPS** 
The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

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IRPS 2024 Main Conference

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

9C (Product Reliability)

Poster Session: Transistors

poster

5C (System Electronics Reliability)

6A -TX (Transistors)

#### Welcome to the 60th IEEE International Reliability Physics Symposium (IRPS)!

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**General Chair Welcome Message**

Welcome to IRPS 2022! When the IRPS Management Committee began making plans for Dallas, we recognized the strong desire by the reliability physics community to return to a face-to-face symposium that we last had in Monterey in 2019. But as time progressed, we recognized that travel restrictions were not being lifted as rapidly as we anticipated. Rather than leave out those of you who could not attend in person, we adopted a hybrid format allowing for both remote attendance and remote presentations. This is a first for IRPS and I am confident it will be a success for all.

With this new hybrid format, the symposium will return to the original five-day format with Tutorials and Year in Review on the first two days. The Technical Program, Keynote Talks, Workshops and Poster session will be held on the following three days. All of these (except Workshops and Posters) will be available via real-time streaming in the US Central Time zone with virtual attendees having Q&A access to the presenters. For those virtual attendees who cannot watch the live presentations, the material will be available on demand to all attendees for a month after the symposium with the ability to communicate with the authors.

In 2020, we were planning on co-hosting the International ESD Workshop (IEW) ESD workshop when the COVID-19 pandemic hit. For 2022, IEW will be seamlessly embedded into the IRPS Program and will sponsor three tutorials, an invited talk, two technical sessions and two evening workshops focused on ESD and latch-up. And we continue our
collaboration with our sister conference, European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF) by hosting their Best Paper and the International Integrated Reliability Workshop (IIRW) by hosting their Best Student Paper.

Our primary objective is to maintain the symposium’s leadership role in the reliability physics of microelectronic devices by attracting leading researchers to present their work and providing attendees the best place to access this information. With all the buzz in the media about whether Moore’s Law has hit its limit, IRPS has been promoting expertise developed in silicon-based reliability over the past sixty years and expanding into new material areas. This year, eight of the technical sessions are devoted to reliability in topics outside of traditional silicon, including wide bandgap GaN/SiC, emerging memory and neuromorphic computing. I hope our ability to draw these communities together will accelerate the cross-fertilization of ideas. 

The Technical Program consists of four keynote speakers, twenty-three invited speakers and eighty-seven oral presentations organized in thirty technical sessions on eighteen reliability topics. Over two evenings, there will be ten Workshops and sixty-six Poster presentations that are designed to allow in person attendees and experts to interact
with one another. With eighteen tutorials covering topics ranging from fundamental transistor and memory reliability all the way up to automotive and complex system-level reliability, this year’s symposium provides an excellent learning opportunity for engineers and scientists new to reliability as well as experienced individuals wanting to explore new
areas. The Year in Review, which serves as a summary of research in the past year, will cover 3D packaging, emerging memory and aging aware circuit designs.

Finally, I would like to express my extreme gratitude to our patrons and exhibitors, whose support makes IRPS possible.
And to all of you, our in person and virtual attendees, for supporting this symposium for sixty years!

**Charles W. Slayman, General Chair** 
**of 2022 IRPS Management Committee**
 
**About IRPS**

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

IRPS 2022 Main Conference 

IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

Sangwoo Pae

5

2

Presentations

V-ramp VBD Prediction Method Using OCD-spectrum and Deep-learning, and Application to Early Detection of V-NAND Low Metal Reliability Risk

Thermo-Mechanical Reliability Characteristics of HBM3

Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM using HK/MG Process Technology

Virtual FA methodology for DRAM: Real-time analysis and prediction method using Telemetry, Field data

Impact of Transistor Reliability on Memories and Memory Periphery Circuitry

Stay up to date with the latest Underline news!

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