Maximilian W. Feil, born 1994 in Munich, Germany, received a B.Sc. and a M.Sc. degree in physics from the Ludwig Maximilian University of Munich (LMU), Germany in 2017 and 2019, respectively. During his Master’s thesis, he worked on optical spectroscopy of cesium lead halide perovskite semiconductor nanoparticles and their superstructures at the Chair for Photonics and Optoelectonics at the Nano-Institute Munich. Since 2019, he is a joint Ph.D. candidate at Infineon Technologies AG, Neubiberg, Germany and at the Institute for Microelectronics of the Vienna University of Technology, Austria. His research encompasses the reliability of silicon carbide MOSFETs with a special focus on charge trapping processes.