Daniele Ielmini
Politecnico di Milano, Italy
emerging memories
rram
crossbar array
in-memory computing
crosspoint array
neural network accelerators
deep neural network accelerators
physical modeling
4
presentations
3
number of views
SHORT BIO
Daniele Ielmini is a Professor of Electronics at Politecnico di Milano, Italy. He received my Ph.D. in 2000 and held visiting positions at Intel Corporation and Stanford University in 2006. His research interests are memory devices (phase change memory, resistive switching memory) and in-memory computing (analogue, digital, neuromorphic). He has published about 350 articles in international journals and conferences, mostly of IEEE. He received the Intel Outstanding Researcher Award in 2013, the ERC Consolidator Grant in 2014, and the IEEE EDS Paul Rappaport Award in 2015. He is an IEEE Fellow for contributions to nonvolatile semiconductor memories.
Presentations
Drift compensation in multilevel PCM for in-memory computing accelerators
Letizia Pistolesi and 11 other authors
Devices and materials for in-memory computing: challenges and opportunities
Daniele Ielmini
Mitigating read-program variation and IR drop by circuit architecture in RRAM-based neural network accelerators
Nicola Lepri and 2 other authors
Statistical model of program/verify algorithms in resistive-switching memories for in-memory neural network accelerators
Artem Glukhov and 8 other authors