Energy-efficient spintronic memories and oscillators require a large spin-orbit torque (SOT) and low effective damping for exciting magnetic precession. Conventional
SOT-driven bilayers, consisting of a heavy metal and an ultrathin ferromagnet (e.g., ~1 nm), suffer from high damping due to interfacial spin pumping and scattering. Recently, SOTs have
been reported in thicker (~10 nm) single-layer ferromagnetic films with vertical compositional gradients [1-3]. We hypothesize that thick vertically graded ferromagnets can also enable
low damping, potentially coexisting with substantial SOTs. Here, we examine the impact of intentional compositional gradients on damping and SOTs, specifically in graded films
consisting of two ferromagnetic elements: Fe with low intrinsic damping [4] and Ni with sizable spin-orbit coupling [5]. We grew 10-nm-thick graded and homogeneous Fe-Ni films by continuously tuning the sputtering powers on Fe and Ni sources [Fig. 1(a-c)]. The targeted vertical compositional and
magnetic gradients are confirmed and quantified by polarized neutron reflectometry. In-plane broadband ferromagnetic resonance (FMR) [Fig. 1(d)] points to low ef ective damping
parameters of ≈0.0045 for the graded films, comparable to ≈0.0038 for the homogenous film. Out-of-plane FMR [Fig. 1(e)] reveals intrinsic damping parameters of ≈0.0032 for both the
graded and homogenous Fe-Ni films. These FMR results indicate that low damping is maintained despite the steep, intentional vertical inhomogeneity. From spin-torque FMR
measurements on a graded sample, we detect a modest (at most ≈2%) linear change in the FMR linewidth with a DC current density of 1×1011 A/m2
[Fig. 2], suggesting a small dampinglike SOT. Our findings constitute a step toward understanding and engineering low-damping single-layer ferromagnetic films for SOT-driven applications. 
**References** [1] Liu, L., Yu, J., Gonzalez-Hernandez, R., Phys Rev. B., Vol. 101, p. 220402 (2020) 
[2] Tang, M., Shen, K., Xu, S., Advanced Materials, Vol. 32, p. 2002607 (2020) 
[3] Zhu, L., Ralph, D. C., & Buhrman, R. A. Advanced Functional Materials p. 2103898 (2021) 
[4] Wu, S., Smith, D.A., Nakarmi, P., et. al., Phys Rev. B., Vol, 105, p. 174408 (2022) 
[5] Du, C., Wang, H., Yang, F., et. al., Phys Rev. B., Vol. 90, p. 140407 (2014) 

![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/5c298ab0a08d5d203c251d6f15a04437.png) 
Fig. 1: (a,b) Schematics of (a) FeNi graded, (b) NiFe graded, and (c) FeNi homogeneous films. (d,e) Frequency dependence of (d) in-plane and (e) out-of-plane FMR linewidth for homogeneous and graded Fe-Ni films. 
![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/4fc66015f32a2a8a2709c1a39348e0fb.png) 
Fig. 2: DC bias current dependence of spin-torque FMR linewidth for 10-μm-wide graded NiFe strip at 7 GHz, magnetized at in-plane angle (a) 50o and (b) 230o

Single Layer Vertically Graded Fe

The unidirectional spin Hall magnetoresistance (USMR) is initially discovered in ferromagnetic (FM) and normal metal (NM) structures[1] and magnetic semiconductor structures[2]. It is a phenomenon observed in bilayer structures and is related to interfacial spin generation and scattering processes at the interface. The similar unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is observed in FM-topological insulator (TI) bilayers being much larger than that in FM-NM bilayers in bilayer structures[3]. They are of particular interest due to its potential of 180-degree sensitive electrical readout of magnetization in bilayer structures for spin-orbit torque switching devices.
Here, we report large unidirectional spin Hall and Rashba−Edelstein magnetoresistance in a new material family - magnetic insulator (MI)/TI Y3Fe5O12 (YIG)/Bi2Se3 bilayers. Such heterostructures exhibit a USRMR that is about an order of magnitude larger than the highest values reported in all-metal Ta/Co bilayers[1]. The polarized neutron reflectometry (PNR) reveals a unique temperature-dependent magnetic intermediary layer at the MI-substrate interface and a proximity layer at the MI-TI interface. These PNR findings echo the magnetoresistance results in a comprehensive physics picture. Finally, we demonstrate a prototype memory device based on a MI/TI bilayer, using USRMR for electrical read out of current-induced magnetization switching aided by a small Oersted field[4].
 
**References** [1] C. O. Avci, K. Garello, A. Ghosh et al., Nat. Phys., vol. 11, no. 7, p. 570–575 (2015)
[2] K. Olejník, V. Novák, J. Wunderlich et al., Phys. Rev. B - Condens. Matter Mater. Phys., vol. 91, no. 18, p. 180402 (2015)
[3] Y. Lv et al., Nat. Commun., vol. 9, no. 1, p. 111 (2018)
[4] Y. Lv et al., Appl. Phys. Rev., vol. 9, no. 1, p. 011406, (2022) 
![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/1d133d85eb2273c2dd6a3ef286e8d822.png)

Large unidirectional spin Hall and Rashba−Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Three-dimensional (3D) magnetic assemblies can accommodate unique topological features and exotic spin textures, along with embedded magnetic frustrations [1]. Recently, we have realized interconnected cobalt nanowire networks using multiple angle ion-tracking and electrodeposition; such networks exhibit new magnetization reversal behaviors, offering an interesting platform for 3D information storage [2]. Here we report magnetoresistance (MR) studies of such interconnected networks, to explore how the magnetic configurations can be correlated with spin transport. When a sizable collection of connected nanowires is measured, typical anisotropic magnetoresistance behavior with sharp minima near the coercive fields is found, suggesting that the current is largely bypassing the high resistance intersections. However, when only a few interconnected nanowires are measured, the MR curve exhibits multiple kinks and local minima, indicative of domain wall pinning by the intersections (Fig. 1). More interestingly, during the positive to negative field sweep, a significant MR minimum is observed at positive field, which is the largest among all the MR minima. These features are not seen in parallel nanowires and are a direct consequence of the intersections. Micromagnetic simulations using an equivalent resistor model based on two intersecting nanowires reproduces the experimental observations, including the multiple kinks and a large MR minimum in positive field. Furthermore, small angle neutron scattering has been used to characterize magnetic correlations in the networks under different applied magnetic field configurations. These results show that the intersections in the networks play an important role in pinning / depinning of domain walls, which may be utilized for 3D magnetic memory and memristive devices. Work supported by the SRC/NIST nCORE SMART center and NSF.

![](https://assets.underline.io/uploads/markdown_image/1/image/33fe181bcbcc9e0f263230fd717c8566.jpg)

Figure 1: Magnetoresistance of a few interconnected Co nanowires showing multiple kinks, indicative of domain wall pinning and depinning during magnetization reversal.

Intersection-Mediated Magnetoresistance in 3D Nanowire Networks

Due to the long spin diffusion length and the high mobility, monolayer graphene is an intriguing material element for spintronic applications [1]. For example, if a monolayer graphene can be magnetized, Dirac electrons and holes will carry opposite spins, leading to a good spin filter or a convenient generator of pure spin currents. However, a prestine monolayer graphene does not have net magnetization. Previous experiments have demonstrated that when a monolayer graphene is transferred to the surface of a magnet, the p orbitals on the carbon atoms can overlap with the magnetic atoms in the adjacent layer, leading to an induced magnetization in the graphene layer [2]. This is known as the proximity effect, and has been reported in different types of ferromagnetic heterostructures. Compared to ferromagnets, antiferromagents are better candidates to magnetize graphene. Due to the zero net magnetization, an antiferromagnet does not respond to external magnetic noise, and therefore devices using antiferromagnetic heterostructures have good scalbility and stability. Also, antiferromagents can switch almost three orders of magnitude faster than conventional ferromagnets, which may lead to high-speed information processing. Here, we show that a monolayer graphene can indeed be magnetized through the proximity effect provided by a thin film of hexagonal chromium selenide (Fig. 1), a semiconducting antiferromagnet [3]. The induced spin splitting energy is experimentally measured to be 134meV at 2K. Such exchange splitting is experimentally confirmed by the shift of quantum oscillations in the graphene layer. The magnitude of the splitting energy is obtained by its modulation through field cooling, with the exchange splitting energy increasing driven by positive cooling fields and decreasing by negative cooling fields (Fig. 2). The magnitude of the exchange coupling and the Laudau-level indices are confirmed by a machine-learning search for the best fit in a large parameter space. Such spin splitting is also supported by polarized neutron reflectometry and magneto-optic Kerr measurements. Acknowledgements: The transport measurement and theoretical modelling in this work were supported by Spins and Heat in Nanoscale Electronic Systems (SHINES), an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under award #SC0012670. We are also grateful for support from the National Science Foundation (NSF) (DMR-1411085 and DMR-1810163) and the ARO programme (contract no. W911NF-15-1-10561). Research was performed in part at the NIST Center for Nanoscale Science and Technology. This work used the Extreme Science and Engineering Discovery Environment (XSEDE), which is supported by NSF grant no. OCI-1053575. Specifically, it used the Bridges system (supported by NSF award no.ACI-1445606) at the Pittsburgh Supercomputing Center (PSC). Certain commercial equipment, instruments or materials are identified in this paper to foster understanding. Such identification does not imply recommendation or endorsement by the National Institute of Standards and Technology, nor does it imply that the materials or equipment identified are necessarily the best available for the purpose.

![](https://assets.underline.io/uploads/markdown_image/1/image/17681d6778d9ccff54b5964943012fc1.jpg)

Fig. 1. The schematic of the graphene/CrSe heterostructure. Hexagonal CrSe has a layered AFM structure. Each layer contains a non-colinear spin texture with a non-zero magnetization along z. Adjacent layers cancel the moments of each other, resulting in a net antiferromagnet.

![](https://assets.underline.io/uploads/markdown_image/1/image/d699ad42c2ba992a04094c15c97d5021.jpg)

Fig. 2. Quantum oscillations are shifted by field cooling in the heterostructure. The dips corresponding to each Landau level are denoted by dashed lines.

Large Exchange Splitting in Monolayer Graphene Magnetized by an Antiferromagnet

Magnetic skyrmions present interesting and unique pseudo-particle behaviors which arises from their topological protection [1-2]. Key among these behaviors is their resonant dynamics, under microwave fields, which include both breathing and gyration modes. Due to their small size, and magnetic-only contrast of skyrmions, coupled with high frequency dynamics – in the GHz regime – it is challenging to do in-situ measurements on these excitations. This work reports the use of small angle neutron scattering (SANS) to capture the dynamics of hybrid skyrmions stabilized in Fe/Gd multilayers by means of dipolar interactions. Using perpendicular DC fields and in-plane RF fields, we explored the gyration modes of hybrid skyrmions away, below, at, and above resonance [Fig.1(a-d)]. We find the dynamic modes of hybrid skyrmions contribute to the SANS signal in two ways: first, the scattered neutrons incur additional transverse momentum as a result of scattering from a moving source, and second, the gyration skyrmions disrupt ordering of the lattice giving rise to enhancement form-factor scattering. Ferromagnetic resonance measurements confirm the RF and DC field conditions for these gyration modes. Our results offer new insights into the nanoscale dynamics of magnetic skyrmions and present a unique use of SANS to probe magnetization dynamics.

![](https://assets.underline.io/uploads/markdown_image/1/image/a7eefda0d3ae85f8c787ee1cd94ec130.jpg)

Fig.1 2D SANS pattern of magnetic skyrmions under different magnetic fields and excitation frequencies: (a) Static state (H=0, RF=0), (b) below-resonance state (H=150 mT, RF=1.2 GHz), (c) at-resonance state (H=150 mT, RF=1.3 GHz) and (d) above-resonance state (H=150 mT, RF=1.4 GHz). All 2D images are plotted with the same intensity scale.

In-situ GHz Dynamics of Skyrmions Probed with SANS

Complex oxide thin films have highly tunable magnetic properties, not only due to the correlated degrees of freedom within these materials, but also due to the constraints imposed by choice of substrate material. For example, the magnetic properties of manganite materials depend heavily on the bond lengths and angles, resulting in a dead layer at the substrate/film interface [1,2,3]. Recently, techniques have been developed to separate oxide thin films from the substrate after growth, decoupling structural and chemical degrees of freedom at the interface [4]. This technique therefore may allow us to reduce dead layers at the interface of manganite thin films. Thin films of (001)-oriented LaMnO3+δ (LMO) were grown using pulsed laser deposition on a water-soluble Sr3Al2O6 (SAO) film on top of a (001) SrTiO3 substrate. After coating the film with a 1μm thick support layer of PMMA polymer, the SAO was dissolved in water, allowing the film to be separated from the substrate; this freestanding film could then be transferred to a different substrate, in this case, oxidized Si or LSAT. X-ray diffraction measurements show that freestanding films remain highly crystalline and oriented, but are no longer strained to the substrate. Magnetometry measurements indicate very similar TC, magnetic anisotropy, and saturation magnetization for both freestanding and epitaxial films, and cannot discern any difference in dead layer. Therefore, polarized neutron reflectometry (PNR) was performed at multiple temperatures to understand the depth profile of both the nuclear and magnetic structure of these freestanding films. As shown in Fig. 1, the film transferred onto the LSAT substrate is very smooth and has an expected structure. Between the substrate and freestanding film is a region with slightly lower nuclear scattering length density (SLD); from STEM and EELS, we find that this region is caused by intermixing with or residue from the water-soluble layer. In contrast, the film transferred onto silicon has a much more complicated structure, as shown in Fig. 2. The PNR data can only be explained with a long-range corrugation or rumpling of the film when placed on the Si substrate, with water incorporated into the interfacial region. After chemical removal of the PMMA support, this corrugation remains. Regardless of the substrate material, the magnetic profile within the freestanding manganite film is uniform, and there is no evidence of the magnetically dead layers at the substrate/film interface seen in epitaxial films. Thus, although choice of substrate can still affect freestanding films through chemical effects – which may have implications for the integration of these freestanding films with silicon-based devices – removing the structural constraints imposed by epitaxial growth is a promising avenue to reduce the dead layer in manganites.

**References:**

[1] Zhai, X., Cheng, L., Liu, Y., et al. Nat. Commun. 5, 4283 (2014). [2] Moon, E. J., Balachandran, P. V., et al. Nano Lett. 14, 2509-2514 (2014). [3] Liao, Z., Zhang, J. Appl. Sci. 9, 144 (2019). [4] Lu, D., Baek, D. J., Hong, S. S., et al. Nat. Mater. 15, 1255–1260 (2016).

**Images:**

![](https://assets.underline.io/uploads/markdown_image/1/image/bd954455d1393d7baa1acecb08ea8393.jpg)
(a) PNR data and (b) spin asymmetry of a 20 nm LMO freestanding film transferred onto an LSAT substrate, taken at 50K in an in-plane magnetic field of 3T. (c) The nuclear and magnetic depth-profile used to generate the best-fit model.

![](https://assets.underline.io/uploads/markdown_image/1/image/f23f5b70115419a383466b864d2fe667.jpg)
(a) PNR data and (b) spin asymmetry of a 40 nm LMO freestanding film transferred onto a Si/SiOx substrate, taken at 7K in an in-plane magnetic field of 1.5T. (c) The nuclear and magnetic depth-profile used to generate the best-fit model.

 Interfacial Corrugation and Magnetism of Freestanding LaMnO3+δ Thin Films

Electrical manipulation of the magnetization and exchange bias in antiferromagnet (AFM)/ferromagnet (FM) heterostructures[1,2] is expected to be of use in several high performance spintronic devices. An efficient method for electrical switching of the FM magnetization is to use the spin–orbit torque (SOT) generated from a heavy metal layer in AFM/FM/heavy metal structures[3]. The in-plane exchange field generated at the AFM/FM interface enables field-free switching of the perpendicular magnetization[4,5]. However, manipulation of the exchange bias is usually achieved by field cooling, which requires an external magnetic field and high temperature, hindering its application in practical devices. It has been demonstrated that the exchange bias field at the AFM/FM interface can be switched by the SOT generated in the Pt layer in a Pt/Co/IrMn structure, passing through the thin Co layer[2]. Strong SOTs can also be generated in certain AFM thin films (such as IrMn and PtMn) due to their giant spin Hall angle[6,7], allowing simpler spintronic devices to be created. Here, we report the current-induced switching of exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnet IrMn layer[8]. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. Figure 1a illustrates four states for the CoFeB magnetization and the interfacial IrMn spins. By applying a negative pulse current in the presence of an in-plane magnetic field ofμ0Hx = 100 mT, switching of the magnetization from up to down can be realized, as shown in Fig. 1c. Interestingly, the exchange bias field before the magnetization switching is -1.3 mT (Fig. 1b), but it changes to 1.6 mT after the magnetization switching (Fig. 1d), indicating reversal of the exchange bias field from negative to positive driven by the SOT current. Next, we find that when a relatively small current (e.g. 7 mA) is applied to a sample with DP state, only the magnetization switches, while the exchange bias field remains unchanged, leading to a transition from DP to UAP state, as shown in Fig. 1e. Then, when a pulse current with amplitude of 8 mA is applied to the samples with UAP state, the exchange bias field is reversed alone, but the magnetization remains unswitched, resulting in a transition from UAP to UP state (see Fig. 1f-h). X-ray magnetic circular dichroism (XMCD), polarized neutron reflectometry (PNR) measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena. Figure 2 illustrates the micromagnetic simulation results of exchange bias and its manipulation by SOT. Figure 2a shows the schematic of the AFM/FM exchange bias system. Initially, a positive exchange bias field is obtained, as shown in Fig. 2b. When we apply a SOT current of JSOT = 90 MA●cm-2, the FM magnetization can be switched while the exchange bias field is still positive, as indicated in Fig. 2c. Moreover, Fig. 2c also shows that a large SOT current ( JSOT= 270 MA●cm-2) can be used to reverse the exchange bias field. Figure 2d and 2e are snapshots of the z component of FM magnetization at selected times upon the application of different SOT currents. Through sweeping the SOT current density, it is clearly shown in Fig. 2f that the critical switching current density for the exchange bias is larger than that for the magnetization. Furthermore, to confirm the different critical current densities for magnetization and exchange bias field, temperature- and thickness-dependent switching are explored. In summary, we have reported current-induced exchange bias switching via the SOT originating from the AFM layer in an IrMn/CoFeB bilayer. The independent switching of magnetization and exchange bias field in a repeatable manner is demonstrated by manipulating the current direction and amplitude in the presence of an in-plane magnetic field. Experimental results from PNR and XMCD indicate a small net magnetization exists at the IrMn interface, comprised primarily of rotatable uncompensated Mn spins and a much smaller fraction (&lt;10%) of pinned spins. Micromagnetic simulations and temperature-dependent measurements show that the critical current density to switch the interfacial pinned spins, and hence the exchange bias field, is larger than that of magnetization reversal, and this difference allows the FM layer and exchange bias to be individually manipulated by SOT currents, rather than via perpendicular magnetic fields.

**References:**

[1] D.R. Xiong, S.Z. Peng and W.S. Zhao, Appl. Phys. Lett. Vol. 117, no. 21, pp. 212401 (2020). [2] P.H. Lin, B.Y. Yang and C.H. Lai, Nat. Mater. Vol. 18, pp. 335–341 (2019). [3] S.Z. Peng, D.Q. Zhu and W.S. Zhao, Adv. Electron. Mater. Vol. 5, pp.1900134 (2019). [4] Y.W. Oh, S.C. Baek and B.G. Park, Nat. Nanotechnol, Vol. 11, pp.878–884 (2016). [5] S.Z. Peng, J.Q. Lu and W.S. Zhao, IEEE Int. Electron Devices Meet. (IEDM), p. 28.6.1-28.6.4 (2019). [6] D. Wu, G.Q. Yu and K.L. Wang, Appl. Phys. Lett., Vol. 109, pp.222401 (2016). [7] Y.X. Ou, S.J. Shi and R.A. Buhrman, Phys. Rev. B, Vol. 93, pp. 220405(R) (2016). [8] S.Z. Peng, D.Q. Zhu and W.S. Zhao, Nat. Electron. Vol. 3, pp. 757–764 (2020).

**Images:**

![](https://assets.underline.io/uploads/markdown_image/1/image/80a05ae9b4e976a9e973c73b4ec889d9.jpg)
Fig.1 Exchange bias and magnetization switching driven by current-induced SOT. a, Schematic configurations of four states for the CoFeB magnetization and interfacial IrMn spins and transitions among them. b-h, Concurrent switching of the magnetization and exchange bias field (b-d), independent switching of magnetization (e) and independent switching of exchange bias field (f-h) by a pulse current in the presence of an in-plane magnetic field.

![](https://assets.underline.io/uploads/markdown_image/1/image/2832a31a51b3b77bf9dccc9d8b4fd9ee.jpg)
Fig.2 Micromagnetic simulation results of exchange bias and its manipulation by SOT. a, Schematic of the AFM/FM exchange bias system. b,c, Hysteresis loops (b) before and (c) after application of SOT currents. d,e, Snapshots of the z component of the FM magnetization configuration (mz) at selected times. f, Switching of the exchange bias and magnetization under different SOT current densities.

 Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque

A gap opening in the surface state bands via breaking of TRS in topological insulators (TI) is needed for realization of dissipationless Quantum Anomalous Hall Effect (QAH) and other fascinating topological properties [1-5]. Here, we report formation of an antiferromagnetic (AFM) phase at the interface of sputter grown crystalline textured TI, Bi2Te3 when coupled with ferromagnetic metal (FM), Ni80Fe20 (Permalloy, Py). We grew samples of 40 nm c-axis oriented Bi2Te3 at 250 degC followed by 20 nm of Py at room temperature. Diffusion of Ni from Py and formation of distinct Ni-doped Bi2Te3 interfacial phase was observed. Zero Field Cooled (ZFC) magnetic hysteresis loop measurements at low temperatures showed a large spontaneous exchange bias of ~80 Oe at 6 K which suggests presence of strong FM/AFM coupling in the samples (Figure. 1). Location of the antiferromagnetic phase at Ni intercalated Bi2Te3 interfacial layer was identified using Polarized Neutron Reflectometry (PNR) (Figure 2) at 7 K. The magnetic scattering length density (MSLD) has a value of ~0.26 at 1T saturation field but is ~0 at a low field of 50 Oe when the magnetic moments in the interfacial layer are antiferromagnetically ordered. The large exchange bias in the Ni intercalated Bi2Te3 interfacial layer clearly suggests a large exchange energy which is characteristic of super-exchange mediated coupling of moments in Ni, Bi and Te based Van der Waals (VdW) MTI compounds [8]. This large exchange bias raises the possibility of formation of topologically nontrivial magnetic material at the interface. The observation of magnetic phase at the interface layer further raises the possibility of QAH state and paves the way for further exploration of TI/FM based heterostructures and applications for energy efficient spintronic devices which are compatible with industrial CMOS processes.

![](https://assets.underline.io/uploads/markdown_image/1/image/8270706ca20995363a54b4e33edb73db.jpg)

ZFC hysteresis loop measured at 300 K and 6 K. At 6 K a large exchange bias of ~80 Oe emerges because of coupling of AFM interface layer with FM Py layer.

![](https://assets.underline.io/uploads/markdown_image/1/image/683d74f2557c122585bafe57a4a52001.jpg)

PNR measurement at 7 K showing finite moments at 1 T saturation and AFM ordering at the Ni intercalated interface at 50 Oe. Inset: STEM-HAADF image with clear indication of the AFM Ni-intercalated Bi2Te3 layer.

Antiferromagnetic Phase in Sputtered Topological Insulator/Ferromagnetic Heterostructure Interface

Advanced Static and Dynamic Spin Depth Profiling

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Presentations

Single Layer Vertically Graded Fe

Large unidirectional spin Hall and Rashba−Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures

Intersection-Mediated Magnetoresistance in 3D Nanowire Networks

Large Exchange Splitting in Monolayer Graphene Magnetized by an Antiferromagnet

In-situ GHz Dynamics of Skyrmions Probed with SANS

Interfacial Corrugation and Magnetism of Freestanding LaMnO3+δ Thin Films

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque

Antiferromagnetic Phase in Sputtered Topological Insulator/Ferromagnetic Heterostructure Interface

Advanced Static and Dynamic Spin Depth Profiling

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