During CDM ESD events, MOSFET gate oxides may be exposed to high voltage stress for a few hundred picoseconds, and the gate oxide breakdown voltage is important for ESD designers. This work presents an on-chip pulse generator capable of producing clean pulses with amplitude up to 6 V and pulse width as short as 200 ps. The pulse generator is used for an experimental investigation of gate oxide breakdown voltage on a sub‑ns timescale.

On-Chip Single-Shot Pulse Generator for TDDB Characterization on a Sub-nanosecond Timescale

8C (ESD and Latchup)

technical paper

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The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

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On-Chip Single-Shot Pulse Generator for TDDB Characterization on a Sub-nanosecond Timescale

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