Long Read-After-Write-Delay (RAWD) is one of the Show stoppers (S.S) in ferroelectric based VNAND (Fe-VNAND) because of limited read speed. We investigated the RAWD time (tRAWD) in MFIS as well as Laminate-MFIS  (LaMFIS). In LaMFIS, Vt tends to increase slightly at low voltage during Incremental Step Positive Pulse (ISPP) operation. This is caused by the accumulation of trapped electrons at the inserted layer. The novel ISPP scheme removed these electrons and therefore improved device performance.

A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND

We investigate a drain current degradation in Fe-FET. This phenomenon is due to trapping/de-trapping charge rather than charged remnant polarization of ferroelectric layer. That is explained as a de-trapped compensation charge from the channel-side interfacial layer, and a trapped charge from substrate silicon channel. This modeling is confirmed by experimental and simulation results. Based on the thorough investigation, we propose pulse conditions for proper read operation and recommend physical parameters of channel IL in Fe-FET.

Drain Current Degradation Induced by Charge Trapping/De-trapping in Fe-FET

9B (Memory Reliability)

technical paper

#### Welcome to the 62nd IEEE International Reliability Physics Symposium (IRPS)! 
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**IRPS 2024 General Chair Welcome Message**

On behalf of the Management Committee of the IEEE International Reliability Physics Symposium (IRPS) and the IRPS Board of Directors, it gives me great pleasure to extend a warm welcome to all who are planning to attend the IRPS 2024, scheduled to take place from April 14-18, 2024, in Dallas, TX. 
Over its 62-year history, IRPS has solidified its position as the premiere conference for engineers and scientists to present new and original work in the field of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and other parts of the world, IRPS aims to deepen our understanding of reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS offers diverse opportunities for attendees to enhance their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

The IRPS 2024 technical activities will begin with two days of a total of twenty tutorial sessions covering a broad spectrum of emerging reliability topics beyond CMOS device, circuit and system reliability. These sessions are devoted to both newcomers as well as experts. Three reliability Year in Review (YIR) talks focusing on neuromorphic computing, dielectric breakdown in leading edge devices, and GaN technology will be provided on Monday after the tutorials.

The IRPS 2024 technical program will feature four distinguished keynote talks in the plenary sessions delivered by Prof. Shinichi Takagi from The University of Tokyo and Dr. Su Jin Ahn from Samsung on Tuesday, Dr. Rajeev Malik from IBM on Wednesday, and Dr. Sameer Pendharkar from Texas Instruments on Thursday. The technical program, organized into three parallel tracks, consists of contributed and seventeen invited papers from leaders in industry and academia. Additionally, two invited talks by recipients of paper awards from our sister conferences, European Symposium on Reliability of Electron Device Failure Physics and Analysis (ESREF) 2023 and the International Integrated Reliability Workshop (IIRW) 2023, will be given in the technical program. 

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of 2024 IRPS Management Committee
 
**About IRPS** 
The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

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IRPS 2024 Main Conference

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

Wanki Kim

2

Presentations

A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNAND

Drain Current Degradation Induced by Charge Trapping/De-trapping in Fe-FET

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