In the semiconductor industry, enhancing the hardness of SiO x is an important issue. Previous studies have focused on the oxygen content dependence of hardness only in a limited region close to x = 2, where the hardness generally increases with increasing x. However, our exploration of SiO x revealed a different path to increase hardness: within the subregion 0 &lt; x &lt; 1.2, reducing the oxygen content led to an increase in SiO x hardness.

The Enhancement Mechanisms of SiOx Hardness via Manipulation of Oxygen Content

10B (Failure Analysis)

technical paper

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The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

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