This paper introduces a novel three-dimensional approach to model threshold voltage variation (ΔVth) during TDDB stress of SiC trench MOSFETs in a wide temperature range T=273…523 K and studies the processes of ΔVth recovery at room temperature.

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs during TDDB Stress

Poster Session: SiC Devices

poster

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The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

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Threshold Voltage Drift and Recovery of SiC Trench MOSFETs during TDDB Stress

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