In this work, we report the first comprehensive TDDB study on ultra-thin HfO2-based ferroelectric capacitors under bipolar stress conditions. Bipolar cycling of FE-HZO is shown to exhibit similar TDDB acceleration trends to that of traditional dielectrics. The temperature acceleration of TDDB shows a linear dependence on the stress field similar to SiO2. The field acceleration of TDDB in FE-HZO, while exhibiting functionally similar temperature dependence to that of SiO2, demonstrates considerably greater sensitivity to temperature.

Comprehensive time dependent dielectric breakdown (TDDB) characterization of ferroelectric capacitors under bipolar stress conditions

A modeling framework to describe NBTI characteristics in GAA is proposed. Three dimensional simulations of Si-H bond de-passivation and re-passivation, hydrogen species generation and transport, interface and bulk trap generation, and threshold voltage shift are examined. The extracted voltage-acceleration factor and activation energy are in close match with GAA experimental data.  The impact of nanosheet thickness and SiGe channel on GAA NBTI characteristics are investigated and the model projections align very well with published reports.

Modeling of Negative Bias Temperature Instability (NBTI) for Gate-all-around (GAA) Stacked Nanosheet Technology

7A (Emerging Memory Cont'd)

technical paper

#### Welcome to the 62nd IEEE International Reliability Physics Symposium (IRPS)! 
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**IRPS 2024 General Chair Welcome Message**

On behalf of the Management Committee of the IEEE International Reliability Physics Symposium (IRPS) and the IRPS Board of Directors, it gives me great pleasure to extend a warm welcome to all who are planning to attend the IRPS 2024, scheduled to take place from April 14-18, 2024, in Dallas, TX. 
Over its 62-year history, IRPS has solidified its position as the premiere conference for engineers and scientists to present new and original work in the field of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and other parts of the world, IRPS aims to deepen our understanding of reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS offers diverse opportunities for attendees to enhance their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

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**About IRPS** 
The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

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IRPS 2024 Main Conference

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

Souvik Mahapatra

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Comprehensive time dependent dielectric breakdown (TDDB) characterization of ferroelectric capacitors under bipolar stress conditions

Modeling of Negative Bias Temperature Instability (NBTI) for Gate-all-around (GAA) Stacked Nanosheet Technology

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